AP07N70CI-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated D ▼ Fast Switching ▼ Simple Drive Requirement BVDSS 700V RDS(ON) 1.4Ω ID G 7A S Description AP07N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. G D S TO-220CFM(I) The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage + 30 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 7 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 4.4 A 1 IDM Pulsed Drain Current 18 A PD@TC=25℃ Total Power Dissipation 37 W 0.3 W/℃ 140 mJ Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current 7 A EAR Repetitive Avalanche Energy 7 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data & specifications subject to change without notice 1 200903183 AP07N70CI-H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 700 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃ RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=3.5A - - 1.4 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=50V, ID=3.5A - 4.5 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=125 C) VDS=480V, VGS=0V - - 500 uA Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA ID=7A - 32 - nC VGS=0V, ID=1mA o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 8.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 9 - nC VDD=300V - 17 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=7A - 15 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 35 - ns tf Fall Time RD=43Ω - 18 - ns Ciss Input Capacitance VGS=0V - 2075 - pF Coss Output Capacitance VDS=25V - 120 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF Min. Typ. - - 7 A - - 18 A - - 1.5 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.5V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 3 Forward On Voltage 1 Tj=25℃, IS=7A, VGS=0V Max. Units Notes: 1.Pulse width limited by Maximum junction temperature. 2.Starting Tj=25oC , VDD=50V , L=5mH , RG=25Ω , IAS=7A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP07N70CI-H 9 12 10V 6.0V 5.5V 10V 6.0V 5.5V 5.0V o T C =150 C ID , Drain Current (A) ID , Drain Current (A) T C =25 o C 8 5.0V 4 6 3 V G =4.0V V G =4.0V 0 0 0 5 10 15 20 25 0 10 V DS , Drain-to-Source Voltage (V) 20 30 40 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 Normalized RDS(ON) Normalized BVDSS (V) I D =3.5A V G =10V 1.1 1.0 2 1 0.9 0 0.8 -50 0 50 100 -50 150 o 50 100 150 T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 6 10 4 T j = 150 o C VGS(th) (V) 100 IS (A) 0 o T j , Junction Temperature ( C) T j = 25 o C 2 1 0 0.1 0 0.2 0.4 0.6 0.8 1 V SD ,Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP07N70CI-H f=1.0MHz 16 10000 C iss 12 V DS =320V V DS =400V V DS =480V C (pF) VGS , Gate to Source Voltage (V) I D =7A 8 C oss 100 4 C rss 1 0 0 10 20 30 40 1 50 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) DUTY=0.5 10 ID(A) 100us 1ms 1 10ms 100ms 0.1 1s DC T c =25 ℃ Single Pulse 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4