AO4932 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. FET1(N-Channel) VDS= 30V FET2(N-Channel) 30V ID= 11A (VGS=10V) 8A (VGS=10V) RDS(ON) RDS(ON) < 12.5mΩ (VGS=10V) < 19mΩ (VGS=10V) < 15mΩ (VGS=4.5V) < 23mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 Top View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Bottom View Top View D2 G2 D2 S2/D1 S2/D1 S2/D1 G1 S1 D1 G1 TM D2 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max FE1 Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current ±12 ±20 V 11 8 9 6.5 IDM 60 40 IAS, IAR 15 19 A EAS, EAR 11 18 mJ 2 2 1.3 1.3 ID TA=70°C C Avalanche energy L=0.1mH C TA=25°C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: Nov 2011 Units V VGS TA=25°C Avalanche Current C Power Dissipation B Max FET2 30 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 A W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 9 AO4932 FET1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=1mA, VGS=0V Typ V VDS=30V, VGS=0V 0.5 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.1 ID(ON) On state drain current VGS=10V, VDS=5V 60 TJ=125°C 500 VDS=0V, VGS= ±12V VGS=10V, ID=11A nA 1.65 2.1 V 10 12.5 15 18 15 A Static Drain-Source On-Resistance VGS=4.5V, ID=9A 12 gFS Forward Transconductance VDS=5V, ID=11A 75 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode + Schottky Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=11A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs mΩ mΩ S 0.7 V 4 A 930 1170 1400 pF 90 128 170 pF 45 89 125 pF 0.7 1.4 2.1 Ω 16 20 24 nC 7 8.7 10.5 nC VGS=10V, VDS=15V, RL=1.4Ω, RGEN=3Ω 3.2 nC 3 nC 6 ns 2.4 ns 23 ns 4 IF=11A, dI/dt=500A/µs mA 100 RDS(ON) Output Capacitance Units 30 IDSS Coss Max ns 5.5 7 8.5 5 6.5 8 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Nov. 2011 www.aosmd.com Page 2 of 9 AO4932 FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 35 10V 30 3V 25 2.75V 25 20 ID(A) ID (A) VDS=5V 30 4.5V 2.5V 15 10 20 125°C 15 25°C 10 5 5 VGS=2.25V 0 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2.4 2.7 3 Normalized On-Resistance 1.8 VGS=4.5V 12 RDS(ON) (mΩ Ω) 2.1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 14 10 VGS=10V 8 6 VGS=10V ID=11A 1.6 1.4 17 VGS=4.5V5 ID=9A 1.2 2 10 1 0.8 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=11A 1.0E+01 125°C 40 20 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 1.8 15 25°C 1.0E-01 1.0E-02 1.0E-03 10 1.0E-04 25°C 5 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: Nov. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 9 AO4932 FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=15V ID=11A 1200 4 900 600 Coss 2 300 0 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 25 100.0 5 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics 30 1000 100µs 1.0 1ms 10ms 0.1 TA=25°C 10µs RDS(ON) limited 10.0 ID (Amps) Ciss Capacitance (pF) 6 TJ(Max)=150°C TA=25°C DC 100 Power (W) VGS (Volts) 8 10 10s 1 0.0 0.01 0.1 1 VDS (Volts) 10 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 Rev 4: Nov. 2011 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 9 AO4932 FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-01 0.9 20A 0.8 10A 0.7 1.E-02 VDS=30V IR (A) VSD (V) 0.6 1.E-03 0.5 0.4 5A 0.3 VDS=15V 1.E-04 IS=1A 0.2 0.1 0 1.E-05 0 0 50 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature 12 12 50 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 8 3 di/dt=800A/µs di/dt=800A/µs 10 10 125ºC 2.5 125ºC 6 4 2 S 1.5 125ºC 4 125ºC Irm 4 2 2 0 0 0 5 10 15 20 25 0 0 IS (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 10 Is=20A 125ºC 8 5 125ºC 2 Is=20A 125ºC 25ºC 0 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 4: Nov. 2011 30 www.aosmd.com 2.5 2 25ºC 6 trr 125ºC 4 2 Irm 25 8 trr (ns) 4 4 20 3 10 Irm (A) Qrr (nC) 6 15 12 8 25ºC Qrr 10 IS (A) Figure 15: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 40 6 0.5 0 30 10 1 25ºC 25ºC S 6 Qrr 2 25ºC trr S 2 25ºC 0 1.5 1 0.5 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 17: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 5 of 9 S 6 trr (ns) 8 25ºC Irm (A) Qrr (nC) 8 AO4932 FET2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V VDS=30V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±16V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8A ID(ON) Min Conditions gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance V 5 1.2 VGS=4.5V, ID=4A VDS=5V, ID=8A IS=1A,VGS=0V VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA 10 µA 1.8 2.4 V 15.5 19 21 25 18.6 23 40 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Units 1 TJ=125°C Static Drain-Source On-Resistance Max 30 TJ=55°C RDS(ON) Coss Typ A 30 0.75 mΩ mΩ S 1 V 2.5 A 600 740 888 pF 77 110 145 pF 50 82 115 pF 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC 2 2.5 3 nC 2 3 5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=15V, ID=8A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 5 ns 3.5 ns 19 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 22 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Nov. 2011 www.aosmd.com Page 6 of 9 AO4932 FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V VDS=5V 4V 25 25 3.5V 5V 20 ID(A) ID (A) 20 3V 15 15 10 10 VGS=2.5V 5 25°C 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 30 Normalized On-Resistance 1.6 25 RDS(ON) (mΩ Ω) 125°C 5 VGS=4.5V 20 15 VGS=10V 10 VGS=10V ID=8A 1.4 17 5 VGS=4.5V 2 ID=4A 10 1.2 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 40 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=8A 1.0E+01 35 40 1.0E+00 25 125°C -IS (A) RDS(ON) (mΩ Ω) 30 1.0E-01 125°C 1.0E-02 20 1.0E-03 15 25°C 25°C 1.0E-04 10 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: Nov. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AO4932 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=8A 1000 8 Capacitance (pF) VGS (Volts) Ciss 6 4 800 600 400 Coss 2 200 0 0 Crss 0 3 6 g (nC) 9 12 Q Figure 7: Gate-Charge Characteristics 0 15 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TA=25°C 10µs RDS(ON) 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 100 Power (W) 10.0 -ID (Amps) 30 10 10s DC 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 0.01 PD Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 4: Nov. 2011 www.aosmd.com Page 8 of 9 AO4932 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 4: Nov. 2011 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 9 of 9