HELP3E AWU6616 Dual-band 1 & 5, 6 CDMA/WCDMA 3.4 V Linear Power Amplifier Module TM Data Sheet - Rev 2.3 FEATURES • InGaP HBT Technology • High Efficiency (R99): • 37 % @ POUT = +28.1 dBm (Band 1) • 38 % @ POUT = +28.7 dBm (Band 5, 6) • 24 % @ POUT = +16.5 dBm • 8.5 % @ POUT = +8 dBm AW U 661 • Low Quiescent Current: 4 mA TE • Internal Voltage Regulation • Built-in Directional Coupler • Common VMODE Control Line • Simplified VCC Bus PCB routing • Reduced External Component Count • Low Profile Surface Mount Package: 1 mm LE M47 Package 14 Pin 3 mm x 5 mm x 1 mm Surface Mount Module • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS 6 power levels where the PA typically operates, thereby dramatically increasing handset talk-time. Its built-in voltage regulator eliminates the need for external switches. This PA has built-in directional couplers for each band, with a common coupler output port CPL_OUT. These couplers provide high directivity and 23 dB Coupling. The 3 mm x 5 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 Ω system. O • Band 1 +5, 6 Dual-band WCDMA/HSPA wireless devices Band Class 0+6 Dual-band CDMA/EVDO wireless devices. • Band Class 0+6 Dual-band EVDO Rev. B wireless devices. BS • PRODUCT DESCRIPTION O AWU6616 addresses the demand for increased integration in dual-band handsets for WCDMA and CDMA networks. The small footprint 3 mm x 5 mm x 1 mm surface- mount RoHS compliant package contains independent RF PA paths to ensure optimal performance in both frequency bands, while achieving a 25% PCB space savings compared with solutions requiring two single-band PAs. The package pinout was chosen to enable handset manufacturers to easily route bias to both power amplifiers and simplify control with common mode pins. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. The AWU6616 is part of ANADIGICS’ High-Efficiency-at-Low-Power (HELP™) family of WCDMA power amplifiers, which deliver low quiescent currents and significantly greater efficiency without the need of an external DC-DC converter. Through selectable bias modes, the AWU6616 achieves optimal efficiency, specifically at low- and mid-range 02/2012 VEN_800 1 14 GND Bias Control Voltage Regulation RFIN_800 2 CPL VMODE1 3 12 VCC VBATT 4 11 VCCA VMODE2 5 10 CPLOUT RFIN_IMT 6 VEN_IMT 7 13 RFOUT_800 CPL Bias Control Voltage Regulation 9 GND 8 RFOUT_IMT GND at Slug (pad) Figure 1: Block Diagram AWU6616 VEN_800 RFIN_800 RFOUT_800 VMODE1 VMODE2 CPLOUT TE RFIN_IMT VEN_IMT LE RFOUT_IMT Figure 2: Pinout Table 1: Pin Description PIN NAME 1 VEN_800 Enable Voltage for CELL & JCELL Band RFIN_800 RF Input for CELL & JCELL Band O 2 DESCRIPTION VMODE1 Mode Control Voltage for CELL & JCELL & IMT Bands 4 VBATT Battery Voltage 5 VMODE2 Mode Control Voltage for CELL & JCELL & IMT Band 6 RFIN_IMT RF Input for IMT Band 7 VEN_IMT Enable Voltage for IMT Band 8 RFOUT_IMT 9 GND 10 CPLOUT 11 VCCA 12 VCC 13 RFOUT_800 14 GND O BS 3 2 RF Output for IMT Band Ground Coupler Output Port Battery Voltage A Supply Voltage RF Output for CELL & JCELL Band Ground Data Sheet - Rev 2.3 02/2012 AWU6616 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VBATT, VCC, VCCA) 