AOB411L 60V P-Channel MOSFET General Description Product Summary The AOB411L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS -60V -78A ID (at VGS=-10V) RDS(ON) (at VGS=-10V) < 16.5mΩ RDS(ON) (at VGS=-4.5V) < 22mΩ 100% UIS Tested 100% Rg Tested D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C V Avalanche Current C IAS, IAR -6.5 -77 Avalanche energy L=0.1mH C EAS, EAR 296 TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 0: Mar. 2011 Steady-State Steady-State W 2.1 RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s A mJ 93 PDSM TA=70°C A 187 PD TC=100°C A -8 IDSM TA=70°C ±20 -55 -230 IDM TA=25°C Continuous Drain Current Units V -78 ID TC=100°C Maximum -60 -55 to 175 Typ 11 47 0.6 °C Max 15 60 0.8 Units °C/W °C/W °C/W Page 1 of 6 AOB411L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V VDS=-60V, VGS=0V -60 -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -230 VGS=-10V, ID=-20A TJ=125°C VGS=-4.5V, ID=-20A gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current G IS VDS=-5V, ID=-20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-20A Units V TJ=55°C Static Drain-Source On-Resistance Max -1 VGS(th) RDS(ON) Typ µA ±100 nA -2 -2.5 V 13.5 16.5 20.5 25 17 22 mΩ -1 -105 V A 48 -0.7 mΩ S A 4260 5330 6400 pF 335 483 630 pF 140 234 330 pF 1.4 2.8 4.2 Ω 65 83 100 nC 35 40 50 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 18 27 36 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 110 165 215 VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω 15 nC 18 nC 17.5 ns 20 ns 83.5 ns 37 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Mar. 2011 www.aosmd.com Page 2 of 6 AOB411L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 VDS=-5V 80 -7V -4V 60 -ID(A) -ID (A) 100 -4.5V -5V -10V 40 60 40 125°C -3.5V 20 20 VGS=-3V 0 0 1 2 3 4 25°C 0 1 5 2 20 4 5 6 Normalized On-Resistance 2 VGS=-4.5V 18 RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 16 14 12 VGS=-10V 10 1.8 VGS=-10V ID=-20A 1.6 17 5 2 VGS=-4.5V 10 I =-20A 1.4 1.2 D 1 0.8 0 5 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 40 1.0E+02 ID=-20A 1.0E+01 35 125°C IS (A) RDS(ON) (mΩ) 40 1.0E+00 30 25 1.0E-01 125°C 1.0E-02 20 25°C 25°C 1.0E-03 15 1.0E-04 10 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Mar. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOB411L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=-30V ID=-20A 7000 Ciss 6000 Capacitance (pF) -VGS (Volts) 8 6 4 5000 4000 3000 Coss 2000 2 Crss 1000 0 0 0 10 20 30 40 50 60 70 80 Qg (nC) Figure 7: Gate-Charge Characteristics 0 90 30 40 50 -VDS (Volts) Figure 8: Capacitance Characteristics 10.0 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 60 TJ(Max)=175°C TC=25°C 800 100µs RDS(ON) limited Power (W) -ID (Amps) 10µs 10µs 100.0 17 5 2 10 600 400 200 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 20 1000 1000.0 10 10 0.1 100 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 0.1 1 0 18 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.8°C/W 1 PD 0.1 Ton Single Pulse 0.01 0.00001 Rev 0: Mar. 2011 0.0001 0.001 T 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 10 100 Page 4 of 6 AOB411L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 Power Dissipation (W) -IAR (A) Peak Avalanche Current 1000 TA=25°C 100 TA=100°C TA=150°C TA=125°C 10 160 120 80 40 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 1000 90 175 TA=25°C 80 70 60 Power (W) Current rating ID(A) 150 TCASE (°C) Figure 13: Power De-rating (Note F) 50 40 30 100 17 5 2 10 10 20 10 0 0 25 50 75 100 125 150 175 1 0.01 ZθJA Normalized Transient Thermal Resistance 10 1 1 100 0 10000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 40 RθJA=60°C/W 0.1 PD 0.01 0.001 0.01 Single Pulse 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Mar. 2011 www.aosmd.com Page 5 of 6 AOB411L Gate Charge Test Circuit & W aveform Vgs Qg -10V + VDC - Qgs Vds Qgd + VDC DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs VDC - DUT Vgs Rg td(on) td(off) tr tf 90% Vdd + Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id VDC - Vgs Vgs + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: Mar. 2011 Vgs L -Isd + Vdd VDC - -I F t rr dI/dt -I RM Vdd -Vds www.aosmd.com Page 6 of 6