AOSMD AOD208

AOD208
30V N-Channel MOSFET
General Description
Product Summary
The AOD208 uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body
diode.
VDS
30V
54A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 4.4mΩ
RDS(ON) (at VGS = 4.5V)
< 6.5mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
Top View
D
Bottom View
D
D
S
G
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
Pulsed Drain Current
C
V
A
200
18
IDSM
TA=70°C
±20
42
IDM
TA=25°C
Continuous Drain
Current
Units
V
54
ID
TC=100°C
Maximum
30
A
14
Avalanche Current C
IAS, IAR
40
A
Avalanche energy L=0.1mH C
EAS, EAR
80
mJ
TC=25°C
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: Oct 2009
2.5
Steady-State
Steady-State
RθJA
RθJC
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W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
31
PDSM
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
62
PD
-55 to 175
Typ
15
41
2
°C
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD208
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
VDS=30V, VGS=0V
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
200
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=15A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
IS
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
µA
100
nA
1.8
2.3
V
3.5
4.4
5.4
6.7
5
6.5
A
66
0.7
mΩ
mΩ
S
1
V
54
A
1470
1840
2210
pF
500
720
940
pF
35
60
105
pF
0.3
0.7
1.1
Ω
22
28
35
nC
10
13
16
nC
3
4.2
5
nC
2.5
4.2
6
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VGS(th)
RDS(ON)
Typ
6.5
ns
7
ns
21
ns
3.5
ns
12
15
18
25
32
39
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct 2009
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Page 2 of 6
AOD208
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
7V
VDS=5V
3.5V
80
80
60
ID(A)
ID (A)
5V
60
3V
40
40
125°C
20
20
25°C
Vgs=2.5V
0
0
0
1
2
3
4
1
5
10
Normalized On-Resistance
RDS(ON) (mΩ)
2
2.5
3
3.5
4
2
8
VGS=4.5V
6
4
VGS=10V
2
1.8
VGS=10V
ID=20A
1.6
17
1.4
VGS=4.5V5
ID=15A 2
1.2
10
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
20
1.0E+02
ID=20A
1.0E+01
40
15
1.0E+00
10
IS (A)
RDS(ON) (mΩ)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
5
1.0E-04
25°C
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Oct 2009
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD208
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=15V
ID=20A
2500
Capacitance (pF)
VGS (Volts)
8
6
4
2
1500
1000
Crss
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
30
10µs
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
100µs
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
160
10µs
RDS(ON)
limited
Power (W)
100.0
10.0
5
30
200
1000.0
10
1
TJ(Max)=175°C
TC=25°C
17
5
2
10
120
80
40
1
VDS (Volts)
10
100
0
0.0001
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
1
0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=2.4°C/W
PD
0.1
Ton
0.01
0.00001
0.1
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
Coss
500
0
ID (Amps)
Ciss
2000
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Oct 2009
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Page 4 of 6
AOD208
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
TA=25°C
TA=100°C
100
TA=125°C
TA=150°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
50
40
30
20
10
10
0
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
50
75
100
150
175
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
30
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
150
175
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Oct 2009
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Page 5 of 6
AOD208
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: Oct 2009
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 6 of 6