ACE ACE2305

ACE2305
Technology
P-Channel Enhancement Mode MOSFET
Description
The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
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-15V/-3.5A, RDS(ON)=70mΩ@VGS=-4.5V
-15V/-3.0A, RDS(ON)=85mΩ@VGS=-2.5V
-15V/-2.0A, RDS(ON)=105mΩ@VGS=-1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Application
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Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS
-15
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=70℃
ID
-3.5
-2.8
A
Pulsed Drain Current
IDM
-10
A
Continuous Source Current (Diode Conduction)
IS
-1.6
A
Power Dissipation
TA=25℃
TA=70℃
PD
Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
1.25
0.8
150
W
℃
-55/150 ℃
120
℃/W
VER 1.2
1
ACE2305
Technology
P-Channel Enhancement Mode MOSFET
Packaging Type
SOT-23-3
3
Pin
1
2
3
1
Description
Gate
Source
Drain
2
Ordering information
Selection Guide
ACE2305 XX +
Pb - free
BM: SOT-23-3
VER 1.2
2
ACE2305
Technology
P-Channel Enhancement Mode MOSFET
Electrical Characteristics
(TA=25℃, Unless otherwise noted)
Parameter
Symbol
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(ON)
Drain-Source On-Resistance
RDS(ON)
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
Min.
Typ
Max.
VGS=0V, ID=-250uA
-15
VDS=VGS, ID=-250uA
-0.35
-0.85
VDS=0.V, VGS=±10V
±100
VDS=-12V, VGS=0V
-1
-10
VDS=-12V, VGS=0V TJ=55℃
VDS≦-5V, VGS=-4.5V
-4
-2
VDS≦-5V, VGS=-2.5V
VGS=-4.5V, ID=-3.5A
0.055 0.70
VGS=-2.5V, ID=-3.0A
0.065 0.85
VGS=-1.8V, ID=-2.0A
0.085 0.105
VDS=-5.0V, ID=-3.5A
8.5
IS=-1.5A, VGS=0V
-0.8
-1.2
VDS=-6V, VGS=-4.5V,
ID≣-2.8A
VDS=-6V, VGS=0V,
f=1MHz
VDD=-6V, RL=6Ω
ID≡-1.0A, VGEN=-4.5V
RG=6Ω
4.8
1.0
1.0
485
85
40
10
13
18
15
Unit
V
nA
uA
A
Ω
S
V
8
nC
pF
16
23
25
20
ns
VER 1.2
3
ACE2305
Technology
Typical
P-Channel Enhancement Mode MOSFET
Characteristics
Output Characteristics
VDS – Drain to Source Voltage (V)
On-Resistance vs. Drain Current
ID – Drain Current (A)
Transfer Characteristics
VGS – Gate to Source Voltage (V)
Capacitance
VDS – Drain to Source Voltage (V)
VER 1.2
4
ACE2305
Technology
Typical
P-Channel Enhancement Mode MOSFET
Characteristics
Gate Charge
Oq Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
VSD Source to Drain Voltage (V)
On-Resistance vs. Junction Temperature
TJ – Junction Temperature (℃)
On-Resistance vs. Gate-to-Source Voltage
VGS – Gate to Source Voltage (V)
VER 1.2
5
ACE2305
Technology
Typical
P-Channel Enhancement Mode MOSFET
Characteristics
Threshold Voltage
TJ – Temperature
Single Pulse Power
Time(sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration(sec)
VER 1.2
6
ACE2305
Technology
P-Channel Enhancement Mode MOSFET
Packing Information
VER 1.2
7
ACE2305
Technology
P-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
8