ALT6705 - Anadigics

ALT6705
HELP4 UMTS800 (Bands 5, 6, 18, 19, & 26)
LTE, WCDMA, CDMA Multimode PAM
TM
Data Sheet - Rev 2.5
FEATURES
• Multimode (LTE, HSPA, EV-DO Compliant)
• 4th Generation HELPTM technology
• High Efficiency (R99 waveform):
• 40 % @ POUT = +28.4 dBm
• 27 % @ POUT = +17 dBm
• 18 % @ POUT = +13.5 dBm
• 20 % @ POUT = +8 dBm
• 11 % @ POUT = +3.5 dBm
ALT6705
• Low Quiescent Current: 3 mA
• Low Leakage Current in Shutdown Mode: <5 µA
• Internal Voltage Regulator
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
• Integrated “daisy chainable” directional coupler
with CPLIN and CPLOUT port
• Internal DC Blocks on all RF ports
• Optimized for a 50 Ω System
mode with low leakage current increase handset
talk and standby time. A “daisy chainable” directional
coupler is integrated in the module thus eliminating
the need of an external coupler. The self-contained
3 mm x 3 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 Ω system.
• 1.8V Control Logic
• RoHS Compliant Package, 260 oC MSL-3
APPLICATIONS
• Bands 5, 6, 18, 19, & 26 LTE Wireless Devices
• Bands 5, 6, 18, 19, & 26 WCDMA/HSPA
Wireless Devices
GND at Slug (pad)
• Band Class 0 CDMA/EVDO Wireless Devices
VBATT
1
RFIN
2
VMODE2
3
VMODE1
VEN
10
VCC
PRODUCT DESCRIPTION
The ALT6705 HELP4TM PA is the 4th generation
HELP TM product for LTE and WCDMA devices
operating in UMTS800 (Bands 5, 6, 18,19, & 26)
and for CDMA devices operating in Cell-band. This
PA incorporates ANADIGICS’ HELP4TM technology
to deliver exceptional efficiency at low power
levels and low quiescent current without the need
for external voltage regulators or converters. The
device is manufactured using advanced InGaPPlus TM HBT technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Three selectable bias modes that optimize efficiency
for different output power levels and a shutdown
03/2012
9
RFOUT
8
CPLIN
4
7
GND
5
6
CPLOUT
CPL
Bias Control
Voltage Regulation
Figure 1: Block Diagram
ALT6705
VBATT
1
10
RFIN
2
9
RFOUT
VMODE2
3
8
CPLIN
VMODE1
4
7
GND
VEN
5
6
CPLOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
2
PIN
NAME
DESCRIPTION
1
VBATT
Battery Voltage
2
RFIN
RF Input
3
VMODE2
Mode Control Voltage 2
4
VMODE1
Mode Control Voltage 1
5
VEN
6
CPLOUT
7
GND
Ground
8
CPLIN
Coupler Input
9
RFOUT
RF Output
10
VCC
PA Enable Voltage
Coupler Output
Supply Voltage
Data Sheet - Rev 2.5
03/2012
VCC
ALT6705
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VCC)
0
+5
V
Battery Voltage (VBATT)
0
+6
V
Control Voltages (VMODE1, VMODE2, VEN)
0
+3.5
V
RF Input Power (PIN)
-
+10
dBm
-40
+150
°C
Storage Temperature (TSTG)
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
COMMENTS
Operating Frequency (f)
814
-
849
MHz
Supply Voltage (VCC)
+3.1
+3.4
+4.35
V
POUT ≤ +28.4 dBm
Enable Voltage (VEN)
+1.35
0
+1.8
-
+3.1
+0.5
V
PA “on”
PA “shut down”
Mode Control Voltage (VMODE1, VMODE2)
+1.35
0
+1.8
-
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
WCDMA/UMTS Output Power (1, 3)
R99, HPM
HSPA (MPR = 0), HPM
LTE(2) (MPR = 0), HPM
R99, MPM
LTE(2) & HSPA (MPR = 0), MPM
R99, LPM
LTE(2) & HSPA (MPR = 0), LPM
27.6
26.6
26.4
-
28.4
27.4
27.2
17.0
16.0
8.0
7.0
-
CDMA Output Power (1, 3)
HPM
MPM
LPM
26.9
-
27.7
16.0
7.0
-
Case Temperature (Tc)
-40
-
+90
dBm
3GPP TS 34.121-1, Rel 8
Table C.11.1.3 for WCDMA
SUBTEST 1
TS 36.101 Rel 8 for LTE
dBm
CDMA 2000, RC1
8C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For operation at 3.1 V, POUT is derated by 0.8 dB.
(2) LTE waveform characteristics: up to 15 MHz, QPSK, RB = 16.
(3) For operation at +105 °C, POUT is derated by 1.0 dB.
