AOT7N70/AOTF7N70 700V, 7A N-Channel MOSFET General Description Product Summary The AOT7N70 & AOTF7N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 800V@150℃ 7A RDS(ON) (at VGS=10V) < 1.8Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT7N70L & AOTF7N70L Top View D TO-220F TO-220 G G D S G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT7N70 Drain-Source Voltage VDS 700 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C AOTF7N70 V 7 ID Units V 7* 4.2 4.2* A Pulsed Drain Current C IDM Avalanche Current C IAR 5 A Repetitive avalanche energy C EAR 187 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 375 5 mJ V/ns W 24 PD 38.5 0.3 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOT7N70 65 AOTF7N70 65 Units °C/W 0.5 0.63 -3.25 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev 1: July 2010 198 1.6 www.aosmd.com Page 1 of 6 AOT7N70/AOTF7N70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 700 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 800 V ID=250µA, VGS=0V 0.8 V/ oC VDS=700V, VGS=0V 1 VDS=560V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A gFS Forward Transconductance VDS=40V, ID=3.5A 6.7 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 ±100 3 µA 4 4.5 nΑ V 1.48 1.8 Ω 1 V S IS Maximum Body-Diode Continuous Current 7 A ISM Maximum Body-Diode Pulsed Current 24 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=560V, ID=7A 782 978 1175 pF 64 80 104 pF 5.5 7 10 pF 2 4 6 Ω 16 20.5 25 nC 4 5 6 nC 6.3 7.9 11.8 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=7A,dI/dt=100A/µs,VDS=100V 215 270 325 Qrr Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V 4.7 5.9 7.1 VGS=10V, VDS=350V, ID=7A, RG=25Ω 23 ns 50 ns 53 ns 38 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=30mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: July 2010 www.aosmd.com Page 2 of 6 AOT7N70/AOTF7N70 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12 100 10V VDS=40V -55°C 9 10 ID(A) ID (A) 6.5V 6 6V 125°C 1 3 25°C VGS=5.5V 0.1 0 0 5 10 15 20 25 2 30 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 3.0 Normalized On-Resistance 3 2.5 RDS(ON) (Ω ) 4 2.0 VGS=10V 1.5 2 4 6 8 10 12 VGS=10V ID=3.5A 2 1.5 1 0.5 0 -100 1.0 0 2.5 14 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.2 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 25°C 1.0E-02 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature Rev 1: July 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT7N70/AOTF7N70 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Capacitance (pF) VGS (Volts) Ciss VDS=560V ID=7A 12 9 6 1000 Coss 100 10 3 Crss 1 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 100 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 RDS(ON) limited 10µs 100µs 1 1ms DC 0.1 10µs 10 ID (Amps) 10 ID (Amps) 0.1 30 10ms RDS(ON) limited 100µs 1 1ms 10ms DC 0.1 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.1s 1s 0.01 0.01 1 10 100 VDS (Volts) 1000 10000 Figure 9: Maximum Forward Biased Safe Operating Area for AOT7N70 (Note F) 1 10 100 VDS (Volts) 1000 10000 Figure 10: Maximum Forward Biased Safe Operating Area for AOTF7N70 (Note F) Current rating ID(A) 8 6 4 2 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Rev 1: July 2010 www.aosmd.com Page 4 of 6 AOT7N70/AOTF7N70 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.63°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT7N70 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.25°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF7N70 (Note F) Rev 1: July 2010 www.aosmd.com Page 5 of 6 AOT7N70/AOTF7N70 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 1: July 2010 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6