Analog Power AM3599C N & P-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.063 @ VGS = 10V 0.090 @ VGS = 4.5V 0.112 @ VGS = -10V 0.172 @ VGS = -4.5V 30 -30 TSOP-6 Top View 3.7 3.1 -2.7 -2.2 D1 G1 1 6 D1 S2 G2 2 3 5 4 S1 D2 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol N-Channel P-Channe l Units Parame ter Drain-Source Voltage 30 -30 VDS V Gate-Source Voltage ±20 ±20 VGS o TA=25 C a Continuous Drain Current o TA=70 C b ID IDM Pulsed Drain Current a IS Continuous Source Current (Diode Conduction) o TA=25 C a Power Dissipation o TA=70 C -2.7 2.9 -2.1 8 -8 1.05 -1.05 A A 1.15 PD W 0.7 TJ, Tstg Operating Junction and Storage Temperature Range 3.7 o C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t <= 10 sec Steady State RthJA N-Channel Typ Max P-Channel Typ Max Unit 93 130 93 130 o 110 150 110 150 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM3599_F Analog Power AM3599C SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Ch VGS = VDS, ID = 250 uA VGS = VDS, ID = -250 uA VDS = 0 V, VGS = 20 V VDS = 0 V, VGS = -20 V N P N Limits Min Typ Max Unit Static VGS(th) Gate-Threshold Voltage Gate-Body Leakage Current IGSS Zero Gate Voltage Drain Current IDSS A ID(on) On-State Drain Current A Drain-Source On-Resistance A Forward Tranconductance A Diode Forward Voltage rDS(on) gfs VSD b 1 -1 P N P VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V 1.6 -1.6 4.5nA 2.5 -2.5 100 -4.5nA 12nA -12nA -100 1 -1 o N 10 o P -10 VDS = 24 V, VGS = 0 V, T J = 55 C VDS = -24 V, VGS = 0 V, TJ = 55 C VDS = 5 V, VGS = 10 V VDS = -5 V, VGS = -10 V VGS = 10 V, ID = 3.7 A VGS = -10 V, ID = 3.1 A VGS = 4.5 V, ID = 2.7 A VGS = -4.5 V, ID = -2.2 A VDS = 5 V, ID = 3.7 A N 5 P N P N P N -5 V uA uA uA A 0.057 0.100 0.075 0.148 10 VDS = -5 V, ID = 3.1 A P 5 IS = 1.05 A, VGS = 0 V N 0.80 IS = -1.05 A, VGS = 0 V P -0.83 N P N P N P N P N P N P N P N P N P N P 2.2 3.8 0.5 0.6 0.8 1.5 184 378 62 126 30 52 5 5 12 15 13 20 7 20 0.063 0.112 0.090 0.172 Ω S S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall-Time tr td(off) tf N-Channel VDS=15V, VGS=4.5V, ID=2.7A P-Channel VDS=-15V, VGS=-4.5V, ID=-3.1A N-Channel VDS = 15 V, VGS = 0 V, f = 1MHz P-Channel VDS=-15V, VGS=0V, f=1MHz N-Chaneel VDD=15V, VGS=4.5V, ID=1A , RGEN=15Ω, P-Channel VDD=-15V, VGS=-4.5V, ID=-1A RGEN=15Ω 5 8 1 2 2 3 400 800 200 300 200 300 10 10 30 30 30 40 20 40 nC pF nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM3599_F Analog Power AM3599C Typical Electrical Characteristics (N-Channel) 30 15 VGS = 10V 25oC ID -Drain Current (A) 12 4.0V 18 12 6 3.0V 125oC 9 6 3 0 0 0 1 2 3 4 5 1 2 3 VDS - Drain-to-Source Voltage (V) 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics C - Capacitance (pF) 400 4 3 2 4.5V 10V 1 300 CISS 200 COSS 100 CRSS 0 0 6 12 18 24 0 30 0 ID - Drain Current (A) 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance rDS(ON) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage ( V ) rDS(ON) - Normalized On-Resistance ID - Drain Current (A) TA = -55oC 4.5V 24 8 6 4 2 1.6 VGS = 10V 1.4 1.2 1 0.8 0.6 0 -50 0 1 2 3 4 -25 5 0 25 50 75 100 125 TJ - Junction Temperature (oC) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 3 PRELIMINARY Publication Order Number: DS-AM3599_F 150 Analog Power AM3599C Typical Electrical Characteristics (N-Channel) 10 rDS(ON) - On-Resistance (OHM) IS - Source CURRENT (A 0.2 1 TA = 125oC 25oC 0.1 0.01 0.15 0.1 0.05 0 2 4 0.001 6 8 10 VGS - Gate-to-Source Voltage (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 30 1.5 ID = 250µA Power (W) 20 1.1 0.9 10 0.7 0 0.5 0.01 -50 -25 0 25 50 75 100 125 0.1 1 150 10 Time (sec) TJ - Temperature (oC) 1 Threshold Voltage Single Pulse Power D =0.5 RθJA (t) = r(t) * RθJA 0.2 0.1 Impedance Normalized Effective Transient Thermal VGS(th) Variance(V) 1.3 RθJA = 125 °C/W 0.1 0.05 P(pk 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 PRELIMINARY Publication Order Number: DS-AM3599_F 100 Analog Power AM3599C Typical Electrical Characteristics (P-Channel) 5 5 VGS=-10V T A = -55oC -4.5V 25oC 4 ID - Drain Current (A) ID - Drain Current (A) 4 3 2 -3.0V 1 125oC 3 2 1 0 0 0 0.5 1 1.5 2 2.5 1.5 2 2.5 V DS - Drain-to-Source Voltage (V) 3 3.5 4 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 800 C - Capacitance (pF) rDS(ON), Normalized ON-Resistance 2.5 2.0 -4.5V 1.5 600 CISS 400 COSS 200 -10V 1.0 CRSS 0 0 0.5 0 1 2 3 4 6 5 12 On-Resistance vs. Drain Current 24 30 Capacitance 1.6 rDS(ON) - On-Resistance (Normalized) -10 VGS - Gate-to-Source Voltage ( V 18 VDS - Drai n-to-Source Vol tage (V) ID - Drain Current (A) -8 -6 -4 -2 VGS = -10V 1.4 1.2 1 0.8 0.6 0 0 2 4 6 8 10 -50 12 -25 0 25 50 75 100 125 o TJ - Junction Temperature ( C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 5 PRELIMINARY Publication Order Number: DS-AM3599_F 150 Analog Power AM3599C Typical Electrical Characteristics (P-Channel) 0.4 rDS(ON) - On-Resistance (OHM) 10 IS - Source Current (A) 1 T A = 125oC 0.1 25oC 0.01 0.001 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 0.3 0.2 0.1 0 1.2 2 4 V SD, - Source-to-Drain Voltage (V) 6 8 10 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 30 2.2 ID = -250µA 20 Power (W) V GS(th) Variance (V) 2 1.8 1.6 10 1.4 0 1.2 -50 -25 0 25 50 75 100 125 0.01 150 0.1 1 Threshold Voltage Single Pulse Power D =0.5 RθJA (t) = r(t) * RθJA 0.2 0.1 Impedance Normalized Effective Transient Thermal 1 10 Time (sec) o TJ - Temperature ( C) RθJA = 125 °C/W 0.1 0.05 P(pk 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 6 PRELIMINARY Publication Order Number: DS-AM3599_F 100 Analog Power AM3599C Package Information TSOP-6: 6LEAD 7 PRELIMINARY Publication Order Number: DS-AM3599_F