AO4446 30V N-Channel MOSFET General Description Product Summary The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use in PWM applications. VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A VGS TA=25°C Maximum 30 Units V ±20 V 15 TA=70°C ID 12 Pulsed Drain Current B IDM 40 Avalanche Current B IAR 20 A Repetitive avalanche energy L=0.1mH B EAR 50 mJ TA=25°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 3 PD TA=70°C -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 2.1 TJ, TSTG t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 33 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W AO4446 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 40 TJ=55°C VGS=10V, ID=15A TJ=125°C VGS=4.5V, ID=11A gFS Forward Transconductance VDS=5V, ID=15A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ 5 100 nA 2.2 3 V 6.9 8.5 11 13.5 11.8 14.5 mΩ 1 V 4 A A mΩ 27 0.71 1520 VGS=0V, VDS=15V, f=1MHz µA S 1825 pF 306 pF 214 pF 0.47 0.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 33.7 40 nC Qg(4.5V) Total Gate Charge 17 20 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=15A 6.2 nC 10 nC 7.2 ns 8.2 ns 22 ns 6.7 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=15A, dI/dt=100A/µs 24 Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=100A/µs 19 VGS=10V, VDS=15V, RL=1.0Ω, RGEN=3Ω Body Diode Reverse Recovery Time 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 3: Nov. 2010 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10V 30 60 5V 4.5V 25 50 VDS=5V VGS =4V 40 125°C ID(A) ID(A) 20 15 10 30 20 25°C VGS =3.5V 5 10 0 0 1 2 3 4 0 5 1.5 VDS(Volts) 2 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristics 2 Normalized On-Resistance 16 VGS=4.5V 14 RDS(ON) (mΩ ) 2.5 12 10 8 VGS=10V 6 1.8 VGS=10V ID=15A 1.6 1.4 1.2 VGS=4.5V ID=11A 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 1.0E+02 ID=15A 1.0E+01 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ ) 16 12 1.0E-01 25°C 1.0E-02 1.0E-03 8 1.0E-04 25°C 1.0E-05 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=15V ID=15A 2000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1500 1000 Coss 2 500 0 0 Crss 0 5 10 15 20 25 30 35 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100 10 30 80 RDS(ON) limited ID (Amps) 10 100µs 60 Power (W) 1ms 10ms TJ(Max)=150°C TA=25°C 10µs 0.1s 1s 1 10s TJ(Max)=150°C TA=25°C 20 DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 40 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000