AOSMD AOD4454

AOD4454
150V N-Channel MOSFET
General Description
Product Summary
VDS
The AOD4454 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
150V
20A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 94mΩ
RDS(ON) (at VGS=7V)
< 110mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
Top View
D
Bottom View
D
D
S
G
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
IAS, IAR
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: February 2011
3
Steady-State
Steady-State
5
A
1.3
mJ
W
50
2.5
RθJA
RθJC
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W
1.6
TJ, TSTG
Symbol
t ≤ 10s
A
100
PDSM
Junction and Storage Temperature Range
A
2.5
PD
TA=25°C
V
40
IDSM
TA=70°C
±20
14
IDM
TA=25°C
Units
V
20
ID
TC=100°C
Maximum
150
-55 to 175
Typ
16
41
1.2
°C
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD4454
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=250µA, VGS=0V
150
1
TJ=55°C
VDS=0V, VGS= ±20V
±100
Gate Threshold Voltage
VDS=VGS ID=250µA
3.4
On state drain current
VGS=10V, VDS=5V
40
VGS=10V, ID=10A
188
VGS=7V, ID=10A
84
110
mΩ
VDS=5V, ID=10A
20
1
V
46
A
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
VGS=0V, VDS=75V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
V
A
151
gFS
Rg
4.6
94
Static Drain-Source On-Resistance
Reverse Transfer Capacitance
4
nA
75.5
RDS(ON)
Output Capacitance
Units
µA
5
VGS(th)
Coss
Max
V
VDS=150V, VGS=0V
ID(ON)
Crss
Typ
0.72
mΩ
S
655
820
985
pF
50
70
90
pF
13
22
31
pF
0.7
1.4
2.1
Ω
10
15
20
VGS=10V, VDS=75V, ID=10A
VGS=10V, VDS=75V, RL=7.5Ω,
RGEN=3Ω
nC
4
nC
4.4
nC
10.5
ns
5.5
ns
14.5
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
20
32.5
45
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
160
230
300
3
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2011
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Page 2 of 6
AOD4454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
10V
VDS=5V
7V
25
6.5V
15
ID(A)
ID (A)
20
15
10
6V
10
5
5
125°C
25°C
VGS=5.5V
0
0
0
1
2
3
4
5
2
3
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
6
7
8
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
110
Normalized On-Resistance
2.8
100
RDS(ON) (mΩ )
4
90
VGS=7V
80
70
VGS=10V
2.6
2.4
VGS=10V
ID=10A
2.2
2
17
5
2
VGS=7V 10
1.8
1.6
1.4
1.2
ID=10A
1
60
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
190
1.0E+02
ID=10A
170
1.0E+01
40
1.0E+00
125°C
130
IS (A)
RDS(ON) (mΩ )
150
110
125°C
1.0E-01
1.0E-02
90
25°C
25°C
1.0E-03
70
50
1.0E-04
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: February 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD4454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=75V
ID=10A
1000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
800
600
400
Coss
2
200
0
0
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
100.0
15
30
45
60 75 90 105 120 135 150
VDS (Volts)
Figure 8: Capacitance Characteristics
500
10µs 10µs
100µs
RDS(ON)
limited
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.1
TJ(Max)=175°C
TC=25°C
17
5
2
10
300
200
100
0.0
0.01
400
Power (W)
10.0
ID (Amps)
Crss
1
10
VDS (Volts)
100
1000
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
T
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2011
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Page 4 of 6
AOD4454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
120
IAR (A) Peak Avalanche Current
TA=25°C
A
TA=150°C
Power Dissipation (W)
T =100°C
TA=125°C
80
60
40
20
1
0
1
10
µs)
Time in avalanche, tA (µ
Figure 12: Single Pulse Avalanche capability
(Note C)
100
0
25
100
20
80
15
Power (W)
Current rating ID(A)
100
10
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
TA=25°C
17
5
2
10
60
40
5
20
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
0
0.00001
0
1018
1000
Pulse 0.1
Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1
PD
0.01
0.001
0.00001
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: February 2011
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Page 5 of 6
AOD4454
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: February 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6