AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 30V P-Channel -30V ID= 6A (VGS=10V) -5.5A (VGS=-10V) RDS(ON) RDS(ON) < 30mΩ (VGS=10V) < 41mΩ (VGS=-10V) < 42mΩ (VGS=4.5V) < 74mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 D2 Top View D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 n-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current ID TA=70°C C S1 p-channel Max p-channel -30 Units V ±20 ±20 V 6 -5.5 5 -4.5 A IDM 30 -25 Avalanche Current C IAS, IAR 10 17 A Avalanche energy L=0.1mH C EAS, EAR 5 14 mJ TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev 2: Nov 2011 Steady-State Steady-State 2 1.3 TJ, TSTG Symbol t ≤ 10s 2 1.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 9 AO4629 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=250µA, VGS=0V V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.2 VGS=10V, VDS=5V 30 VGS=10V, ID=6A 100 nA 2.4 V 25 30 40 48 42 A Static Drain-Source On-Resistance VGS=4.5V, ID=5A 33 gFS Forward Transconductance VDS=5V, ID=6A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 255 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ mΩ S 1 V 2.5 A 310 45 1.6 µA 1.8 RDS(ON) Output Capacitance Units 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V uses ID(ON) Typ pF pF 35 50 pF 3.25 4.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4 5.2 6.3 nC Qg(4.5V) Total Gate Charge 2 2.55 3.2 nC VGS=10V, VDS=15V, ID=6A Qgs Gate Source Charge 0.85 nC Qgd Gate Drain Charge 1.3 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time 2.5 ns tD(off) Turn-Off DelayTime 14.5 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 8.5 12 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 2.2 3 VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Nov 2011 www.aosmd.com Page 2 of 9 AO4629 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 15 10V VDS=5V 25 4.5V 6V 4V 9 ID(A) ID (A) 20 12 15 3.5V 6 125°C 10 3 5 25°C VGS=3V 0 0 0 1 2 3 4 5 0.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 2.5 3 3.5 4 4.5 Normalized On-Resistance 2 40 VGS=4.5V RDS(ON) (mΩ Ω) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 45 35 30 25 VGS=10V 20 15 VGS=10V ID=6A 1.8 1.6 17 5 2 VGS=4.5V 10 I =5A 1.4 1.2 D 1 0.8 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 100 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=6A 1.0E+01 40 80 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 1 60 125°C 1.0E-01 125°C 25°C 1.0E-02 1.0E-03 40 25°C 1.0E-04 20 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Nov 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 9 AO4629 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 500 VDS=15V ID=6A 400 Ciss Capacitance (pF) VGS (Volts) 8 6 4 300 200 Coss 2 100 0 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 0 6 100.0 Crss 5 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics 30 1000 TA=25°C 10µs RDS(ON) limited 100 100µs 1ms 1.0 10ms 0.1 TJ(Max)=150°C TA=25°C Power (W) ID (Amps) 10.0 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 Rev 2: Nov 2011 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 9 AO4629 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 2: Nov 2011 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AO4629 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-5.5A Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current -1.5 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V VGS=-4.5V, ID=-4.5A VDS=-5V, ID=-5.5A IS=-1A,VGS=0V 100 nA -2.5 V 32 41 47 58 51 74 A 13 -0.76 VGS=0V, VDS=0V, f=1MHz mΩ S V -2.5 A pF 100 pF 65 pF Ω 7.5 11.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.2 11 nC Qg(4.5V) Total Gate Charge 4.6 6 nC VGS=-10V, VDS=-15V, ID=-5.5A 3.5 mΩ -1 520 VGS=0V, VDS=-15V, f=1MHz µA -2 -25 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Units -5 TJ=125°C RDS(ON) Max -1 TJ=55°C uses ID(ON) Typ Qgs Gate Source Charge 1.6 nC Qgd Gate Drain Charge 2.2 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time 5.5 ns tD(off) Turn-Off DelayTime 19 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=3Ω 7 ns IF=-5.5A, dI/dt=500A/µs 11 Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=500A/µs 5.3 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Nov 2011 www.aosmd.com Page 6 of 9 AO4629 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 -10V -5V -8V 20 VDS=-5V 25 -4.5V 20 -ID(A) -ID (A) 15 -4V 15 10 10 5 VGS=-3.5V 125°C 5 25°C 0 0 0 1 2 3 4 5 0.5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 80 Normalized On-Resistance 1.8 70 VGS=-4.5V 60 RDS(ON) (mΩ Ω) 1 50 40 30 VGS=-10V 20 10 VGS=-10V ID=-5.5A 1.6 1.4 17 5 2 10 VGS=-4.5V 1.2 1 ID=-4.5A 0.8 0 2 4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 120 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=-5.5A 1.0E+01 100 40 80 -IS (A) RDS(ON) (mΩ Ω) 1.0E+00 60 125°C 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 40 1.0E-04 25°C 20 1.0E-05 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Nov 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AO4629 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=-15V ID=-5.5A 700 Ciss 600 Capacitance (pF) -VGS (Volts) 8 6 4 500 400 300 Coss 200 2 100 Crss 0 0 0 2 4 g (nC) 6 8 Q Figure 7: Gate-Charge Characteristics 0 10 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) 100µs 1ms 1.0 10ms 0.1 TJ(Max)=150°C TA=25°C 100 Power (W) -ID (Amps) 10.0 10 10s DC 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: Nov 2011 www.aosmd.com Page 8 of 9 AO4629 Gate Charge Test Circuit & W aveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 2: Nov 2011 Vgs L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 9 of 9