AON6884L

AON6884L
40V Dual N-Channel MOSFET
General Description
Product Summary
The AON6884L uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This is an
all purpose device that is suitable for use in a wide range
of power conversion applications.
VDS
40V
34A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 11.3mΩ
RDS(ON) (at VGS = 4.5V)
< 13.8mΩ
100% UIS Tested
100% Rg Tested
D1
Top View
S1
1
8
G1
S2
2
7
3
6
D1
D1
D2
G2
4
5
D2
G1
G2
S1
DFN5X6 EP2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
C
Avalanche Current C
Avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev 0: June 2009
Steady-State
Steady-State
A
A
IAS, IAR
35
A
EAS, EAR
61
mJ
21
W
8
1.6
RθJA
RθJC
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W
1
TJ, TSTG
Symbol
t ≤ 10s
V
9
PDSM
TA=70°C
±20
7
PD
TC=100°C
Units
V
120
IDSM
TA=70°C
Maximum
40
21
IDM
TA=25°C
Continuous Drain
Current
S2
34
ID
TC=100°C
Pulsed Drain Current
D2
-55 to 150
Typ
35
65
5
°C
Max
45
80
6
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6884L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
VDS=40V, VGS=0V
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.55
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
VGS=10V, ID=10A
TJ=125°C
VGS=4.5V, ID=10A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=10A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=10A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
µA
±100
nA
2.1
2.7
V
9.4
11.3
14
17
11
13.8
A
50
0.7
mΩ
mΩ
S
1
V
25
A
1200
1500
1950
pF
150
215
280
pF
80
135
190
pF
1.7
3.5
5.3
Ω
22
27.2
33
nC
nC
10
13.6
16
3.6
4.5
5.4
nC
3.8
6.4
9
nC
VGS=10V, VDS=20V, RL=2Ω,
RGEN=3Ω
IF=10A, dI/dt=500A/µs
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
40
VGS(th)
RDS(ON)
Typ
6.4
ns
17.2
ns
29.6
ns
16.8
ns
9
13
17
25
35
45
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: June 2009
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Page 2 of 6
AON6884L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
100
4.5V
4V
80
60
ID(A)
ID (A)
VDS=5V
80
60
40
40
25°C
125°C
3.5V
20
20
VGS=3V
0
0
0
1
2
3
4
2
5
20
Normalized On-Resistance
RDS(ON) (mΩ)
3
3.5
4
4.5
1.8
16
VGS=4.5V
12
8
VGS=10V
VGS=10V
ID=10A
1.6
1.4
17
5
2
VGS=4.5V10
1.2
1
ID=10A
0.8
4
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
1.0E+02
ID=10A
1.0E+01
40
20
1.0E+00
IS (A)
RDS(ON) (mΩ)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
15
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
10
1.0E-04
25°C
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: June 2009
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6884L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=20V
ID=10A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1500
1000
2
500
0
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
ID (Amps)
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
10.0
100µs
DC
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.0
0.01
0.1
1
VDS (Volts)
17
5
2
10
120
80
40
10
0
0.0001
100
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
TJ(Max)=150°C
TC=25°C
160
10µs
Power (W)
10µs
RDS(ON)
limited
0.1
ZθJC Normalized Transient
Thermal Resistance
10
200
100.0
1
Crss
0
1000.0
10
Coss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=6°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
T
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: June 2009
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Page 4 of 6
AON6884L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
IAR (A) Peak Avalanche Current
25
Power Dissipation (W)
TA=25°C
TA=100°C
TA=150°C
TA=125°C
10
20
15
10
5
0
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
150
10000
40
35
TA=25°C
1000
30
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
25
20
15
17
5
2
10
100
10
10
5
1
0.00001
0
0
25
50
75
100
125
150
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=80°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: June 2009
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Page 5 of 6
AON6884L
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: June 2009
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 6 of 6