Analog Power AM4531C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 -26.5 ID (A) 82 @ VGS = 2.5V 58 @ VGS = 4.5V 172 @ VGS = -2.5V 112 @ VGS = -4.5V Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology 4.2 5.0 -2.9 -3.6 1 8 2 7 3 6 4 5 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol N-Channel P-Channel Units Parameter 30 -26.5 Drain-Source Voltage VDS V VGS ±12 ±12 Gate-Source Voltage o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) 5.0 -3.6 4.1 -6.8 IDM 20 -20 IS 1.3 -1.3 2.1 2.1 1.3 1.3 ID o TA=25 C a Power Dissipation o TA=70 C PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Steady-State A W o -55 to 150 Symbol t <= 10 sec A RθJA Maximum C Units 62.5 o 110 o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4531_E Analog Power AM4531C o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Ch Min Typ Max Unit Static Gate-Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current On-State Drain Current VGS(th) A Drain-Source On-ResistanceA Forward TranconductanceA IDSS ID(on) rDS(on) gfs VGS = VDS , I D = 250 uA N 0.6 VGS = VDS , I D = -250 uA VGS = -12 V, VDS = 0 V VGS = 12 V, VDS = 0 V VDS = -24 V, VGS = 0 V VDS = 24 V, VGS = 0 V VDS = 5 V, VGS = 4.5 V VDS = -5 V, VGS = -4.5 V VGS = 4.5 V, I D = 5.0 A VGS = 2.5 V, I D = 4.2 A VGS = -4.5 V, I D = -3.6 A VGS = -2.5 V, I D = -2.9 A VDS = 15 V, I D = 5.0 A VDS = -15 V, I D = -3.6 A P P N P N N P -0.6 N P 25 10 N-Channel VDS=15V, VGS=4.5V, I D=5.0A P-Channel VDS =-15V, VGS =-4.5V, I D=-3.6A N P N P N 6.3 10 0.9 2.2 1.9 P 1.7 N P N P N P N P 7.4 7.6 4 6.8 22.2 33.6 3.6 23.2 V ±100 ±100 -1 1 20 -20 nA uA A 58 82 112 172 N P mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time td(on) tr td(off) tf N-Chaneel VDD =15V, VGS =4.5V, I D=1A , RGE N =6Ω, P-Channel VDD=-15V, VGS =-4.5V, I D=-1A RGEN=6Ω nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM4531_E Analog Power AM4531C Typical Electrical Characteristics (N-Channel) 20 30 TA = -55oC 25oC 25 15 ID - Drain Current (A) ID - Drain Current (A) 4.5V 2.5V 10 5 125oC 20 15 10 5 0 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 1 1.5 2 VDS - Drain-to-Source Voltage (V) Output Characteristics 3.5 2400 2000 C - Capacitance (pF) rDS(ON) - Normalized On-Resistance 3 Transfer Characteristics 1.4 1.2 4.5V 1 1600 CISS 1200 800 400 10V C OSS C RSS 0 0.8 0 5 10 15 20 0 25 5 10 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance r DS(ON) - On-Resistance (Normalized) 10 8 Vgs Voltage ( V ) 2.5 VGS - Gate-to-Source Voltage (V) 6 4 2 1.6 VGS = 4.5V 1.4 1.2 1 0.8 0.6 0 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (oC) Gate charge ( nC ) Gate Charge On-Resistance vs. Junction Temperature 3 PRELIMINARY Publication Order Number: DS-AM4531_E 150 Analog Power AM4531C Typical Electrical Characteristics (N-Channel) 100 0.07 rDS(ON) - On-Resistance (OHM) IS - Source CURRENT (A 10 TA = 125oC 1 o 25 C 0.1 0.01 0.001 0.06 0.05 0.04 0.03 0.02 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 0.01 1.4 2 VSD - Source-to-DrainVoltage (V) 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 30 1.8 ID = 250µA 20 Power (W) 1.4 1.2 1 0.8 10 0.6 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 0.01 150 0.1 1 TJ - Temperature (oC) 1 10 Time (sec) Threshold Voltage Single Pulse Power D =0.5 RθJA (t) = r(t) * RθJA 0.2 0.1 Impedance Normalized Effective Transient Thermal VGS(th) - Variance (V) 1.6 RθJA = 125 °C/W 0.1 0.05 P(pk 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 PRELIMINARY Publication Order Number: DS-AM4531_E 100 Analog Power AM4531C Typical Electrical Characteristics (P-Channel) 6 5 VGS =- 4.5V 4 3 -2.0V 2 -1.8V 4 o 125 C 3 2 1 1 0 0 0 0.5 1 1.5 2 0.5 2.5 1 1.5 2 2.5 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Soruce Voltage (V) Output Characteristics Transfer Characteristics 600 2.75 2.5 C - Capacitance (pF) 500 2.25 2 1.75 -2.5V 1.5 1.25 400 C ISS 300 200 C OSS 100 -4.5V 1 CRSS 0 0.75 0 1 2 3 4 5 0 6 5 10 15 20 VDS - Drain-to- Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance rDS(ON), - On-Resistance (Normalized) -10 -8 Vgs Voltage ( V ) rDS(ON) - Normalized On-Resistance 25oC TA = -55oC -2.5V ID - Drain Current (A) ID - Drain Current (A) 5 -6 -4 -2 1.6 VGS = -4.5V 1.4 1.2 1 0.8 0.6 0 0 3 6 9 12 15 -50 0 25 50 75 100 125 TJ - Junction Temperature (oC) Qg, Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 5 PRELIMINARY -25 Publication Order Number: DS-AM4531_E 150 Analog Power AM4531C Typical Electrical Characteristics (P-Channel) 0.4 rDS(ON) - On-Resistance (OHM) 100 TA = 125oC 1 25oC 0.1 0.01 0.001 0.3 0.25 0.2 0.15 0.1 0.05 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1 1.4 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 10 1.3 8 ID =- 250µA Power (W) 1.2 VGS(th) Variance (V) 1.1 1 0.9 6 4 0.8 2 0.7 0.6 -50 -25 0 25 50 75 100 125 0 150 0.01 0.1 TJ, - Temperature (oC) 1 10 100 1000 Time (sec) Threshold Voltage Single Pulse Power 1 D = 0.5 R θJA(t) = r(t) + R θJA Normailized Effective Transient Thermal Impedance IS - Source Current (A) 10 0.35 R θJA = 130 oC/W 0.2 0.1 0.1 0.05 P(pk) TJ - TA = P * R θJA(t) 0.02 Duty Cycle, D = t1 / t2 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 6 PRELIMINARY Publication Order Number: DS-AM4531_E Analog Power AM4531C Package Information SO-8: 8LEAD H x 45° 7 PRELIMINARY Publication Order Number: DS-AM4531_E