AOSMD AON7421

AON7421
20V P-Channel MOSFET
General Description
Product Summary
The AON7421 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=-10V)
-20V
-50A
RDS(ON) (at VGS=-10V)
< 4.6mΩ
RDS(ON) (at VGS =-4.5V)
< 5.8mΩ
RDS(ON) (at VGS =-2.5V)
< 9.0mΩ
100% UIS Tested
100% Rg Tested
DFN 3.3x3.3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
V
A
-200
-30
IDSM
TA=70°C
±12
-39
IDM
TA=25°C
Continuous Drain
Current
Units
V
-50
ID
TC=100°C
Maximum
-20
A
-24.5
Avalanche Current C
IAS
50
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
125
mJ
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: Oct. 2011
6.2
Steady-State
Steady-State
RθJA
RθJC
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W
4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
-55 to 150
Typ
16
45
1.1
°C
Max
20
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7421
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-200
TJ=55°C
nA
V
3.7
4.6
5
6.2
VGS=-4.5V, ID=-20A
4.5
5.8
mΩ
VGS=-2.5V, ID=-20A
6.3
9
mΩ
TJ=125°C
Forward Transconductance
VDS=-5V, ID=-20A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
A
90
-0.58
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
µA
-1.2
gFS
Coss
-5
±100
VSD
IS
Units
-0.8
VGS=-10V, ID=-20A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=-10V, f=1MHz
mΩ
S
-1
V
-50
A
4550
pF
823
pF
563
pF
2.1
4.2
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
95
114
nC
Qg(4.5V) Total Gate Charge
44
53
nC
Qgs
Gate Source Charge
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-10V, ID=-20A
6.5
nC
Qgd
Gate Drain Charge
14
nC
tD(on)
Turn-On DelayTime
7
ns
tr
Turn-On Rise Time
12
ns
134
ns
45
ns
ns
nC
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=-10V, VDS=-10V, RL=0.5Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=500A/µs
30
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
75
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct. 2011
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Page 2 of 6
AON7421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
-10V
-2.5V
100
VDS=-5V
-3V
80
-4.5V
80
60
-ID(A)
-ID (A)
-2V
60
40
125°C
40
20
20
25°C
VGS=-1.5V
0
0
0
1
2
3
4
0
5
1
1.5
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
10
Normalized On-Resistance
1.6
8
RDS(ON) (mΩ
Ω)
0.5
VGS=-2.5V
6
VGS=-4.5V
4
VGS=-10V
2
VGS=-10V
ID=-20A
1.4
17
5
VGS=-4.5V
ID=-20A2
10
1.2
1
VGS=-2.5V
ID=-20A
0.8
0
0
5
0
10
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
18
ID=-20A
1.0E+01
-IS (A)
15
RDS(ON) (mΩ
Ω)
12
40
125°C
1.0E+00
1.0E-01
9
125°C
1.0E-02
25°C
6
1.0E-03
3
25°C
0
1.0E-04
1.0E-05
0
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Oct. 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=-10V
ID=-20A
Capacitance (pF)
-VGS (Volts)
Ciss
5000
8
6
4
4000
3000
2000
2
Coss
1000
Crss
0
0
0
10
20
30
40 50 60 70 80
Qg (nC)
Figure 7: Gate-Charge Characteristics
90
100
0
20
400
1000.0
RDS(ON)
limited
300
100µs
1ms
10ms
10.0
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
350
10µs 10µs
Power (W)
100.0
-ID (Amps)
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
250
17
5
2
10
200
150
100
50
0.0
0
0.01
0.1
1
-VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18Junction-to-Case
Figure 10: Single Pulse Power Rating
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Oct. 2011
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Page 4 of 6
AON7421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=100°C
TA=25°C
100
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
1000
TA=150°C
TA=125°C
10
1
80
60
40
20
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
70
60
TA=25°C
1000
50
Power (W)
-Current rating ID(A)
150
40
30
20
17
5
2
10
100
10
10
1
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Oct. 2011
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Page 5 of 6
AON7421
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 0: Oct. 2011
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 6 of 6