AO4722 30V N-Channel MOSFET SRFET General Description TM Product Summary TM VDS (V) = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 22mΩ (VGS = 4.5V) SRFET The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS 30 Gate-Source Voltage ±20 VGS TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C IDSM B Avalanche Current B Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation B TA=70°C 17 EAR PDSM Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Alpha & Omega Semiconductor, Ltd. 6.8 IAR TJ, TSTG t ≤ 10s 8.5 9.3 100 RθJA RθJL 43 A mJ 3.1 1.7 2.0 1.1 -55 to 150 Typ 32 60 17 Units V 11.6 IDM Junction and Storage Temperature Range Maximum Junction-to-Ambient A Steady State W °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4722 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 100 TJ=125°C VGS=10V, ID=11.6A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=9.3A gFS Forward Transconductance VDS=5V, ID=11.6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ 10 0.1 µA 1.65 2.5 V 11.5 14 17 21 17.5 22 mΩ 0.5 V 4 A A mΩ 28 0.43 903 VGS=0V, VDS=15V, f=1MHz mA S 1100 pF 225 pF 91 pF 1.7 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15.3 20 nC Qg(4.5V) Total Gate Charge 7.8 10 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=11.6A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=11.6A, dI/dt=300A/µs Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=1.3Ω, RGEN=3Ω IF=11.6A, dI/dt=300A/µs 2.0 nC 3.9 nC 5.0 ns 9.2 ns 17.8 ns 4.4 ns 17 20 30.0 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev2: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4722 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 VDS=5V 25 6V 20 60 ID(A) ID (A) 4.5V 40 15 4V 10 125° 20 25°C 5 VGS=3V 0 0 0 1 2 3 4 5 1 2 VDS (Volts) 25 5 Normalized On-Resistance 1.8 VGS=4.5V 20 RDS(ON) (mΩ ) 4 VGS(Volts) Figure 2: Transfer Characteristics DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 15 10 VGS=10V 5 ID=11.6A VGS=10V 1.6 1.4 ID=9.3A 1.2 VGS=4.5V 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 45 1.0E+02 40 1.0E+01 ID=11.6A 35 125°C 1.0E+00 30 IS (A) RDS(ON) (mΩ ) 3 125°C 25 25°C 1.0E-01 1.0E-02 20 1.0E-03 15 1.0E-04 10 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4722 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 VDS=15V ID=11.6A 1200 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1000 800 600 400 Coss 2 200 0 0 0 5 10 15 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 1000.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 100.0 TJ(Max)=150°C TA=25°C 80 RDS(ON) limited 10.0 10µs 100µ 1m 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 0.1 0.0 0.01 0.1 DC 1 VDS (Volts) Power (W) ID (Amps) Crss 1s 10s 10 60 40 20 0 0.0001 0.001 100 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.1 PD Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com