AP4423GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Low On-resistance
D
D
▼ Fast Switching Characteristic
S
▼ RoHS Compliant & Halogen-Free
SO-8
S
G
BVDSS
-30V
RDS(ON)
15mΩ
ID
-11A
S
Description
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-30
V
+25
V
3
-11
A
3
-8.7
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-50
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient 3
50
℃/W
Data and specifications subject to change without notice
1
201106213
AP4423GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-10A
-
12
15
mΩ
VGS=-4.5V, ID=-6A
-
20
25
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
17
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+100
nA
ID=-10A
-
27
43
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
20
-
nC
VDS=-15V
-
15
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
40
-
ns
tf
Fall Time
VGS=-10V
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
1500 2400
pF
Coss
Output Capacitance
VDS=-25V
-
530
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
440
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.9
4.5
Ω
Min.
Typ.
IS=-2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
38
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4423GM-HF
200
140
-10V
-10V
T A = 25 o C
o
T A = 150 C
120
-7.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
160
-7.0V
120
-5.0V
80
-4.5V
100
80
-5.0V
-4.5V
60
40
V G = -3.0 V
40
20
V G = -3.0 V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
26
1.6
ID=-6A
T A =25 ℃
I D = - 10 A
V G =-10V
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
22
18
1.2
1.0
14
0.8
0.6
10
2
4
6
8
-50
10
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
10
8
-VGS(th) (V)
2
-IS(A)
6
o
T j =150 C
T j =25 o C
4
1
2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4423GM-HF
f=1.0MHz
10000
I D = - 10 A
V DS = - 24 V
8
C iss
6
C (pF)
-VGS , Gate to Source Voltage (V)
10
1000
4
C oss
C rss
2
0
100
0
10
20
30
40
1
50
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
1ms
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
DC
Rthja=125 oC/W
0.001
0.01
0.1
1
10
0.0001
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =-5V
-ID , Drain Current (A)
40
T j =25 o C
QG
T j =150 o C
-4.5V
30
QGS
QGD
20
10
Charge
Q
0
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4