AON7421 20V P-Channel MOSFET General Description Product Summary The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=-10V) -20V -50A RDS(ON) (at VGS=-10V) < 4.6mΩ RDS(ON) (at VGS =-4.5V) < 5.8mΩ RDS(ON) (at VGS =-2.5V) < 9.0mΩ 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C V A -200 -30 IDSM TA=70°C ±12 -39 IDM TA=25°C Continuous Drain Current Units V -50 ID TC=100°C Maximum -20 A -24.5 Avalanche Current C IAS 50 A Avalanche energy L=0.1mH C TC=25°C EAS 125 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Oct. 2011 6.2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7421 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -0.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -200 TJ=55°C nA V 3.7 4.6 5 6.2 VGS=-4.5V, ID=-20A 4.5 5.8 mΩ VGS=-2.5V, ID=-20A 6.3 9 mΩ TJ=125°C Forward Transconductance VDS=-5V, ID=-20A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance Reverse Transfer Capacitance Rg Gate resistance A 90 -0.58 G DYNAMIC PARAMETERS Ciss Input Capacitance Crss µA -1.2 gFS Coss -5 ±100 VSD IS Units -0.8 VGS=-10V, ID=-20A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-10V, f=1MHz mΩ S -1 V -50 A 4550 pF 823 pF 563 pF 2.1 4.2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 95 114 nC Qg(4.5V) Total Gate Charge 44 53 nC Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-10V, ID=-20A 6.5 nC Qgd Gate Drain Charge 14 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time 12 ns 134 ns 45 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-10V, RL=0.5Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 75 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Oct. 2011 www.aosmd.com Page 2 of 6 AON7421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 -10V -2.5V 100 VDS=-5V -3V 80 -4.5V 80 60 -ID(A) -ID (A) -2V 60 40 125°C 40 20 20 25°C VGS=-1.5V 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 1.6 8 RDS(ON) (mΩ Ω) 0.5 VGS=-2.5V 6 VGS=-4.5V 4 VGS=-10V 2 VGS=-10V ID=-20A 1.4 17 5 VGS=-4.5V ID=-20A2 10 1.2 1 VGS=-2.5V ID=-20A 0.8 0 0 5 0 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 18 ID=-20A 1.0E+01 -IS (A) 15 RDS(ON) (mΩ Ω) 12 40 125°C 1.0E+00 1.0E-01 9 125°C 1.0E-02 25°C 6 1.0E-03 3 25°C 0 1.0E-04 1.0E-05 0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Oct. 2011 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=-10V ID=-20A Capacitance (pF) -VGS (Volts) Ciss 5000 8 6 4 4000 3000 2000 2 Coss 1000 Crss 0 0 0 10 20 30 40 50 60 70 80 Qg (nC) Figure 7: Gate-Charge Characteristics 90 100 0 20 400 1000.0 RDS(ON) limited 300 100µs 1ms 10ms 10.0 DC 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 350 10µs 10µs Power (W) 100.0 -ID (Amps) 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 250 17 5 2 10 200 150 100 50 0.0 0 0.01 0.1 1 -VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18Junction-to-Case Figure 10: Single Pulse Power Rating (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Oct. 2011 www.aosmd.com Page 4 of 6 AON7421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=100°C TA=25°C 100 Power Dissipation (W) -IAR (A) Peak Avalanche Current 1000 TA=150°C TA=125°C 10 1 80 60 40 20 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 70 60 TA=25°C 1000 50 Power (W) -Current rating ID(A) 150 40 30 20 17 5 2 10 100 10 10 1 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 150 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 0.01 PD Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Oct. 2011 www.aosmd.com Page 5 of 6 AON7421 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 0: Oct. 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6