Analog Power AM1331P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCTSUMMARY VDS (V) rDS(on) (OHM) 0.112 @ VGS = -10V -30 0.172 @ VGS = -4.5V Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SC70-3 saves board space Fast switching speed High performance trench technology ID (A) -1.5 -1.2 G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS Drain-Source Voltage -30 V ±20 Gate-Source Voltage VGS o TA=25 C a Continuous Drain Current o ID TA=70 C b -1.2 IDM Pulsed Drain Current a IS Continuous Source Current (Diode Conduction) o TA=25 C a Power Dissipation o PD TA=70 C Operating Junction and Storage Temperature Range -1.5 A -2.5 ±0.28 0.34 A W 0.22 TJ, Tstg -55 to 150 o C THERMAL RESISTANCE RATINGS Parameter a MaximumJunction-to-Ambient Symbol t <= 5 sec Steady-State RTHJA Maximum 375 430 Units o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM1331_B Analog Power AM1331P o SPECIFICATIONS (TA = 25 CUNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = -250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current A On-State Drain Current ID(on) A Drain-Source On-Resistance A Forward Tranconductance Diode Forward Voltage IDSS rDS(on) -1 VDS = 0 V, VGS = ±20 V ±100 VDS = -24 V, VGS = 0 V -1 -10 o VDS = -24 V, VGS = 0 V, TJ = 55 C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -1.5 A VGS = -4.5 V, ID = -1.2 A gfs VSD VDS = -5 V, ID = -1.5 A IS = -0.46 A, VGS = 0 V -5 V nA uA A 112 172 9 -0.65 mΩ S V b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. b. c. Qg Qgs Qgd td(on) tr td(off) tf VDS = -10 V, VGS = -5 V, ID = -1.5 A VDD = -10 V, IL = -1 A, VGEN = -4.5 V, RG = 6 Ω 7.2 1.7 1.5 10 9 27 11 nC ns Pulse test: PW <= 300us duty cycle <= 2%. Guaranteed by design, not subject to production testing. Repetitive rating, pulse width limited by junction temperature. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM1331_B Analog Power AM1331P Typical Electrical Characteristics (P-Channel) 5 5 VGS=-10V o -4.5V T A = -55 C 25oC 4 ID - Drain Current (A) ID - Drain Current (A) 4 3 2 -3.0V 1 o 125 C 3 2 1 0 0 0 0.5 1 1.5 2 2.5 1.5 2 2.5 V DS - Drain-to-Source Voltage (V) 3 3.5 4 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 800 C - Capacitance (pF) rDS(ON), Normalized ON-Resistance 2.5 2.0 -4.5V 1.5 600 CISS 400 COSS 200 -10V 1.0 CRSS 0 0.5 0 0 1 2 3 4 6 5 12 On-Resistance vs. Drain Current 24 30 Capacitance 1.6 rDS(ON) - On-Resistance (Normalized) -10 VGS - Gate-to-Source Voltage ( V ) 18 VDS - Drai n-to-Source Vol tage (V) ID - Drain Current (A) -8 -6 -4 -2 VGS = -10V 1.4 1.2 1 0.8 0.6 0 0 2 4 6 8 10 -50 12 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 3 PRELIMINARY Publication Order Number: DS-AM1331_B Analog Power AM1331P Typical Electrical Characteristics (P-Channel) 0.4 rDS(ON) - On-Resistance (OHM) IS - Source Current (A) 10 1 o TA = 125 C 0.1 25oC 0.01 0.001 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 0.3 0.2 0.1 0 1.2 2 4 VSD, - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 30 2.2 ID = -250µA 20 Power (W) VGS(th) Variance (V) 2 1.8 1.6 10 1.4 0 1.2 -50 -25 0 25 50 75 100 125 0.01 150 0.1 1 10 Time (sec) o TJ - Temperature ( C) Threshold Voltage Single Pulse Power D =0.5 RθJ A(t) = r(t) * RθJA 0.2 0.1 Impedance Normalized Effective Transient Thermal 1 RθJA = 125 °C/W 0.1 0.05 P(pk 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 PRELIMINARY Publication Order Number: DS-AM1331_B 100 Analog Power AM1331P Package Information 5 PRELIMINARY Publication Order Number: DS-AM1331_B