AP01N40G-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ 100% Avalanche Test
▼ Fast Switching Performance
BVDSS
400V
RDS(ON)
16Ω
ID
0.2A
G
▼ Simple Drive Requirement
S
D
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
S
SOT-89
D
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
400
V
+20
V
3
0.2
A
3
0.14
A
0.8
A
1.25
W
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Units
100
℃/W
1
201005191
AP01N40G-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
400
-
-
V
VGS=10V, ID=0.2A
-
-
16
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=0.2A
-
0.2
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=1A
-
2.9
4.6
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=320V
-
0.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
0.6
-
nC
2
td(on)
Turn-on Delay Time
VDD=200V
-
7.7
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
23
-
ns
tf
Fall Time
VGS=10V
-
73
-
ns
Ciss
Input Capacitance
VGS=0V
-
76
125
pF
Coss
Output Capacitance
VDS=25V
-
11
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Min.
Typ.
IS=0.8A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=1A, VGS=0V
-
260
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
460
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mount on FR4 board, t < 10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP01N40G-HF
0.6
1.2
10V
9.0V
8.0V
7.0V
V G = 6.0 V
ID , Drain Current (A)
0.8
0.6
0.4
10V
9.0V
8.0V
7.0V
T A =150 o C
0.5
ID , Drain Current (A)
o
T A =25 C
1
0.4
V G = 6.0 V
0.3
0.2
0.1
0.2
0
0
0
4
8
12
16
20
24
0
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
I D =0.2A
V G =10V
1
2
1
0.9
0.8
0
-50
0
50
100
-50
150
o
Fig 3. Normalized BVDSS v.s. Junction
50
100
150
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
4
2.4
3
2
T j = 150 o C
VGS(th) (V)
IS (A)
0
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
o
T j = 25 C
2
1.6
1.2
1
0
0.8
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP01N40G-HF
f=1.0MHz
160
I D =1A
V DS =320V
10
120
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
80
C iss
4
40
2
0
C oss
C rss
0
0
1
2
3
1
4
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1
100us
1ms
10ms
ID (A)
0.1
100ms
1s
0.01
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
Rthja=100 oC/W
0.001
0.001
0.1
1
10
100
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4