0 +5 V Mode Control Voltage (VMODE1, VMODE2) 0 +3.5 V Enable Voltage (VEN_CELL, VEN_PCS) 0 +3.5 V RF Input Power (PIN) - +10 dBm -40 +150 °C Storage Temperature (TSTG) TE Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges MIN TYP Operating Frequency (f) 824 1920 - Supply Voltage (VCC and VBATT) MAX UNIT COMMENTS 849 1980 MHz UMTS Band 5, 6, CDMA BC 0 UMTS Band 1, CDMA BC 6 LE PARAMETER +3.2 +3.4 +4.2 V +1.35 0 +1.8 - +3.1 +0.5 V PA "on" PA "shut down" +1.35 0 +1.8 - +3.1 +0.5 V Low Bias Mode High Bias Mode 28.0(1) 27.0(1) 16.5(1) 15.5(1) 8.0(1) 7.0(1) 28.7 27.7 16.6 15.6 8.0 7.0 - RF Output Power, Band Class 0 CDMA2000, HPM CDMA2000, MPM CDMA2000, LPM 27.0 - 27.8 16.0 7.5 - RF Output Power, Band 1, UMTS R99 WCDMA, HPM HSPA (MPR = 0 dB), HPM R99 WCDMA, MPM HSPA (MPR = 0 dB), MPM R99 WCDMA, LPM HSPA (MPR = 0 dB), LPM 27.6(1) 26.6(1) 16.0(1) 15.0(1) 8.0(1) 7.0(1) 28.1 27.1 16.5 15.5 8.0 7.0 - RF Output Power, Band Class 6 CDMA2000, HPM CDMA2000, MPM CDMA2000, LPM 27.0 (1) - 27.5 16.0 7.5 - dBm -30 - +90 °C Enable Voltage (VEN) O Mode Control Voltage (VMODE1, VMODE2) O BS RF Output Power, Band 5, 6 UMTS R99 WCDMA, HPM HSPA (MPR = 0 dB), HPM R99 WCDMA, MPM HSPA (MPR = 0 dB), MPM R99 WCDMA, LPM HSPA (MPR = 0 dB), LPM Case Temperature (TC) dBm dBm dBm 3GPP TS 34.121-1, REL8 Table C.11.1.3 SUBTEST 1 CDMA2000 RC-1 3GPP TS 34.121-1, REL8 Table C.11.1.3 SUBTEST 1 CDMA2000 RC-1 The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1)For operation at VCC = +3.2 V, POUT is derated by 0.5 dB. 3 Data Sheet - Rev 2.3 02/2012 AWU6616 Table 4: Electrical Specifications - WCDMA Operation (Band 5 & 6) (TC = +25 °C, VBATT = VCC = +3.4 V, VEN_CELL = +1.8 V, 50 Ω system, R99 uplink waveform) COMMENTS PARAMETER MIN TYP MAX UNIT Gain 25 14.5 9 27.5 17 12 30 20 14 dB +28.7 dBm 0 V +16.6 dBm 1.8 V +8 dBm 1.8 V 0V 0V 1.8 V - -42 -42 -41 -37.5 -37 -37 dBc +28.7 dBm 0 V +16.6 dBm 1.8 V +8 dBm 1.8 V 0V 0V 1.8 V ACLR2 @ 10 MHz Offset (1) - -58 -55 -54 -48 -48 -48 dBc +28.7 dBm 0 V +16.6 dBm 1.8 V +8 dBm 1.8 V 0V 0V 1.8 V Power-Added Efficiency (1) 34 18 6 38 21 8 - % +28.7 dBm 0 V +16.6 dBm 1.8 V +8 dBm 1.8 V 0V 0V 1.8 V Quiescent Current (Icq) - Mode Control Current - TE 7 mA through VBATT and VCC pins, VMODE1 = +1.8 V, VMODE2 =+1.8 V <0.1 0.2 mA through VMODE pins, VMODE1= +1.8 V - 1.5 3 mA through VBATT pin, VMODE1 = +1.8 V, VMODE2 = +1.8 V - 0.15 0.3 mA through VEN_800 pin BS Enable Current - -133 - dBm/Hz Harmonics 2fo 3fo, 4fo - -40 -50 -30 -38 dBc Input Impedance - - 2:1 VSWR Coupling Factor - 23 - dB O Noise in Receive Band Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - - -65 dBc 8:1 - - VSWR Notes: (1) PAE and ACP limit applies at 836.5 MHz. 4 VMODE2 4 O Battery Current VMODE1 LE ACLR1 @ 5 MHz Offset (1) POUT Data Sheet - Rev 2.3 02/2012 869 MHz to 894 MHz POUT < +28.7 dBm POUT < +28.7 dBm In-band Load VSWR < 5:1 Out-of-band Load VSWR < 10:1 Applies over all operating conditions Applies over full operating conditions AWU6616 Table 5: Electrical Specifications - CDMA2000 Operation (Band Class 0) (TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system, RC-1 