Analog Power AM4542C P & N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) ID (A) 27 @ VGS = 4.5V 22 @ VGS = 10V 40 @ VGS = -4.5V 30 @ VGS = -10V 40 -40 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology 7.3 8.3 -6.2 -7.6 1 8 2 7 3 6 4 5 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol N-Channel P-Channel Units Parameter 40 -40 Drain-Source Voltage VDS V VGS 20 -20 Gate-Source Voltage o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) 8.3 -7.6 6.8 -6.3 IDM ±50 ±50 IS 2.3 -2.1 2.1 2.1 1.3 1.3 ID o TA=25 C a Power Dissipation o TA=70 C PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Steady-State A W o -55 to 150 Symbol t <= 10 sec A RθJA Maximum C Units 62.5 o 110 o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4542_D Analog Power AM4542C SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Limits Min Typ Max Unit Test Conditions Ch VGS = VDS, ID = 250 uA N 1 1.5 3 VGS = VDS, ID = -250 uA VGS = -20 V, VDS = 0 V VGS = 20 V, VDS = 0 V VDS = -32 V, VGS = 0 V VDS = 32 V, VGS = 0 V VDS = 5 V, VGS = 10 V VDS = -5 V, VGS = -10 V VGS = 10 V, ID = 8.3 A VGS = 4.5 V, ID = 7.3 A VGS = -10 V, ID = -7.6 A VGS = -4.5 V, ID = -6.2 A VDS = 15 V, ID = 8.3 A VDS = -15 V, ID = -7.6 A P P N P N N P -1 -1.4 7 6 12nA 2nA -3 ±100 ±100 -1 1 22 27 30 40 N P 14 17 28 35 40 31 N-Channel VDS=15V, VGS=4.5V, ID=8.3A P-Channel VDS=-15V, VGS=-4.5V, ID=-7.6A N P N P N 13 14 3.3 5.8 4.5 30 30 7 12 10 N-Channel VDS=15V, VGS=0V, f=1MHz P-Channel VDS=-15V, VGS=0V, f=1MHz P N P N P N 12 1317 1583 272 278 169 30 3000 4000 600 600 400 P 183 20 15 9 16 70 62 20 46 400 40 30 20 40 200 200 40 100 Static VGS(th) Gate-Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current A ID(on) A Drain-Source On-Resistance Forward Tranconductance A rDS(on) gfs N P 25 -50 V nA uA A mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall-Time tr td(off) tf N-Chaneel VDD=15V, VGS=10V, ID=1A , RGEN=25Ω, P-Channel VDD=-15V, VGS=-10V, ID=-1A RGEN=15Ω N P N P N P N P nC pF nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM4542_D Analog Power AM4542C Typical Electrical Characteristics (N-Channel) 80 60 70 IDS Drain Current (A) ID Drain Current (A) 4.5V through 10V 50 3.5V 40 30 3V 20 60 50 40 30 20 10 10 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 1 2 3 4 5 6 VGS Gate to Source Voltage (V) VDS(V) Output Characteristics Transfer Characteristics 2000 0.035 1800 Capacitance (pF) RDS(ON) resistance ( Ω) 2200 0.04 0.03 4.5V 0.025 6V 0.02 0.015 10V 0.01 Ciss 1600 1400 1200 1000 Coss 800 600 400 Crs 200 0.005 0 0 0 0 10 20 30 40 50 5 60 On Resistance vs. Drain Current 1.8 VD= 15V ID= 10A VGS = 10V r DS(ON) - On-Resistance (Ohm) (Normalized) 8 VGS (V) 20 Capacitance 10 6 4 2 0 5 10 15 20 25 1.6 1.4 1.2 1 0.8 0.6 30 -50 QG, Total Gate Charge (nC) Gate Charge -25 0 25 50 75 100 o T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 3 PRELIMINARY 15 VDS (V) ID Drain Current (A) 0 10 Publication Order Number: DS-AM4542_D 125 150 Analog Power AM4542C Typical Electrical Characteristics (N-Channel) 0.02 RDS(ON) Resistance (Ω) IS - Source CURRENT (A) Id=10A 0.019 100 10 1 T A = 125oC 0.1 25oC 0.01 0.001 0.018 0.017 0.016 0.015 0.014 0.013 0.012 0.011 0.01 0.0001 0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 1 1.2 0 2 4 6 8 10 VGS Gate to Source Voltage(V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 P(pk), PEAK TRANSIENT POWER (W) 4.7 ID = 250µA 4.5 V GS(th) Variance (V) 4.3 4.1 3.9 3.7 3.5 3.3 3.1 2.9 2.7 -50 -25 0 25 50 75 100 125 150 SINGLE PULSE RqJA = 125oC/W TA = 25oC 40 30 20 10 0 TJ - Temperature ( C) 0.001 0.1 1 t1, TIME (SEC) Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation o 0.01 10 100 Normalized Thermal Transient Junction to Ambient 1 D = 0.5 0.2 0.1 0.1 Rq J A (t) = r(t) + Rq J A Rq J A = 1 2 5 o C/W 0.0 P(p k) 0.02 0.01 t1 t2 0.01 TJ - TA = P * Rq J A(t ) Duty Cycle, D = t1 / t2 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 t1, TIM E (s e c ) 1 10 100 1000 Figure 11. Transient Thermal Response Curve 4 PRELIMINARY Publication Order Number: DS-AM4542_D Analog Power AM4542C Typical Electrical Characteristics (P-Channel) 60 60 4.5V 6V through 10V 50 4V ID Drain Current (A) IDS Drain Current (A) 50 40 40 20 25C 30 3.5V 30 20 3V 10 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 1 2 3 4 5 6 VGS Gate to Source Voltage (V) VDS(V) Output Characteristics Transfer Characteristics 2400 0.1 Ciss 2000 0.08 0.07 Capacitance (pF) RDS(ON) resistance ( Ω) 2200 4.5V 0.09 6V 0.06 0.05 10V 0.04 0.03 1800 1600 1400 1200 1000 Coss 800 600 400 0.02 Crs 200 0.01 0 0 0 0 10 20 30 40 50 5 60 10 15 20 VDS (V) ID Drain Current (A) On Resistance Vs Vgs Voltage Capacitance 1.6 10 VD= 10V ID= 10A VGS = - 10V rDS(ON) - On-Resistance (Ohm) (Normalized) 1.5 1.4 8 VGS (V) 1.3 6 1.2 1.1 4 1 0.9 2 0.8 0.7 0 0.6 0 5 10 15 20 25 30 -50 QG, Total Gate Charge (nC) 0 25 50 75 100 125 o TJ - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature 5 PRELIMINARY -25 Publication Order Number: DS-AM4542_D 150 Analog Power AM4542C Typical Electrical Characteristics (P-Channel) 0.1 RDS(ON) Resistance (Ω) 0.09 100 IS - Source Current (A) 10 T A = 125oC 1 25oC 0.1 0.01 0.001 Id=10A 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.0001 0 0.2 0.4 0.6 0.8 1 0 1.2 V SD - Source-to-Drain Voltage (V) 2 4 6 8 10 VGS Gate to Source Voltage(V) Source-Drain Diode Forward Voltage On-Resistance with Gate to Source Voltage P(pk), PEAK TRANSIENT POWER (W) 50 2 ID = -250µA 1.9 V GS(th) Variance (V) 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 -50 -25 0 25 50 75 100 125 150 SINGLE PULSE RqJA = 125C/W TA = 25C 40 30 20 10 0 0.001 o 0.01 0.1 1 10 100 1000 TJ - Temperature ( C) t1, TIME (sec) Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 0.1 D =0.5 0.2 Rq J A(t) = r(t) + Rq J A Rq J A = 1 2 5 o C/W 0.1 0.05 P (pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * Rq J A(t) Duty Cycle, D = t1 / t2 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , TIM E (s ec) Figure 11. Transient Thermal Response Curve 6 PRELIMINARY Publication Order Number: DS-AM4542_D Analog Power AM4542C Package Information SO-8: 8LEAD H x 45° 7 PRELIMINARY Publication Order Number: DS-AM4542_D