ALT6705 HELP4 UMTS800 (Bands 5, 6, 18, 19, & 26) LTE, WCDMA, CDMA Multimode PAM TM Data Sheet - Rev 2.5 FEATURES • Multimode (LTE, HSPA, EV-DO Compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.4 dBm • 27 % @ POUT = +17 dBm • 18 % @ POUT = +13.5 dBm • 20 % @ POUT = +8 dBm • 11 % @ POUT = +3.5 dBm ALT6705 • Low Quiescent Current: 3 mA • Low Leakage Current in Shutdown Mode: <5 µA • Internal Voltage Regulator M45 Package 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module • Integrated “daisy chainable” directional coupler with CPLIN and CPLOUT port • Internal DC Blocks on all RF ports • Optimized for a 50 Ω System mode with low leakage current increase handset talk and standby time. A “daisy chainable” directional coupler is integrated in the module thus eliminating the need of an external coupler. The self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. • 1.8V Control Logic • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • Bands 5, 6, 18, 19, & 26 LTE Wireless Devices • Bands 5, 6, 18, 19, & 26 WCDMA/HSPA Wireless Devices GND at Slug (pad) • Band Class 0 CDMA/EVDO Wireless Devices VBATT 1 RFIN 2 VMODE2 3 VMODE1 VEN 10 VCC PRODUCT DESCRIPTION The ALT6705 HELP4TM PA is the 4th generation HELP TM product for LTE and WCDMA devices operating in UMTS800 (Bands 5, 6, 18,19, & 26) and for CDMA devices operating in Cell-band. This PA incorporates ANADIGICS’ HELP4TM technology to deliver exceptional efficiency at low power levels and low quiescent current without the need for external voltage regulators or converters. The device is manufactured using advanced InGaPPlus TM HBT technology offering state-of-the-art reliability, temperature stability, and ruggedness. Three selectable bias modes that optimize efficiency for different output power levels and a shutdown 03/2012 9 RFOUT 8 CPLIN 4 7 GND 5 6 CPLOUT CPL Bias Control Voltage Regulation Figure 1: Block Diagram ALT6705 VBATT 1 10 RFIN 2 9 RFOUT VMODE2 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 VBATT Battery Voltage 2 RFIN RF Input 3 VMODE2 Mode Control Voltage 2 4 VMODE1 Mode Control Voltage 1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN Coupler Input 9 RFOUT RF Output 10 VCC PA Enable Voltage Coupler Output Supply Voltage Data Sheet - Rev 2.5 03/2012 VCC ALT6705 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +5 V Battery Voltage (VBATT) 0 +6 V Control Voltages (VMODE1, VMODE2, VEN) 0 +3.5 V RF Input Power (PIN) - +10 dBm -40 +150 °C Storage Temperature (TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency (f) 814 - 849 MHz Supply Voltage (VCC) +3.1 +3.4 +4.35 V POUT ≤ +28.4 dBm Enable Voltage (VEN) +1.35 0 +1.8 - +3.1 +0.5 V PA “on” PA “shut down” Mode Control Voltage (VMODE1, VMODE2) +1.35 0 +1.8 - +3.1 +0.5 V Low Bias Mode High Bias Mode WCDMA/UMTS Output Power (1, 3) R99, HPM HSPA (MPR = 0), HPM LTE(2) (MPR = 0), HPM R99, MPM LTE(2) & HSPA (MPR = 0), MPM R99, LPM LTE(2) & HSPA (MPR = 0), LPM 27.6 26.6 26.4 - 28.4 27.4 27.2 17.0 16.0 8.0 7.0 - CDMA Output Power (1, 3) HPM MPM LPM 26.9 - 27.7 16.0 7.0 - Case Temperature (Tc) -40 - +90 dBm 3GPP TS 34.121-1, Rel 8 Table C.11.1.3 for WCDMA SUBTEST 1 TS 36.101 Rel 8 for LTE dBm CDMA 2000, RC1 8C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at 3.1 V, POUT is derated by 0.8 dB. (2) LTE waveform characteristics: up to 15 MHz, QPSK, RB = 16. (3) For operation at +105 °C, POUT is derated by 1.0 dB. 3 Data Sheet - Rev 2.5 03/2012 ALT6705 Table 4: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK) (TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX 26 16 10 29 19 13.5 32 22 16 ACLR E-UTRA at 10 MHz offset - -41 -40 -40 -35 -35 -35 ACLR UTRA at 7.5 MHz