AP01L60T
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
BVDSS
600V
RDS(ON)
12Ω
ID
G
160mA
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for all commercial-industrial
applications.
TO-92
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID@TA=25℃
Continuous Drain Current, V GS @ 10V
160
mA
ID@TA=100℃
Continuous Drain Current, V GS @ 10V
100
mA
300
mA
0.83
W
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
150
℃/W
1
200810225
AP01L60T
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
600
-
-
V
-
0.8
-
V/℃
VGS=10V, ID=0.5A
-
-
12
Ω
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=0.5A
-
0.8
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=150 C) VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=100mA
-
7
11
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
3.4
-
nC
2
td(on)
Turn-on Delay Time
VDD=300V
-
8
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
13
-
ns
tf
Fall Time
RD=300Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
260
420
pF
Coss
Output Capacitance
VDS=25V
-
20
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
3
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3
-
Ω
Min.
Typ.
IS=160mA, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=1A, VGS=0V,
-
345
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1
-
µC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP01L60T
1.5
1.00
10V
6.0V
5.5V
5.0V
ID , Drain Current (A)
T A =25 C
1.0
V G =4.0V
0.5
10V
5.0V
o
T A =150 C
ID , Drain Current (A)
o
0.75
4.5V
0.50
V G =4.0V
0.25
0.0
0.00
0
12
24
36
0
20
30
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
40
3.0
I D =0.5A
V G =10V
2.4
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
10
V DS , Drain-to-Source Voltage (V)
1
1.8
1.2
0.9
0.6
0.0
0.8
-50
0
50
100
-50
150
o
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
10
3.6
3.2
IS (A)
VGS(th) (V)
1
T j = 150 o C
T j = 25 o C
2.8
2.4
0.1
2
1.6
0.01
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP01L60T
I D = 100m A
V DS = 480 V
12
C iss
100
9
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
15
6
C oss
10
C rss
3
1
0
0
1
2
3
4
5
6
7
8
9
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
0.20
1.2
0.15
0.8
PD (W)
ID , Drain Current (A)
9
V DS , Drain-to-Source Voltage (V)
0.10
0.4
0.05
0.00
0
25
50
75
100
125
T A , Case Temperature (
o
150
25
50
100
125
150
o
C)
Fig 9. Maximum Drain Current v.s.
75
T A , Case Temperature( C)
Fig 10. Typical Power Dissipation
Case Temperature
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4