DATA SHEET UF1A~UF1M SEMICONDUCTOR SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts ULTRA FAST RECTIFIERS FORWARD CURRENT - 1.0 Ampere FEATURES • Glass passivated chip SMB/DO-214AA • Ultra fast switching for high efficiency Unit:inch(mm) • For surface mounted applications • Low forward voltage drop and high current capability .083(2.11) .075(1.91) • Low reverse leakage current .155(3.94) .130(3.30) • Plastic material has UL flammability classification 94V-0 • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS environment .185(4.70) .160(4.06) substance directive request .012(.305) .006(.152) MECHANICAL DATA • Case : Molded plastic • Polarity : Indicated by cathode band .096(2.44) .083(2.13) • Weight : 0.003 ounces, 0.093 grams .012(.31) .006(.15) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .050(1.27) .030(0.76) .008(.203) .002(.051) Ratings at 25°C ambient temperature unless otherwise specified. .220(5.59) .200(5.08) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M Maximum Recurrent Peak Reverse V oltage CHARACTERISTICS VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TL =75°C UNIT I(AV) 1.0 A IFSM 30 A Peak For ward Surge Current 8.3ms single half sine- wave super imposed on rated load (JEDEC METHOD) Maxi mum f orward Voltage at 1.0A DC VF Maxi mum DC Reverse Cur rent @TJ =25°C at Rated DC Blocking Voltage @TJ =100°C Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3 ) Oper ating Temperature Range Storage Temperature Range 1.0 1.3 1.5 1.7 5 IR V uA 100 TRR 50 75 ns CJ 20 10 pF RθJL 30 °C/W TJ -55 to +150 °C TSTG -55 to +150 °C NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A. 2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3.Thermal Resistance junction to Lead. http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERISTIC CURVES UF1A~UF1M trr +0.5A 0 -0.25 -1.0 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. 1cm SET TIME BASE FOR 50 ns/cm Source Impedance = 50 Ohms Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 10 IFM, Apk PEAK FORWARD SURGE CURRENT, AMPERES TJ = 25 °C TYPICAL UF1A 1.0 UF1G 0.1 UF1K 100 TJ = 25 °C f = 1.0MHz Vsig = 50m Vp-p 10 1 0.1 1 10 100 .01 0 .2 .4 .6 .8 1.0 1.2 REVERSE VOLTAGE, VOLTS 1.4 AVERAGE FORWARD CURRENT AMPERES 2.0 Fig. 3- TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT, AMPERES Fig. 2-FORWARD CHARACTERISTICS SINGLE PHASE HALF WAVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON 0.315×0.315"(8.0×8.0mm) PAD AREAS 1.0 25 50 75 25 8.3ms SINGLE HALF SINE WAVE 20 JEDEC METHOD 15 10 5 1 100 125 150 175 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz LEAD TEMPERATURE, °C Fig. 4- FORWARD CURRENT DERATING CURVE http://www.yeashin.com 30 Fig. 5-PEAK FORWARD SURGE CURRENT 2 REV.02 20110725 100