DATA SHEET US1A~US1M SEMICONDUCTOR SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts ULT RA FAST RECTI FIERS FORWARD CURRENT - 1.0 Ampere FEATURES SMA/DO-214AC • Glass passivated chip Unit:inch(mm) • Ultra fast switching for high efficiency .062(1.60) .047(1.20) • For surface mounted applications • Low forward voltage drop and high current capability .114(2.90) .098(2.50) • Low reverse leakage current • Plastic material has UL flammability classification 94V-0 • High temperature soldering : 260OC°C10 / seconds at terminals .181 (4.60) .157(4.00) • Pb free product at available : 99% Sn above meet RoHS environment substance directive request MECHANCALDATA • Case: ITO-220AB full molded plastic package .096(2.44) .078(2.00) .012(.305) • Case : Molded plastic .006(.152) • Polarity : Indicated by cathode band • Weight : 0.002 ounces, 0.064 grams .008(.203 ) .002(.051) .060(1.52) .030(0.76) .208(5.28) .188(4.80) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL US1A US1B US1D US1G US1J US1K US1M UNITS Maximum Recurrent Peak Reverse V oltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TL =75 °C IAV 1.0 A IFSM 30 A Peak Forward Surge Current 8.3ms single half sine- wave super imposed on rated load (JEDEC METHOD) Maxi mum f orward Voltage at 1.0A DC Maxi mum DC Reverse Cur rent @TJ =25 °C at Rated DC Blocking Voltage @TJ =100 °C VF 1.3 Typical Junction Capacitance (Note 2) 1.5 1.7 5 IR Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3 ) 1.0 V µA 100 CJ 20 10 pF TRR 50 75 ns °C/W R JC 30 TJ -55 to +150 °C -55 to +150 °C Operati ng Temperature Range Storage Temperature Range TSTG NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC. 2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A. 3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted. http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERISTIC CURVES US1A~US1M trr +0.5A 0 -0.25 -1.0 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. 1cm SET TIME BASE FOR 50 ns/cm Source Impedance = 50 Ohms Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 10 AVERAGE FORWARD CURRENT, AMPERES TJ = 25 °C TYPICAL US1A IFM, Apk 1.0 US1G 0.1 US1M 2.0 1.0 .01 0 .2 .4 .6 SINGLE PHASE HALF WAVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON 0.315×0.315"(8.0×8.0mm) PAD AREAS 25 .8 1.0 1.2 50 75 100 125 150 175 1.4 LEAD TEMPERATURE, Fig. 2-FORWARD CHARACTERISTICS Fig. 3-FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT, AMPERES JUNCTION CAPACITANCE, pF 100 TJ = 25 °C f = 1.0MHz Vsig = 50m Vp-p 10 1 0.1 1 10 100 REVERSE VOLTAGE, VOLTS 25 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 20 15 10 5 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz Fig. 4-TYPICAL JUNCTION CAPACITANCE http://www.yeashin.com 30 Fig. 5-PEAK FORWARD SURGE CURRENT 2 REV.02 20110725 100