Waveform) MIN TYP MAX UNIT Gain 24.5 13.5 7.5 26.5 16.5 11 30 19 14 Adjacent Channel Power at 885 kHz offset Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz - -51 -51 -51 -46.5 -46.5 -46.5 Adjacent Channel Power at 1.98 MHz offset Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz - -60 -60 -60 -55 -55 -55 dBc +27.8 dBm +16 dBm +7.5 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V - 35 19 7 - % +27.8 dBm +16 dBm +7.5 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V Spurious Output Level (all spurious outputs) - VMODE2 dB +27.8 dBm +16 dBm +7.5 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V dBc +27.8 dBm +16 dBm +7.5 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V 8:1 - - dBc VSWR O BS Load mismatch stress with no permanent degradation or failure VMODE1 TE -70 O - POUT LE Power-Added Efficiency 5 COMMENTS PARAMETER Data Sheet - Rev 2.3 02/2012 POUT +27.8 dBm In-band Load VSWR < 5:1 Out-of-band Load VSWR < 10:1 Applies over all operating conditions Applies over all operating conditions AWU6616 Table 6: Electrical Specifications - WCDMA Operation (Band 1) (TC = +25 °C, VBATT = VCC = +3.4 V, VEN_PCS = +1.8 V, 50 Ω system, R99 uplink waveform) TYP MAX UNIT 24 12 7 26.5 14.5 10 30 18 13 dB +28.1 dBm +16.5 dBm +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V ACLR1 @ 5 MHz Offset (1) - -41 -41 -43 -37 -36 -36 dBc +28.1 dBm +16.5 dBm +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V ACLR2 @ 10 MHz Offset (1) - -55 -56 -55 -48 -48 -48 dBc +28.1 dBm +16.5 dBm +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V Power-Added Efficiency (1) 33 20 6 37 24 8.5 - % +28.1 dBm +16.5 dBm +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V Quiescent Current (Icq) - 4 7 mA Mode Control Current - 0.1 0.2 mA tthrough VMODE pins, VMODE1= +1.8 V VMODE2 = +1.8 V Battery Current - 1.4 3 mA through VBATT pin, VMODE1 = +1.8 V, VMODE2 = +1.8 V Enable Current TE LE mA through VEN_IMT pin - <1 5 A VBATT = +4.2 V, VCC = +4.2 V, VEN_IMT = 0 V, VMODE1 = 0 V, VMODE2 = 0 V VBATT = +4.2 V, VCC = +4.2 V, VEN_IMT = 0 V, VMODE1 = 0 V, VMODE2 = 0 V 14 22 A Noise in Receive Band - -136 -134 dBm/Hz Harmonics 2fo 3fo, 4fo - -42 -50 -30 -38 dBc Input Impedance - - 2:1 VSWR Coupling Factor - 23 - dB O through VBATT and VCC pins, VMODE1 = +1.8 V, VMODE2 =+1.8 V 0.3 - Load mismatch stress with no permanent degradation or failure VMODE2 VMODE1 0.15 Total Decoder Current on VBATT (Shutdown Mode) Spurious Output Level (all spurious outputs) POUT - BS HBT Leakage Current on VCC (Shutdown Mode) O Gain 2110 MHz to 2170 MHz POUT < +28.1 dBm - - -65 dBc POUT < +28.1 dBm In-band Load VSWR < 5:1 Out-of-band Load VSWR < 10:1 Applies over all operating conditions 8:1 - - VSWR Applies over full operating conditions Notes: (1) ACPRs and Efficiency limits at 1950 MHz. 6 COMMENTS MIN PARAMETER Data Sheet - Rev 2.3 02/2012 AWU6616 Table 7: Electrical Specifications - CDMA2000 Operation (Band Class 6) (TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system, RC-1) PARAMETER MIN TYP MAX UNIT Gain 23 10.5 6 25 13.5 9.5 29 17 13 Adjacent Channel Power at +1.25 MHz offset Primary Channel BW - 1.23 