AOD4454 150V N-Channel MOSFET General Description Product Summary VDS The AOD4454 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 150V 20A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 94mΩ RDS(ON) (at VGS=7V) < 110mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C IAS, IAR Avalanche energy L=0.1mH C TC=25°C EAS, EAR Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: February 2011 3 Steady-State Steady-State 5 A 1.3 mJ W 50 2.5 RθJA RθJC www.aosmd.com W 1.6 TJ, TSTG Symbol t ≤ 10s A 100 PDSM Junction and Storage Temperature Range A 2.5 PD TA=25°C V 40 IDSM TA=70°C ±20 14 IDM TA=25°C Units V 20 ID TC=100°C Maximum 150 -55 to 175 Typ 16 41 1.2 °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 6 AOD4454 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=250µA, VGS=0V 150 1 TJ=55°C VDS=0V, VGS= ±20V ±100 Gate Threshold Voltage VDS=VGS ID=250µA 3.4 On state drain current VGS=10V, VDS=5V 40 VGS=10V, ID=10A 188 VGS=7V, ID=10A 84 110 mΩ VDS=5V, ID=10A 20 1 V 46 A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance VGS=0V, VDS=75V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime V A 151 gFS Rg 4.6 94 Static Drain-Source On-Resistance Reverse Transfer Capacitance 4 nA 75.5 RDS(ON) Output Capacitance Units µA 5 VGS(th) Coss Max V VDS=150V, VGS=0V ID(ON) Crss Typ 0.72 mΩ S 655 820 985 pF 50 70 90 pF 13 22 31 pF 0.7 1.4 2.1 Ω 10 15 20 VGS=10V, VDS=75V, ID=10A VGS=10V, VDS=75V, RL=7.5Ω, RGEN=3Ω nC 4 nC 4.4 nC 10.5 ns 5.5 ns 14.5 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 20 32.5 45 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 160 230 300 3 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: February 2011 www.aosmd.com Page 2 of 6 AOD4454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 10V VDS=5V 7V 25 6.5V 15 ID(A) ID (A) 20 15 10 6V 10 5 5 125°C 25°C VGS=5.5V 0 0 0 1 2 3 4 5 2 3 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 6 7 8 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 110 Normalized On-Resistance 2.8 100 RDS(ON) (mΩ ) 4 90 VGS=7V 80 70 VGS=10V 2.6 2.4 VGS=10V ID=10A 2.2 2 17 5 2 VGS=7V 10 1.8 1.6 1.4 1.2 ID=10A 1 60 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 190 1.0E+02 ID=10A 170 1.0E+01 40 1.0E+00 125°C 130 IS (A) RDS(ON) (mΩ ) 150 110 125°C 1.0E-01 1.0E-02 90 25°C 25°C 1.0E-03 70 50 1.0E-04 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: February 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD4454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=75V ID=10A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 800 600 400 Coss 2 200 0 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 100.0 15 30 45 60 75 90 105 120 135 150 VDS (Volts) Figure 8: Capacitance Characteristics 500 10µs 10µs 100µs RDS(ON) limited 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.1 TJ(Max)=175°C TC=25°C 17 5 2 10 300 200 100 0.0 0.01 400 Power (W) 10.0 ID (Amps) Crss 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 T 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: February 2011 www.aosmd.com Page 4 of 6 AOD4454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 120 IAR (A) Peak Avalanche Current TA=25°C A TA=150°C Power Dissipation (W) T =100°C TA=125°C 80 60 40 20 1 0 1 10 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 100 0 25 100 20 80 15 Power (W) Current rating ID(A) 100 10 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 TA=25°C 17 5 2 10 60 40 5 20 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 175 0 0.00001 0 1018 1000 Pulse 0.1 Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 PD 0.01 0.001 0.00001 Single Pulse Ton T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: February 2011 www.aosmd.com Page 5 of 6 AOD4454 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: February 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6