AO4714 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.7mΩ (VGS = 10V) RDS(ON) < 6.7mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View TM SRFET Soft Recovery MOSFET: Integrated Schottky Diode D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current F Pulsed Drain Current B TA=25°C Power Dissipation ±20 V IDSM 16 IDM 100 Avalanche Current B B A W 2.0 IAR 30 A EAR 135 mJ -55 to 150 °C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. A 3.0 PDSM TA=70°C Repetitive avalanche energy L=0.3mH Units V 20 TA=70°C F Maximum 30 Symbol RθJA RθJL Typ 31 59 16 Max 41 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4714 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.2 VGS=10V, VDS=5V 100 TJ=125°C VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=16A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 20 VGS=0V, VDS=0V, f=1MHz 0.1 µA 2.2 V 3.9 4.7 5.9 7.3 5.4 6.7 mΩ 0.5 V 6 A A 90 0.36 4512 pF 314 pF SWITCHING PARAMETERS Qg(10V) Total Gate Charge 62 74 Qg(4.5V) Total Gate Charge 29 35 Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr pF 682 1.5 Qgs mΩ S 0.75 VGS=10V, VDS=15V, ID=20A mA 1.5 3760 VGS=0V, VDS=15V, f=1MHz Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ Ω nC 12 nC 12 nC 9.5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 8.5 ns 34 ns 9 ns IF=20A, dI/dt=300A/µs 18 Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 22 27 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The power dissipation and current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev3: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4714 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 30 10V 5V 175 4.5V 150 7V 6V 4V 20 ID(A) ID (A) 125 100 VDS=5V 25 3.5V 75 125° 15 10 50 25°C VGS=3V 5 25 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 Normalized On-Resistance 1.8 7 RDS(ON) (mΩ ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 8 6 VGS=4.5V 5 4 3 VGS=10V 2 VGS=10V 1.6 ID=20A 1.4 VGS=4.5V ID=16A 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 10 1.0E+02 ID=20A 1.0E+01 8 125°C 1.0E+00 IS (A) 125°C RDS(ON) (mΩ ) 2 6 1.0E-01 25°C 1.0E-02 1.0E-03 4 25°C 1.0E-04 1.0E-05 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4714 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12000 10 10000 VDS=15V ID=20A 6 Capacitance (pF) VGS (Volts) 8 4 6000 4000 Crss 2 2000 0 Coss 0 0 20 40 60 80 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 90 10µs 100.0 TJ(Max)=150°C TA=25°C 80 70 RDS(ON) limited Power (W) 100µ 10.0 1.0 5 100 TJ(Max)=150°C T A=25°C ID (Amps) Ciss 8000 1ms 0.1s 1s 10s 50 40 30 DC 0.1 60 20 10 0.0 0.1 1 10 100 VDS (Volts) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=41°C/W 0.01 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com