offset - -40 -39 -40 -36 -36 -36 ACLR UTRA at 12.5 MHz offset - -60 -58 -57 -40 -40 -40 31 20 14 36 24 18 Quiescent Current (Icq) Low Bias Mode - Mode Control Current UNIT POUT VMODE1 VMODE2 POUT = +27.2 dBm POUT = +16 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V POUT = +27.2 dBm POUT = +16 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V POUT = +27.2 dBm POUT = +16 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V dBc POUT = +27.2 dBm POUT = +16 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V - % POUT = +27.2 dBm POUT = +16 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V 3 4.0 mA through VCC pin 1.8 V 1.8 V - 0.06 0.15 mA through VMODE pins, VMODE = 1.8 V Enable Current - 0.04 0.12 mA through VEN pin BATT Current - 0.7 1.2 mA through VBATT pin, VMODE1 = +1.8 V, VMODE2 = +1.8 V Leakage Current - <5 10 A VBATT = +4.35 V, VCC = +4.35 V, VEN =0 V, VMODE = 0 V, VMODE1 = 0 V Noise in Receive Band - -134 - Harmonic 2fo 3fo, 4fo - -48 -60 -35 -42 dBc Coupling Factor - 20 - dB Directivity - 20 - dB Coupler IN_OUT Daisy Chain Insertion Loss - <0.3 - dB 698 MHz to 2620 MHz Pin 8 - 6, Shutdown Mode Spurious Output Level (all spurious outputs) - - <-70 dBc POUT < +27.2 dBm In-band Load VSWR < 5:1 Out-of-band Load VSWR < 10:1 Applies over all operating conditions 8:1 - - VSWR Applies over all operating conditions Gain Power-Added Efficiency (1) Load mismatch stress with no permanent degradation or failure dB dBc dBc dBm/Hz 869 MHz to 894 MHz Notes: (1) ACLR and Efficiency measured at 832 MHz. 4 COMMENTS Data Sheet - Rev 2.5 03/2012 POUT 27.2 dBm ALT6705 Table 5: Electrical Specifications - WCDMA Operation (R99 Modulation) (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system) MIN TYP MAX UNIT 26 16 10 29 19 13.5 32 22 16 ACLR1 at 5 MHz offset (1) - -41 -42 -40 ACLR2 at 10 MHz offset 36 23 16 - PARAMETER Gain Power-Added Efficiency (1) Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure POUT VMODE1 VMODE2 dB POUT = +28.4 dBm POUT = +17 dBm POUT = +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -37 -37 -37 dBc POUT = +28.4 dBm POUT = +17 dBm POUT = +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -57 -58 -59 -48 -48 -48 dBc POUT = +28.4 dBm POUT = +17 dBm POUT = +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V 40 27 18 20 11 - % POUT = +28.4 dBm POUT = +17 dBm POUT = +13.5 dBm POUT = +8 dBm POUT = +3.5 dBm 0V 1.8 V 1.8 V 1.8 V 1.8 V 0V 0V 0V 1.8 V 1.8 V - - -70 dBc 8:1 - - VSWR Notes: (1) ACLR and Efficiency measured at 832 MHz. 5 COMMENTS Data Sheet - Rev 2.5 03/2012 POUT < +28.4 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions Applies over full operating range ALT6705 Table 6: Electrical Specifications - CDMA2000 Operation (RC-1 waveform) (TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX 26 16 10 29 19 13.5 32 22 16 Adjacent Channel Power at ±885 kHz offset (1) Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz - -50 -50 -50 -46.5 -46.5 -46.5 Adjacent Channel Power at ±1.98 MHz offset (1) Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz - -59 -60 -60 -56 -56 -56 33 20 13 37 23 17 - % - - -70 dBc 8:1 - - Gain Power-Added Efficiency (1) Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure UNIT dB dBc dBc POUT VMODE1 VMODE2 POUT = +27.7 dBm POUT = +16 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V POUT = +27.7 dBm POUT = +16 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V POUT = +27.7 dBm POUT = +16 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V POUT = +27.7 dBm POUT = +16 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V POUT < +27.7 dBm In-band Load VSWR < 5:1 Out-of-band Load VSWR < 10:1 Applies over all operating conditions VSWR Applies over all operating conditions Notes: (1) ACLR and Efficiency measured at 832 MHz. 6 COMMENTS Data Sheet - Rev 2.5 03/2012 ALT6705 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com to the VMODE voltages. The Bias Control table below lists the recommended modes of operation for various applications. Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VEN, VMODE1 and VMODE2 voltages. Three operating modes are recommended to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 17 dBm. At ~17dBm - 8 dBm, the PA should be “Mode Switched” to Medium Power Mode. For POUT levels < ~7 dBm, the PA can be switched to Low Power Mode for even lower quiescent current consumption. Bias Modes The power amplifier may be placed in either Low, Medium or High Bias modes by applying the appropriate logic level (see Operating Ranges table) Table 7: Bias Control APPLICATION POUT LEVELS BIAS MODE VEN VMODE1 VMODE2 VCC VBATT Low power (Low Bias Mode) +7 dBm Low +1.8 V +1.8 V +1.8 V 3.1 - 4.35 V > 3.1 V Med power (Medium Bias Mode) > 7 dBm +17 dBm Low +1.8 V +1.8 V 0V 3.1 - 4.35 V > 3.1 V High power (High Bias Mode) > +17 dBm High +1.8 V 0V 0V 3.1 - 4.35 V > 3.1 V - Shutdown 0V 0V 0V 3.1 - 4.35 V > 3.1 V Shutdown VBATT VCC C5 2.2 µF C1 C9 0.01 µF 100 pF GND at slug 1 2 RFIN VMODE2 VMODE1 VEN 3 VBATT VCC RFIN RFOUT 10 9 VMODE2 CPLIN 8 4 VMODE1 GND 7 5 VEN CPLOUT 6 Figure 3: Evaluation Board Schematic 7 Data Sheet - Rev 2.5 03/2012 C3 330 pF C2 C4 0.01 µF 2.2 µF ceramic RFOUT CPLIN CPLOUT ALT6705 Performance Data Plots: 35 FigureFigure 4: LTE Gain overTemperature Temperature 4: LTE Gain(dB) (dB) over (Vbatt=VCC=3.4V) (VBATT = VCC = 3.4 V) Figure LTE Gain (dB) overover Voltage Figure 5:5:LTE Gain (dB) Voltage (Tc=25C) (T C = 25 8C) 35 25C 3.2Vcc -30C 3.4Vcc 30 25C 3.4Vcc 30 25C 3.4Vcc 25C 4.2Vcc 25 25 20 20 Gain (dB) Gain (dB) 90C 3.4Vcc 15 10 15 10 5 5 0 0 5 10 15 20 25 0 30 0 Pout (dBm) 5 10 15 20 25 30 Pout (dBm) Figure 6: LTE PAE(%) (%) over Figure 6: LTE PAE overTemperature Temperature (Vbatt=VCC=3.4V) (VBATT = VCC = 3.4 V) 50 25C 3.2Vcc 25C 3.4Vcc 40 25C 3.4Vcc 50 90C 3.4Vcc 35 25C 4.2Vcc 40 30 Efficiency Efficiency (%) 60 -30 3.4cc 45 Figure 7: LTE PAE (%) Voltage Figure 7: LTE PAE (%)over over Voltage (TC(Tc=25C) = 25 8C) 25 20 15 10 30 20 10 5 0 0 0 5 10 15 20 25 30 0 5 10 -35 -35 -30C 3.4Vcc 30 Figure 9: LTE ACLR1 (dBc) over Voltage (Tc=25C) (TC = 25 8C) 25C 3.4Vcc -40 ACLR1 (5MHz dBc) -45 ACLR1 (5MHz dBc) 25 25C 3.2Vcc 25C 3.4Vcc 90C 3.4Vcc -50 -55 -60 -65 25C 4.2Vcc -45 -50 -55 -60 -70 0 8 20 Figure 9: LTE ACLR1 (dBc) over Voltage Figure 8:Figure LTE8: ACLR1 over Temperature LTE ACRL1(dBc) (dBc) over Temperature (Vbatt=VCC=3.4V) (VBATT = VCC = 3.4 V) -40 15 Pout (dBm) Pout (dBm) 5 10 15 Pout (dBm) 20 25 30 -65 0 Data Sheet - Rev 2.5 03/2012 5 10 15 Pout (dBm) 20 25 30 ALT6705 PACKAGE OUTLINE Figure 10: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Date Code (YYWW) 6705R LLLLNN YYWWCC Part Number Lot Number Country Code(CC) Figure 11: Branding Specification - M45 Package 9 Data Sheet - Rev 2.5 03/2012 ALT6705 PCB AND STENCIL DESIGN GUIDELINE Figure 12: Recommended PCB Layout Information 10 Data Sheet - Rev 2.5 03/2012 ALT6705 COMPONENT PACKAGING Pin 1 Figure 13: Carrier Tape Figure 14: Reel 11 Data Sheet - Rev 2.5 03/2012 ALT6705 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION ALT6705RM45Q7 -40 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module ALT6705RM45P9 -40 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Partial Tape and Reel Surface Mount Module COMPONENT PACKAGING ANADIGICS 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 Data Sheet - Rev 2.5 03/2012