Datasheet

AO4801A
30V P-Channel MOSFET
General Description
Product Summary
The AO4801A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is suitable for use as a
load switch or in PWM applications.
ID (at VGS=-10V)
-30V
-5A
RDS(ON) (at VGS=-10V)
< 48mΩ
VDS
RDS(ON) (at VGS =-4.5V)
< 57mΩ
RDS(ON) (at VGS =-2.5V)
< 80mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D2
D1
Bottom View
SOIC-8
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Units
V
±12
V
-5
ID
TA=70°C
Maximum
-30
A
-4
Pulsed Drain Current C
IDM
Avalanche Current C
IAS, IAR
17
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
14
mJ
Power Dissipation B
Junction and Storage Temperature Range
Rev 3: Mar. 2011
2
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
-28
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.3
RθJA
RθJL
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-55 to 150
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4801A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
-1
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-28
TJ=55°C
±100
nA
-0.9
-1.3
V
40
48
60
72
VGS=-4.5V, ID=-3.5A
45
57
mΩ
80
mΩ
TJ=125°C
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.5A
60
gFS
Forward Transconductance
VDS=-5V, ID=-5A
18
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Body Diode Reverse Recovery Time
Qrr
µA
-5
VGS=-10V, ID=-5A
Crss
Units
V
VDS=-30V, VGS=0V
IDSS
Coss
Max
S
-1
V
-2.5
A
515
645
780
pF
55
80
105
pF
30
55
80
pF
4
7.8
12
Ω
7
9
nC
5
VGS=-4.5V, VDS=-15V, ID=-5A
mΩ
1.5
nC
2.5
nC
6.5
ns
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=6Ω
3.5
ns
41
ns
IF=-5A, dI/dt=100A/µs
11
15
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
3.5
5
Turn-Off Fall Time
9
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in
any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: Mar. 2011
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Page 2 of 5
AO4801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
-10V
VDS=-5V
25
-4.5V
15
-3V
-ID(A)
-ID (A)
20
15
-2.5V
125°C
10
10
25°C
5
5
VGS=-2V
0
0
0
1
2
3
4
0
5
0.5
90
1.5
2
2.5
3
Normalized On-Resistance
1.8
VGS=-2.5V
70
RDS(ON) (mΩ )
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-4.5V
50
30
VGS=-10V
VGS=-4.5V
ID=-3.5A
1.6
VGS=-10V
ID=-5A
1.4
VGS17
=-2.5V
5
ID=-2.5A
1.2
2
10
1
0.8
10
0
2
4
6
8
0
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
100
1.0E+01
ID=-5A
1.0E+00
40
80
125°C
1.0E-01
-IS (A)
RDS(ON) (mΩ )
125°C
60
1.0E-02
25°C
1.0E-03
40
25°C
1.0E-04
1.0E-05
20
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 3: Mar. 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
5
VDS=-15V
ID=-5A
1000
Ciss
Capacitance (pF)
-VGS (Volts)
4
3
2
800
600
400
Coss
1
0
0
0
3
6
9
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
0
100.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
1000
100µs
1.0
Power (W)
10.0
-ID (Amps)
Crss
200
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
10
1s
10s
DC
1
0.00001
0.0
0.1
1
10
100
100
-VDS (Volts)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 3: Mar. 2011
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Page 4 of 5
AO4801A
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 3: Mar. 2011
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5