AO4476A 30V N-Channel MOSFET General Description Product Summary The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS 30V 15A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7.7mΩ RDS(ON) (at VGS = 4.5V) < 10.8mΩ 100% UIS Tested 100% Rg Tested D SOIC-8 D G G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±20 V 15 ID TA=70°C Maximum 30 12 A IDM 110 Avalanche Current C IAS, IAR 27 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 36 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev1: September 2010 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4476A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 110 100 nA 1.98 2.5 V 6.4 7.7 10 12 VGS=4.5V, ID=12A 8.6 10.8 mΩ 45 1 V 4 A VGS=10V, ID=15A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=15A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 IGSS Coss Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ A 0.74 mΩ S 920 1150 1380 pF VGS=0V, VDS=15V, f=1MHz 125 180 235 pF 60 105 150 pF VGS=0V, VDS=0V, f=1MHz 0.55 1.1 1.65 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 20 24 nC Qg(4.5V) Total Gate Charge 7.6 9.5 11.4 nC 2 2.7 3.2 nC 3 5 7 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=15A VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω 6.5 ns 2 ns 17 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=15A, dI/dt=500A/µs 7 3.5 8.7 10.5 ns Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs 11 13.5 16 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: September 2010 www.aosmd.com Page 2 of 6 AO4476A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 110 10V 100 5V VDS=5V 90 70 80 60 4V 60 ID(A) ID (A) 4.5V 6V 80 50 40 40 3.5V 30 125°C 10 VGS=3V 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 0.5 5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 10 Normalized On-Resistance 12 RDS(ON) (mΩ Ω) 25°C 20 20 VGS=4.5V 8 6 VGS=10V 4 2 VGS=10V ID=15A 1.6 1.4 17 5 VGS=4.5V ID=12A 2 10 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=15A 1.0E+01 20 40 15 125°C 10 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 1.0E-01 125°C 25°C 1.0E-02 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev1: September 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4476A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=15A 8 1400 Ciss Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 600 400 2 Coss 200 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 70 TA=25°C 60 100.0 50 TA=150°C TA=100°C 40 30 ID (Amps) IAR (A) Peak Avalanche Current Crss 0 0 10.0 10µs RDS(ON) limited 100µs 1ms 1.0 10ms 20 TA=125°C TJ(Max)=150°C TA=25°C 0.1 10 10s DC 0.0 0 0.01 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 100 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev1: September 2010 www.aosmd.com Page 4 of 6 AO4476A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev1: September 2010 www.aosmd.com Page 5 of 6 AO4476A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev1: September 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6