3
Data Sheet - Rev 2.5
03/2012
ALT6705
Table 4: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK)
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
26
16
10
29
19
13.5
32
22
16
ACLR E-UTRA
at  10 MHz offset
-
-41
-40
-40
-35
-35
-35
ACLR UTRA
at  7.5 MHz offset
-
-40
-39
-40
-36
-36
-36
ACLR UTRA
at  12.5 MHz offset
-
-60
-58
-57
-40
-40
-40
31
20
14
36
24
18
Quiescent Current (Icq)
Low Bias Mode
-
Mode Control Current
UNIT
POUT
VMODE1
VMODE2
POUT = +27.2 dBm
POUT = +16 dBm
POUT = +7 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
POUT = +27.2 dBm
POUT = +16 dBm
POUT = +7 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
POUT = +27.2 dBm
POUT = +16 dBm
POUT = +7 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
dBc
POUT = +27.2 dBm
POUT = +16 dBm
POUT = +7 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-
%
POUT = +27.2 dBm
POUT = +16 dBm
POUT = +7 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
3
4.0
mA
through VCC pin
1.8 V
1.8 V
-
0.06
0.15
mA
through VMODE pins, VMODE = 1.8 V
Enable Current
-
0.04
0.12
mA
through VEN pin
BATT Current
-
0.7
1.2
mA
through VBATT pin, VMODE1 = +1.8 V,
VMODE2 = +1.8 V
Leakage Current
-
<5
10
A
VBATT = +4.35 V, VCC = +4.35 V,
VEN =0 V, VMODE = 0 V,
VMODE1 = 0 V
Noise in Receive Band
-
-134
-
Harmonic
2fo
3fo, 4fo
-
-48
-60
-35
-42
dBc
Coupling Factor
-
20
-
dB
Directivity
-
20
-
dB
Coupler IN_OUT
Daisy Chain Insertion Loss
-
<0.3
-
dB
698 MHz to 2620 MHz
Pin 8 - 6, Shutdown Mode
Spurious Output Level
(all spurious outputs)
-
-
<-70
dBc
POUT < +27.2 dBm
In-band Load VSWR < 5:1
Out-of-band Load VSWR < 10:1
Applies over all operating conditions
8:1
-
-
VSWR
Applies over all operating conditions
Gain
Power-Added Efficiency (1)
Load mismatch stress with no
permanent degradation or failure
dB
dBc
dBc
dBm/Hz 869 MHz to 894 MHz
Notes:
(1) ACLR and Efficiency measured at 832 MHz.
4
COMMENTS
Data Sheet - Rev 2.5
03/2012
POUT 27.2 dBm
ALT6705
Table 5: Electrical Specifications - WCDMA Operation (R99 Modulation)
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system)
MIN
TYP
MAX
UNIT
26
16
10
29
19
13.5
32
22
16
ACLR1 at 5 MHz offset (1)
-
-41
-42
-40
ACLR2 at 10 MHz offset
36
23
16
-
PARAMETER
Gain
Power-Added Efficiency (1)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
POUT
VMODE1
VMODE2
dB
POUT = +28.4 dBm
POUT = +17 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-37
-37
-37
dBc
POUT = +28.4 dBm
POUT = +17 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-57
-58
-59
-48
-48
-48
dBc
POUT = +28.4 dBm
POUT = +17 dBm
POUT = +8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
40
27
18
20
11
-
%
POUT = +28.4 dBm
POUT = +17 dBm
POUT = +13.5 dBm
POUT = +8 dBm
POUT = +3.5 dBm
0V
1.8 V
1.8 V
1.8 V
1.8 V
0V
0V
0V
1.8 V
1.8 V
-
-
-70
dBc
8:1
-
-
VSWR
Notes:
(1) ACLR and Efficiency measured at 832 MHz.
5
COMMENTS
Data Sheet - Rev 2.5
03/2012
POUT < +28.4 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Applies over full operating range
ALT6705
Table 6: Electrical Specifications - CDMA2000 Operation (RC-1 waveform)
(TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
26
16
10
29
19
13.5
32
22
16
Adjacent Channel Power
at ±885 kHz offset (1)
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-50
-50
-50
-46.5
-46.5
-46.5
Adjacent Channel Power
at ±1.98 MHz offset (1)
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-59
-60
-60
-56
-56
-56
33
20
13
37
23
17
-
%
-
-
-70
dBc
8:1
-
-
Gain
Power-Added Efficiency (1)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
UNIT
dB
dBc
dBc
POUT
VMODE1
VMODE2
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +7 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +7 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +7 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +7 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
POUT < +27.7 dBm
In-band Load VSWR < 5:1
Out-of-band Load VSWR < 10:1
Applies over all operating conditions
VSWR Applies over all operating conditions
Notes:
(1) ACLR and Efficiency measured at 832 MHz.
6
COMMENTS
Data Sheet - Rev 2.5
03/2012
ALT6705
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
to the VMODE voltages. The Bias Control table below
lists the recommended modes of operation for various
applications.
Shutdown Mode
The power amplifier may be placed in a shutdown mode
by applying logic low levels (see Operating Ranges
table) to the VEN, VMODE1 and VMODE2 voltages.
Three operating modes are recommended to optimize
current consumption. High Bias/High Power operating
mode is for POUT levels > 17 dBm. At ~17dBm - 8
dBm, the PA should be “Mode Switched” to Medium
Power Mode. For POUT levels < ~7 dBm, the PA can be
switched to Low Power Mode for even lower quiescent
current consumption.
