AOSMD AO4629

AO4629
30V Complementary MOSFET
General Description
Product Summary
AO4629 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This
complementary N and P channel MOSFET configuration is
ideal for low Input Voltage inverter applications.
N-Channel
VDS= 30V
P-Channel
-30V
ID= 6A (VGS=10V)
-5.5A (VGS=-10V)
RDS(ON)
RDS(ON)
< 30mΩ (VGS=10V)
< 41mΩ (VGS=-10V)
< 42mΩ (VGS=4.5V)
< 74mΩ (VGS=-4.5V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
SOIC-8
D2
Top View
D1
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
G1
S2
n-channel
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
ID
TA=70°C
C
S1
p-channel
Max p-channel
-30
Units
V
±20
±20
V
6
-5.5
5
-4.5
A
IDM
30
-25
Avalanche Current C
IAS, IAR
10
17
A
Avalanche energy L=0.1mH C
EAS, EAR
5
14
mJ
TA=25°C
Power Dissipation B
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Rev 2: Nov 2011
Steady-State
Steady-State
2
1.3
TJ, TSTG
Symbol
t ≤ 10s
2
1.3
RθJA
RθJL
www.aosmd.com
-55 to 150
Typ
48
74
32
W
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 9
AO4629
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Min
Conditions
ID=250µA, VGS=0V
V
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.2
VGS=10V, VDS=5V
30
VGS=10V, ID=6A
100
nA
2.4
V
25
30
40
48
42
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
33
gFS
Forward Transconductance
VDS=5V, ID=6A
15
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
255
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
mΩ
mΩ
S
1
V
2.5
A
310
45
1.6
µA
1.8
RDS(ON)
Output Capacitance
Units
1
VGS(th)
Coss
Max
30
VDS=30V, VGS=0V
uses
ID(ON)
Typ
pF
pF
35
50
pF
3.25
4.9
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4
5.2
6.3
nC
Qg(4.5V) Total Gate Charge
2
2.55
3.2
nC
VGS=10V, VDS=15V, ID=6A
Qgs
Gate Source Charge
0.85
nC
Qgd
Gate Drain Charge
1.3
nC
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
2.5
ns
tD(off)
Turn-Off DelayTime
14.5
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs
8.5
12
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
2.2
3
VGS=10V, VDS=15V, RL=2.5Ω,
RGEN=3Ω
3.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Nov 2011
www.aosmd.com
Page 2 of 9
AO4629
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
15
10V
VDS=5V
25
4.5V
6V
4V
9
ID(A)
ID (A)
20
12
15
3.5V
6
125°C
10
3
5
25°C
VGS=3V
0
0
0
1
2
3
4
5
0.5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
2.5
3
3.5
4
4.5
Normalized On-Resistance
2
40
VGS=4.5V
RDS(ON) (mΩ
Ω)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
45
35
30
25
VGS=10V
20
15
VGS=10V
ID=6A
1.8
1.6
17
5
2
VGS=4.5V
10
I =5A
1.4
1.2
D
1
0.8
0
2
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
100
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=6A
1.0E+01
40
80
1.0E+00
IS (A)
RDS(ON) (mΩ
Ω)
1
60
125°C
1.0E-01
125°C
25°C
1.0E-02
1.0E-03
40
25°C
1.0E-04
20
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Nov 2011
4
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 9
AO4629
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
500
VDS=15V
ID=6A
400
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
300
200
Coss
2
100
0
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
6
100.0
Crss
5
10 V (Volts)
15
20
25
DS
Figure 8: Capacitance Characteristics
30
1000
TA=25°C
10µs
RDS(ON)
limited
100
100µs
1ms
1.0
10ms
0.1
TJ(Max)=150°C
TA=25°C
Power (W)
ID (Amps)
10.0
10
10s
DC
1
0.0
0.01
0.1
1
VDS (Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
Rev 2: Nov 2011
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
Page 4 of 9
AO4629
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 2: Nov 2011
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 9
AO4629
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
-30
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-5.5A
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
-1.5
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
VGS=-4.5V, ID=-4.5A
VDS=-5V, ID=-5.5A
IS=-1A,VGS=0V
100
nA
-2.5
V
32
41
47
58
51
74
A
13
-0.76
VGS=0V, VDS=0V, f=1MHz
mΩ
S
V
-2.5
A
pF
100
pF
65
pF
Ω
7.5
11.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2
11
nC
Qg(4.5V) Total Gate Charge
4.6
6
nC
VGS=-10V, VDS=-15V, ID=-5.5A
3.5
mΩ
-1
520
VGS=0V, VDS=-15V, f=1MHz
µA
-2
-25
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Units
-5
TJ=125°C
RDS(ON)
Max
-1
TJ=55°C
uses
ID(ON)
Typ
Qgs
Gate Source Charge
1.6
nC
Qgd
Gate Drain Charge
2.2
nC
tD(on)
Turn-On DelayTime
7.5
ns
tr
Turn-On Rise Time
5.5
ns
tD(off)
Turn-Off DelayTime
19
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=-10V, VDS=-15V, RL=2.7Ω,
RGEN=3Ω
7
ns
IF=-5.5A, dI/dt=500A/µs
11
Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=500A/µs
5.3
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Nov 2011
www.aosmd.com
Page 6 of 9
AO4629
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
-10V
-5V
-8V
20
VDS=-5V
25
-4.5V
20
-ID(A)
-ID (A)
15
-4V
15
10
10
5
VGS=-3.5V
125°C
5
25°C
0
0
0
1
2
3
4
5
0.5
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
80
Normalized On-Resistance
1.8
70
VGS=-4.5V
60
RDS(ON) (mΩ
Ω)
1
50
40
30
VGS=-10V
20
10
VGS=-10V
ID=-5.5A
1.6
1.4
17
5
2
10
VGS=-4.5V
1.2
1
ID=-4.5A
0.8
0
2
4
6
8
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
120
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=-5.5A
1.0E+01
100
40
80
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
60
125°C
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
40
1.0E-04
25°C
20
1.0E-05
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Nov 2011
4
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 9
AO4629
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=-15V
ID=-5.5A
700
Ciss
600
Capacitance (pF)
-VGS (Volts)
8
6
4
500
400
300
Coss
200
2
100
Crss
0
0
0
2
4 g (nC)
6
8
Q
Figure 7: Gate-Charge Characteristics
0
10
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs
RDS(ON)
100µs
1ms
1.0
10ms
0.1
TJ(Max)=150°C
TA=25°C
100
Power (W)
-ID (Amps)
10.0
10
10s
DC
0.0
1
0.01
0.1
1
-VDS (Volts)
10
100
0.00001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Nov 2011
www.aosmd.com
Page 8 of 9
AO4629
Gate Charge Test Circuit & W aveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 2: Nov 2011
Vgs
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 9 of 9