AM40P04-20DE Analog Power P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 @ VGS = -10V -40 40 @ VGS = -4.5V ID (A) 36 29 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter Drain-Source Voltage -40 VDS V Gate-Source Voltage ±20 VGS a o TA=25 C ID Continuous Drain Current b Pulsed Drain Current Continuous Source Current (Diode Conduction) a a IDM ±40 IS -30 o TA=25 C P D Power Dissipation THERMAL RESISTANCE RATINGS Parameter Symbol a A A W 50 o C TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Maximum Junction-to-Case 36 RθJA RθJC Maximum Units 50 o 3.0 o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM40P04-20DE_A AM40P04-20DE Analog Power SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = -250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A IDSS ID(on) A Drain-Source On-Resistance A Forward Tranconductance Diode Forward Voltage rDS(on) gfs VSD -1 VDS = 0 V, VGS = ±25 V ±100 nA VDS = -24 V, VGS = 0 V -1 -5 uA o VDS = -24 V, VGS = 0 V, TJ = 55 C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -36 A VGS = -4.5 V, ID = -29 A -41 A 30 40 VDS = -15 V, ID = -36 A IS = -41 A, VGS = 0 V mΩ 31 -0.7 S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss 13.9 5.2 5.8 1583 278 183 VDS = -15 V, VGS = -4.5 V, ID = -36 A VDS = -15 V, VGS = 0 V, f = 1MHz 30 20 20 4000 600 400 nC pF Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time td(on) tr td(off) tf VDD = -15 V, RL = 15 Ω , ID = -41 A, VGEN = -10 V, RG = 6Ω 15 12 62 46 nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM40P04-20DE_A AM40P04-20DE Analog Power Typical Electrical Characteristics 60 60 4.5V 6V through 10V 50 4V ID Drain Current (A) IDS Drain Current (A) 50 40 40 20 25C 30 3.5V 30 20 3V 10 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 1 2 3 4 5 6 VGS Gate to Source Voltage (V) VDS(V) Output Characteristics Transfer Characteristics 2400 0.1 Ciss 2000 0.08 0.07 Capacitance (pF) RDS(ON) resistance ( Ω) 2200 4.5V 0.09 6V 0.06 0.05 10V 0.04 0.03 1800 1600 1400 1200 1000 Coss 800 600 400 0.02 Crs 200 0.01 0 0 0 0 10 20 30 40 50 5 60 10 15 20 VDS (V) ID Drain Current (A) On Resistance Vs Vgs Voltage Capacitance 1.6 10 VD= 10V ID= 10A VGS = - 10V rDS(ON) - On-Resistance (Ohm) (Normalized) 1.5 1.4 8 VGS (V) 1.3 1.2 6 1.1 4 1 0.9 2 0.8 0.7 0 0.6 0 5 10 15 20 25 30 -50 QG, Total Gate Charge (nC) 0 25 50 75 100 125 o TJ - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature 3 PRELIMINARY -25 Publication Order Number: DS-AM40P04-20DE_A 150 AM40P04-20DE Analog Power Typical Electrical Characteristics 0.1 0.09 RDS(ON) Resistance (Ω) 100 IS - Source Current (A) 10 T A = 125oC 1 25oC 0.1 0.01 0.001 Id=10A 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 0 V SD - Source-to-Drain Voltage (V) 2 4 6 8 10 VGS Gate to Source Voltage(V) Source-Drain Diode Forward Voltage On-Resistance with Gate to Source Voltage 2 P(pk), PEAK TRANSIENT POWER (W) 50 ID = -250µA 1.9 V GS(th) Variance (V) 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 -50 -25 0 25 50 75 100 125 150 o SINGLE PULSE RqJA = 125C/W TA = 25C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature ( C) t1, TIME (sec) Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 0.1 D =0.5 0.2 Rq J A(t) = r(t) + Rq J A Rq J A = 1 2 5 o C/W 0.1 0.05 P (pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * Rq J A(t) Duty Cycle, D = t1 / t2 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , TIM E (s ec) Figure 11. Transient Thermal Response Curve 4 PRELIMINARY Publication Order Number: DS-AM40P04-20DE_A AM40P04-20DE Analog Power Package Information 5 PRELIMINARY Publication Order Number: DS-AM40P04-20DE_A