AON6404A

AON6404A
30V N-Channel MOSFET
General Description
Product Summary
The AON6404A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
30V
85A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 2.3mΩ
RDS(ON) (at VGS=4.5V)
< 3.0mΩ
ESD protected
100% UIS Tested
100% Rg Tested
D
DFN5X6
Top View
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
CurrentG
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
TA=25°C
±20
V
A
67
IDM
280
25
IDSM
TA=70°C
Units
V
85
ID
TC=100°C
Maximum
30
A
19
Avalanche Current C
IAS, IAR
60
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
180
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1.0: November 2013
2.3
Steady-State
Steady-State
RθJA
RθJC
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W
1.4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
-55 to 150
Typ
14
40
0.85
°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
Min
Typ
30
36
VDS=30V, VGS=0V
Max
V
1
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±16V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
280
TJ=55°C
5
VGS=10V, ID=20A
10
uA
2.4
V
1.9
2.3
2.8
3.4
3
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
2.4
gFS
Forward Transconductance
VDS=5V, ID=20A
130
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.67
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
1.85
RDS(ON)
TJ=125°C
Units
mΩ
mΩ
S
1
V
85
A
3450
4335
5210
pF
500
720
950
pF
260
435
610
pF
1
2
3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
55
71
86
nC
Qg(4.5V) Total Gate Charge
25
33
40
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
10
nC
Gate Drain Charge
16
nC
tD(on)
Turn-On DelayTime
10
ns
tr
Turn-On Rise Time
6.5
ns
tD(off)
Turn-Off DelayTime
75.5
ns
tf
trr
Turn-Off Fall Time
17.5
ns
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
29
35
13.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1.0: November 2013
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
VDS=5V
3.5V
100
4.5V
80
80
3V
10V
ID(A)
ID (A)
60
60
40
125°C
40
25°C
20
20
VGS=2.5V
0
0
0
1
2
3
4
1
5
5
2
2.5
3
3.5
4
Normalized On-Resistance
2.2
4
RDS(ON) (mΩ
Ω)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
VGS=4.5V
2
VGS=10V
1
2
VGS=10V
ID=20A
1.8
17
5
2
10
=4.5V
1.6
1.4
1.2
VGS
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
6
1.0E+02
ID=20A
1.0E+01
5
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
4
3
25°C
2
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1.0: November 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=15V
ID=20A
5000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
4000
3000
2000
Coss
1000
0
Crss
0
0
10
20
30
40
50
60
70
Qg (nC)
Figure 7: Gate-Charge Characteristics
80
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
200
1000.0
10µs
RDS(ON)
limited
10µs
10.0
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
160
TJ(Max)=150°C
TC=25°C
120
17
5
2
10
100µs
Power (W)
ID (Amps)
100.0
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1.0: November 2013
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
TA=125°C
10
1
60
40
20
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
150
10000
100
TA=25°C
80
1000
Power (W)
Current rating ID(A)
80
60
40
17
5
2
10
100
10
20
1
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.00001
150
0.001
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1.0: November 2013
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 1.0: November 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6