AOSMD AO4240

AO4240
40V N-Channel MOSFET
General Description
Product Summary
The AO4240 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss. In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
VDS
40V
24A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 3.3mΩ
RDS(ON) (at VGS=4.5V)
< 4.3mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Units
V
±20
V
24
ID
TA=70°C
Maximum
40
19
A
170
IDM
Avalanche Current C
IAS
75
A
Avalanche energy L=0.1mH C
TA=25°C
EAS
281
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 0: Feb. 2012
3.1
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
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-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4240
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
170
100
nA
1.7
2.3
V
2.7
3.3
4
4.9
VGS=4.5V, ID=20A
3.4
4.3
mΩ
90
1
V
4.5
A
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
A
0.67
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
µA
5
Gate Threshold Voltage
Units
V
1
IGSS
Coss
Max
40
VDS=40V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=0V, VDS=20V, f=1MHz
mΩ
S
4245
pF
1170
pF
69
pF
1
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
62
87
nC
Qg(4.5V) Total Gate Charge
28
40
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
0.5
10.5
nC
8
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
74
VGS=10V, VDS=20V, RL=1.0Ω,
RGEN=3Ω
9
ns
11.5
ns
42
ns
21
ns
23
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Feb. 2012
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Page 2 of 6
AO4240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
4.5V
80
80
10V
60
ID(A)
ID (A)
60
3V
125°C
40
40
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
0
5
6
2
3
4
5
6
Normalized On-Resistance
1.8
5
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
VGS=4.5V
3
2
VGS=10V
1
VGS=10V
ID=20A
1.6
1.4
17
5
2
VGS=4.5V10
1.2
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
8
1.0E+02
ID=20A
1.0E+01
40
125°C
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
6
4
1.0E-01
1.0E-02
25°C
1.0E-03
2
25°C
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Feb. 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AO4240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=20V
ID=20A
5000
Capacitance (pF)
VGS (Volts)
8
6
4
2
4000
3000
Coss
2000
1000
0
Crss
0
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
70
0
1000
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
1000.0
TA=100°C
TA=25°C
100
TA=150°C
100.0
ID (Amps)
IAR (A) Peak Avalanche Current
Ciss
TA=125°C
RDS(ON)
limited
10µs
10.0
100µs
1.0
10
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
10s
DC
0.0
1
1
0.01
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0.1
1
VDS (Volts)
10
100
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 0: Feb. 2012
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Page 4 of 6
AO4240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Feb. 2012
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Page 5 of 6
AO4240
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Feb. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6