Bias Modes
The power amplifier may be placed in either Low,
Medium or High Bias modes by applying the
appropriate logic level (see Operating Ranges table)
Table 7: Bias Control
APPLICATION
POUT
LEVELS
BIAS
MODE
VEN
VMODE1
VMODE2
VCC
VBATT
Low power
(Low Bias Mode)
 +7 dBm
Low
+1.8 V
+1.8 V
+1.8 V
3.1 - 4.35 V
> 3.1 V
Med power
(Medium Bias Mode)
> 7 dBm
 +17 dBm
Low
+1.8 V
+1.8 V
0V
3.1 - 4.35 V
> 3.1 V
High power
(High Bias Mode)
> +17 dBm
High
+1.8 V
0V
0V
3.1 - 4.35 V
> 3.1 V
-
Shutdown
0V
0V
0V
3.1 - 4.35 V
> 3.1 V
Shutdown
VBATT
VCC
C5
2.2 µF
C1
C9
0.01 µF 100 pF
GND at slug
1
2
RFIN
VMODE2
VMODE1
VEN
3
VBATT
VCC
RFIN
RFOUT
10
9
VMODE2
CPLIN
8
4
VMODE1
GND
7
5
VEN
CPLOUT 6
Figure 3: Evaluation Board Schematic
7
Data Sheet - Rev 2.5
03/2012
C3
330 pF
C2
C4
0.01 µF 2.2 µF ceramic
RFOUT
CPLIN
CPLOUT
ALT6705
Performance Data Plots:
35
FigureFigure
4: LTE
Gain
overTemperature
Temperature
4: LTE
Gain(dB)
(dB) over
(Vbatt=VCC=3.4V)
(VBATT
= VCC = 3.4 V)
Figure
LTE Gain
(dB)
overover
Voltage
Figure
5:5:LTE
Gain
(dB)
Voltage
(Tc=25C)
(T
C = 25 8C)
35
25C 3.2Vcc
-30C 3.4Vcc
30
25C 3.4Vcc
30
25C 3.4Vcc
25C 4.2Vcc
25
25
20
20
Gain (dB)
Gain (dB)
90C 3.4Vcc
15
10
15
10
5
5
0
0
5
10
15
20
25
0
30
0
Pout (dBm)
5
10
15
20
25
30
Pout (dBm)
Figure
6: LTE
PAE(%)
(%) over
Figure
6: LTE
PAE
overTemperature
Temperature
(Vbatt=VCC=3.4V)
(VBATT = VCC = 3.4 V)
50
25C 3.2Vcc
25C 3.4Vcc
40
25C 3.4Vcc
50
90C 3.4Vcc
35
25C 4.2Vcc
40
30
Efficiency
Efficiency (%)
60
-30 3.4cc
45
Figure
7: LTE
PAE (%)
Voltage
Figure
7: LTE
PAE
(%)over
over
Voltage
(TC(Tc=25C)
= 25 8C)
25
20
15
10
30
20
10
5
0
0
0
5
10
15
20
25
30
0
5
10
-35
-35
-30C 3.4Vcc
30
Figure 9: LTE ACLR1
(dBc) over Voltage
(Tc=25C)
(TC = 25 8C)
25C 3.4Vcc
-40
ACLR1 (5MHz dBc)
-45
ACLR1 (5MHz dBc)
25
25C 3.2Vcc
25C 3.4Vcc
90C 3.4Vcc
-50
-55
-60
-65
25C 4.2Vcc
-45
-50
-55
-60
-70
0
8
20
Figure 9: LTE ACLR1 (dBc) over Voltage
Figure 8:Figure
LTE8: ACLR1
over
Temperature
LTE ACRL1(dBc)
(dBc) over
Temperature
(Vbatt=VCC=3.4V)
(VBATT
= VCC = 3.4 V)
-40
15
Pout (dBm)
Pout (dBm)
5
10
15
Pout (dBm)
20
25
30
-65
0
Data Sheet - Rev 2.5
03/2012
5
10
15
Pout (dBm)
20
25
30
ALT6705
PACKAGE OUTLINE
Figure 10: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Pin 1 Identifier
Date Code (YYWW)
6705R
LLLLNN
YYWWCC
Part Number
Lot Number
Country Code(CC)
Figure 11: Branding Specification - M45 Package
9
Data Sheet - Rev 2.5
03/2012
ALT6705
PCB AND STENCIL DESIGN GUIDELINE
Figure 12: Recommended PCB Layout Information
10
Data Sheet - Rev 2.5
03/2012
ALT6705
COMPONENT PACKAGING
Pin 1
Figure 13: Carrier Tape
Figure 14: Reel
11
Data Sheet - Rev 2.5
03/2012
ALT6705
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ALT6705RM45Q7
-40 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel
Surface Mount Module
ALT6705RM45P9
-40 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Partial Tape and Reel
Surface Mount Module
COMPONENT PACKAGING
ANADIGICS
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
12
Data Sheet - Rev 2.5
03/2012