AO4442 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages from 4.5V to 25V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4442 is Pb-free (meets ROHS & Sony 259 specifications). AO4442L is a Green Product ordering option. AO4442 and AO4442L are electrically identical. VDS (V) = 75V ID = 3.1A (VGS = 10V) RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.5V) D S S S G D D D D G SOIC-8 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±25 V 20 2.5 W 1.6 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2.5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 3.1 TA=25°C Power Dissipation Maximum 75 RθJA RθJL Typ 38 69 24 Max 50 80 30 Units °C/W °C/W °C/W AO4442 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=10mA, VGS=0V 1 TJ=55°C 5 VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 nA 2.4 3 V 100 130 180 220 VGS=4.5V, ID=2A 120 165 VDS=5V, ID=3.1A 8.2 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge µA 100 VGS=10V, ID=3.1A Output Capacitance Units V VDS=60V, VGS=0V Gate-Body leakage current Coss Max 75 VGS(th) IS Typ A 0.79 303 mΩ mΩ S 1 V 10 A 350 pF VGS=0V, VDS=37.5V, f=1MHz 37 VGS=0V, VDS=0V, f=1MHz 2.2 3 Ω 5.2 6.5 nC 2.46 3.5 nC pF 17 VGS=10V, VDS=37.5V, ID=3.1A pF 1 nC Qgd Gate Drain Charge 1.34 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time 2.3 ns VGS=10V, VDS=37.5V, RL=12Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3.1A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs 22 15.6 ns 1.9 ns 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 1 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 7V 5V 6 4.5V 10 125°C ID(A) 15 VDS=5V 8 6V 20 ID (A) 10 10V 4 25°C VGS=4V 2 5 3.5V 0 0 0 1 2 3 4 2 5 2.5 2.2 200 2 Normalized On-Resistance 220 RDS(ON) (mΩ) 180 160 VGS=4.5V 140 120 VGS=10V 100 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=10V ID=3.1A 1.8 1.6 VGS=4.5V ID=2A 1.4 1.2 1 80 0 2 0.8 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 240 ID=3.1A 220 1.0E+00 200 1.0E-01 125°C 180 IS (A) RDS(ON) (mΩ) 25 160 125°C 1.0E-02 25°C 1.0E-03 140 120 1.0E-04 25°C 100 1.0E-05 80 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 10 Ciss 300 Capacitance (pF) VGS (Volts) 350 VDS=37.5V ID=3.1A 8 6 4 250 200 150 Coss 100 2 Crss 50 0 0 0 1 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 TJ(Max)=150°C, TA=25°C 10µs 100µs RDS(ON) limited 1ms 10ms 1.0 0.1s 1s 0.1 0.0 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TJ+PDM.ZθJA.RθJA RθJA=50°C/W 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note E) VDS (Volts) 10 20 10 DC 10s TJ(Max)=150°C TA=25°C 30 Power (W) 10.0 ZθJA Normalized Transient Thermal Resistance 0 6 40 100.0 ID (Amps) 2 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 0.00001 PD Ton Single Pulse 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100