MHz Adjacent Channel BW = 30 kHz - -51 -51 -51 -46.5 -46.5 -46.5 Adjacent Channel Power at +1.98 MHz Primary Channel BW=1.23 MHz Adjacent Channel BW=30 kHz - -55 -55 -55 -49 -49 -49 dBc - 33 18 7 - % Spurious Output Level (all spurious outputs) - 8:1 - - O BS Load mismatch stress with no permanent degradation or failure 7 VMODE1 VMODE2 dB +27.5 dBm +16 dBm +7.5 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V dBc +27.5 dBm +16 dBm +7.5 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V +27.5 dBm +16 dBm +7.5 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V +27.5 dBm +16 dBm +7.5 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V TE -70 O - POUT LE Power-Added Efficiency COMMENTS Data Sheet - Rev 2.3 02/2012 dBc VSWR POUT < +27.5 dBm, In-Band VSWR < 5:1, Out-Of-Band VSWR < 10:1. Applies to all operating condtions. Applies over full operating range AWU6616 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VENABLE and VMODE voltages. Bias Modes, Medium Bias Mode The power amplifier may be placed in Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to the VMODE1, and VMODE2 pins. The Bias Control table lists the recommended modes of operation for various applications. Vcontrols Venable/Vmode(s) TE On Sequence Start T_0N = 0µ Rise/Fall Max 1µS Defined at 10% to 90% of Min/Max Voltage Off Sequence Start T_0FF = 0µ OFF Sequence LE ON Sequence RFIN_800, IMT O notes 1,2 VCC/VCCA note 1 BS VEN_800, IMT T_0N+1µS T_0N+3µS O Referenced After 90% of Rise Time T_0FF+2µS T_0FF+3µS Referenced Before10% of Fall Time Figure 3: Recommended ON/OFF Timing Sequence Notes: (1) Level might be changed after RF is ON. (2) RF OFF defined as PIN ≤ -30 dBm. (3) Switching simultaneously between VMODE and VEN is not recommended. 8 Data Sheet - Rev 2.3 02/2012 AWU6616 Table 8: Bias Control APPLICATION POUT LEVELS BIAS MODE VEN WCDMA - low power (Low bias Mode) < +8 dBm Low +1.8 V +1.8 V WCDMA- med power (Medium Bias Mode) > 8 dBm +16.5 dBm Low +1.8 V WCDMA - high power (High Bias Mode) > +16.5 dBm High +1.8 V - Shutdown 0V VBATT +1.8 V 3.2 - 4.2 V > 3.2 V +1.8 V 0V 3.2 - 4.2 V > 3.2 V 0V 0V 3.2 - 4.2 V > 3.2 V TE 0V 0V 3.2 - 4.2 V > 3.2 V O LE Shutdown VCC VMODE1 VMODE2 VEN_800 1 14 RFIN_800 2.2 F RFIN_IMT VEN_IMT 68pF VCC 1000 pF 4 11 1000 pF 5 10 CPL 6 7 RFOUT_800 12 Bias Control Voltage Regulation GND at Slug (pad) Figure 4: Application Circuit 9 13 68 pF 3 VBATT VMODE2 CPL 2 O VMODE1 BS Bias Control Voltage Regulation Data Sheet - Rev 2.3 02/2012 2.2 F CPLOUT 9 8 33 pF RFOUT_IMT AWU6616 BS O LE TE PACKAGE OUTLINE O Figure 5: Package Outline - 14 Pin 3 mm x 5 mm x 1 mm Surface Mount Module Figure 6: Branding Specification 10 Data Sheet - Rev 2.3 02/2012 AWU6616 TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWU6616Q7 -30 °C to +90 °C RoHS Compliant 14 Pin 3 mm x 5 mm x 1 mm Surface Mount Module Tape and Reel, 2500 pieces per Reel AWU6616P9 -30 °C to +90 °C RoHS Compliant 14 Pin 3 mm x 5 mm x 1 mm Surface Mount Module Partial Tape and Reel ANADIGICS O LE TE ORDER NUMBER BS ORDERING INFORMATION O 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 11 Data Sheet - Rev 2.3 02/2012