AON6424 30V N-Channel MOSFET General Description Product Summary The AON6424 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. ID (at VGS=10V) VDS 30V 41A RDS(ON) (at VGS=10V) < 8.5mΩ RDS(ON) (at VGS = 4.5V) < 10mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C V A 90 11 IDSM TA=70°C ±12 26 IDM TA=25°C Units V 41 ID TC=100°C Maximum 30 A 9 Avalanche Current C IAS, IAR 36 A Avalanche energy L=0.05mH C TC=25°C EAS, EAR 32 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev1 : Oct 2010 2 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 10 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 25 PD -55 to 150 Typ 21 50 3.5 www.aosmd.com °C Max 25 60 5 Units °C/W °C/W °C/W Page 1 of 6 AON6424 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.8 ID(ON) On state drain current VGS=10V, VDS=5V 90 100 nA 1.2 1.7 V 6.8 8.5 11 13.5 VGS=4.5V, ID=20A 7.7 10 mΩ 1 V 30 A VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 IGSS Coss Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ mΩ S 1260 1580 1900 pF VGS=0V, VDS=15V, f=1MHz 110 160 210 pF 60 100 140 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 20 26 32 nC Qg(4.5V) Total Gate Charge 9 12 15 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=20A 2 3 4 nC 1.5 3 4.5 nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 5 ns 2 ns 29 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 8 10 3 12 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 12 16 20 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1 : Oct 2010 www.aosmd.com Page 2 of 6 AON6424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 30 10V 4V 6V 60 VDS=5V 25 2.5V ID(A) ID (A) 20 40 15 10 VGS=2V 125°C 20 25°C 5 0 0 0 1 2 3 4 0 5 12 1 1.5 2 2.5 3 Normalized On-Resistance 2.2 10 VGS=4.5V RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 6 VGS=10V 4 2 2 VGS=10V ID=20A 1.8 17 5 2 VGS=4.5V 10 ID=20A 1.6 1.4 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 30 1.0E+02 ID=20A 1.0E+01 25 40 1.0E+00 15 IS (A) RDS(ON) (mΩ Ω) 20 125°C 10 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev1 : Oct 2010 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2400 VDS=12.5V ID=20A Ciss 1800 Capacitance (pF) VGS (Volts) 8 6 4 1200 600 Crss 2 Coss 0 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 10µs 100.0 160 10µs TJ(Max)=150°C TC=25°C 10.0 100µs DC 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 Power (W) RDS(ON) ID (Amps) 30 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev1 : Oct 2010 www.aosmd.com Page 4 of 6 AON6424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 TA=25°C TA=100°C 100 TA=150°C 10 TA=125°C 25 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 20 15 10 5 1 0 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 50 10000 40 1000 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 150 TA=25°C Power (W) Current rating ID(A) 1 30 20 17 5 2 10 100 10 10 1 0 0.00001 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev1 : Oct 2010 www.aosmd.com Page 5 of 6 AON6424 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev1 : Oct 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6