AOSMD AOL1208

AOL1208
30V N-Channel MOSFET
General Description
Product Summary
The AOL1208 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of RDS(ON)
and Crss.In addition,switching behavior is well controlled
with a "Schottky style" soft recovery body diode.
VDS
30V
50A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 11mΩ
RDS(ON) (at VGS = 4.5V)
< 15mΩ
100% UIS Tested
100% Rg Tested
Top View
UltraSO-8TM
Bottom View
D
D
S
S
G
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
C
V
A
120
11
IDSM
TA=70°C
±20
36
IDM
TA=25°C
Continuous Drain
Current
Units
V
50
ID
TC=100°C
Maximum
30
A
9
Avalanche Current C
IAS, IAR
27
A
Avalanche energy L=0.1mH C
EAS, EAR
36
mJ
TC=25°C
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0 : Feb 2010
2.5
Steady-State
Steady-State
RθJA
RθJC
www.aosmd.com
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
25
PDSM
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
50
PD
-55 to 175
Typ
24
40
2.4
°C
Max
30
50
3
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOL1208
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
On state drain current
VGS=10V, VDS=5V
120
VDS=0V, VGS= ±20V
100
16
VGS=4.5V, ID=15A
12
15
VDS=5V, ID=20A
49
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
V
A
13
TJ=125°C
nA
2.4
11
gFS
Crss
1.8
9
Static Drain-Source On-Resistance
µA
5
VGS=10V, ID=20A
Output Capacitance
V
TJ=55°C
RDS(ON)
Units
1
Zero Gate Voltage Drain Current
Coss
Max
30
IDSS
IS
Typ
0.7
mΩ
mΩ
S
1
V
40
A
680
850
1110
pF
260
380
540
pF
18
30
51
pF
0.7
1.4
2.1
Ω
12
16
20
nC
5
7
8.0
nC
2
2.5
4
nC
1.5
3.5
3.6
nC
6
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
3
ns
19.5
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
9
12
15
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
18
23
28
4
ns
ns
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Feb 2010
www.aosmd.com
Page 2 of 6
AOL1208
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
10V
6V
80
5V
VDS=5V
4.5V
7V
60
4V
ID(A)
ID (A)
60
3.5V
40
125°C
VGS=3V
20
40
20
0
25°C
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
3.5
4
4.5
5
1.8
Normalized On-Resistance
VGS=4.5V
12
RDS(ON) (mΩ)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
14
10
8
VGS=10V
6
4
0
5
10
15
20
25
VGS=10V
ID=20A
1.6
1.4
17
VGS=4.5V
5
ID=15A
1.2
2
10
1
0.8
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
1.0E+02
ID=20A
1.0E+01
40
20
1.0E+00
125°C
1.0E-01
125°C
15
IS (A)
RDS(ON) (mΩ)
2
25°C
1.0E-02
1.0E-03
10
1.0E-04
25°C
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Feb 2010
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOL1208
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
10
VDS=15V
ID=20A
1200
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
1000
800
600
400
200
0
2
4
6
8
10
12
14
16
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
18
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
100.0
RDS(ON)
limited
10.0
160
10µs
100us
1ms
DC
1.0
Power (W)
ID (Amps)
Crss
0
0
0.0
0.01
0.1
1
VDS (Volts)
80
40
10
0
0.0001
100
1
0.01
0.1
1
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
PD
0.1
0.01
0.00001
0.001
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
TJ(Max)=150°C
TC=25°C
120
TJ(Max)=150°C
TC=25°C
0.1
ZθJC Normalized Transient
Thermal Resistance
Coss
Ton
Single Pulse
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Feb 2010
www.aosmd.com
Page 4 of 6
AOL1208
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
Power Dissipation (W)
IAR (A) Peak Avalanche Current
50
TA=100°C
TA=25°C
TA=125°C
TA=150°C
40
30
20
10
0
10.0
0.000001
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note F)
TA=25°C
40
1000
Power (W)
Current rating ID(A)
50
10000
50
30
20
17
5
2
10
100
10
10
0
0
25
50
75
100
125
150
1
0.00001
175
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
ZθJA Normalized Transient
Thermal Resistance
25
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
0
18
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
0.1
PD
0.01
0.001
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Feb 2010
www.aosmd.com
Page 5 of 6
AOL1208
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: Feb 2010
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
www.aosmd.com
Page 6 of 6