AO4892 100V Dual N-Channel MOSFET General Description Product Summary The AO4892 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 4A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 68mΩ RDS(ON) (at VGS=4.5V) < 94mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D2 D1 Bottom View Top View S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±20 V 4 ID TA=70°C Maximum 100 3 A Pulsed Drain Current C IDM Avalanche Current C IAS 4 A Avalanche energy L=0.1mH C TA=25°C EAS 0.8 mJ Power Dissipation B Junction and Storage Temperature Range Rev 0: Nov. 2012 2.0 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 25 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 6 AO4892 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 100 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 25 TJ=55°C TJ=125°C VGS=4.5V, ID=3A ±100 nA 2.35 2.8 V 56 68 104 126 74 94 A gFS Forward Transconductance VDS=5V, ID=4A 12.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.78 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz mΩ S V 2.5 A 415 pF 32 pF pF Ω 1.4 2.1 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6.5 12 nC Qg(4.5V) Total Gate Charge 3 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=50V, ID=4A 0.7 mΩ 1 3 VGS=0V, VDS=0V, f=1MHz Units µA 5 VGS=10V, ID=4A Static Drain-Source On-Resistance Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ 1.5 nC 1.5 nC 4 ns 2 ns 15 ns 2 ns 16 ns nC VGS=10V, VDS=50V, RL=12.5Ω, RGEN=3Ω IF=4A, dI/dt=500A/µs Body Diode Reverse Recovery Charge IF=4A, dI/dt=500A/µs 44 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Nov. 2012 www.aosmd.com Page 2 of 6 AO4892 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 10V VDS=5V 6V 20 4.5V 15 ID(A) ID (A) 15 10 10 3.5V 5 125°C 5 VGS=3.0V 25°C 0 0 0 1 2 3 4 1 5 100 3 4 5 Normalized On-Resistance 2.2 90 VGS=4.5V RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 70 60 VGS=10V 50 2 VGS=10V ID=4A 1.8 17 5 2 VGS=4.5V 10 1.6 1.4 1.2 ID=3A 1 0.8 40 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 180 1.0E+02 ID=4A 160 1.0E+01 40 1.0E+00 120 100 IS (A) RDS(ON) (mΩ Ω) 140 125°C 125°C 1.0E-01 1.0E-02 80 25°C 1.0E-03 60 1.0E-04 25°C 40 1.0E-05 20 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Nov. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4892 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 500 VDS=50V ID=4A 400 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 300 200 Coss 100 Crss 0 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 100.0 10µs 10.0 TA=25°C 10 100µs RDS(ON) limited ID (Amps) IAR (A) Peak Avalanche Current 100 20 1.0 1ms 10ms TA=125°C 0.1 TJ(Max)=150°C TA=25°C 10s DC 0.0 1 1 10 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0.01 100 0.1 1 10 VDS (Volts) 100 1000 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 0: Nov. 2012 www.aosmd.com Page 4 of 6 AO4892 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Nov. 2012 www.aosmd.com Page 5 of 6 AO4892 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Nov. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6