ANALOGPOWER AM2327P

Analog Power
AM2327P
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
•
Miniature SOT-23 Surface Mount Package
Saves Board Space
•
Fast switching speed
•
High performance trench technology
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
0.052 @ VGS = -4.5V
-20
0.072 @ VGS = -2.5V
ID (A)
-3.6
-3.1
0.120 @ VGS = -1.8V
-2.7
G
D
S
o
ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings Units
-20
Drain-Source Voltage
VDS
V
VGS
Gate-Source Voltage
±8
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
ID
IDM
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
IS
o
TA=25 C
a
Power Dissipation
o
TA=70 C
Operating Junction and Storage Temperature Range
PD
-3.6
-1.8
A
-10
±0.46
1.25
0.8
TJ, Tstg -55 to 150
A
W
o
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t <= 5 sec
Steady-State
RTHJA
Maximum
100
150
Units
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2327_H
Analog Power
AM2327P
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
Limits
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
ID(on)
Drain-Source On-Resistance
Forward Tranconductance
IDSS
A
A
Diode Forward Voltage
rDS(on)
g fs
VSD
-0.7
VDS = 0 V, VGS = ±8 V
±100
nA
VDS = -16 V, VGS = 0 V
-1
-10
uA
VDS = -16 V, VGS = 0 V, T J = 55oC
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -3.6 A
VGS = -2.5 V, ID = -3.1 A
VGS = -1.8 V, ID = -2.7 A
-10
A
52
72
120
mΩ
VDS = -5 V, ID = -1.25 A
IS = -0.46 A, VGS = 0 V
12
-0.60
S
V
VDS = -5 V, VGS = -4.5 V,
ID = -2.4 A
12.0
2.0
2.0
nC
P-Channel VDS =-15V, VGS =0V, f=1MHz
1312
130
106
pF
VDD = -10 V, IL = -1 A,
VGEN = -4.5 V, RG = 6 Ω
6.5
20
31
21
ns
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
t d(on)
tr
td(off)
tf
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential
or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer
application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products
are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal
injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall
indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an
Equal Opportunity/Affirmative Action Employer.
2
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2327_H
Analog Power
AM2327P
Typical Electrical Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation
Figure 4. On-Resistance Variation with
with Temperature
Gate to Source Voltage
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 5. Transfer Characteristics
3
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2327_H
Analog Power
AM2327P
Typical Electrical Characteristics
Figure 7. Gate Charge Characteristic
Figure 8. Capacitance Characteristic
Figure 10. Single Pulse Maximum Power
Figure 9. Maximum Safe Operating Area
Dissipation
Normalized Thermal Transient Junction to Ambient
4
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2327_H
Analog Power
AM2327P
Package Information
5
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2327_H
Analog Power
AM2327P
Ordering information
• AM2327P-T1-XX
–
–
–
–
–
–
A:
M:
2327:
P:
T1:
XX:
Analog Power
MOSFET
Part number
P-Channel
Tape & reel
Blank:
Standard
PF:
Leadfree
6
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2327_H