AP9479GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge D D D ▼ Fast Switching Characteristic BVDSS 60V RDS(ON) 45mΩ ID 5.6A G ▼ RoHS Compliant SO-8 S S S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 60 V +25 V 3 5.6 A 3 4.5 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 30 A PD@TA=25℃ Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 ℃/W 1 200810202 AP9479GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 60 - - V - 0.06 - V/℃ VGS=10V, ID=5A - - 45 mΩ VGS=4.5V, ID=3A - - 60 mΩ BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=5V, ID=5A - 8 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=48V, VGS=0V - - 25 uA Gate-Source Leakage VGS=+25V - - +100 nA ID=5A - 11 18 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 2.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC VDS=30V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 4 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 24 - ns tf Fall Time RD=30Ω - 5 - ns Ciss Input Capacitance VGS=0V - 960 1540 pF Coss Output Capacitance VDS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 1.3 2 Ω Min. Typ. IS=2A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=5A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 31 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9479GM-HF 30 30 10V 7.0 V 5.0V 4.5V 20 10 V G =3.0V 20 V G =3.0V 10 0 0 0 2 4 0 6 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 55 1.8 ID=5A V G =10V ID=3A T A =25 ℃ Normalized RDS(ON) 50 RDS(ON) (mΩ) 10V 7.0V 5.0V 4.5V o T A = 150 C ID , Drain Current (A) ID , Drain Current (A) T A = 25 o C 45 1.4 1.0 40 0.6 35 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 Normalized VGS(th) (V) 6 IS(A) 4 T j =150 o C T j =25 o C 2 0 1.2 0.8 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9479GM-HF f=1.0MHz 15 10000 V DS = 30 V V DS = 38 V V DS = 48 V 9 1000 C iss 100 C oss C rss C (pF) VGS , Gate to Source Voltage (V) ID=5A 12 6 3 10 0 0 10 20 1 30 5 9 Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 Normalized Thermal Response (Rthja) 100 ID (A) 13 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 100us 1ms 1 10ms 100ms 0.1 T A =25 o C Single Pulse 1s Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 125℃/W DC 0.001 0.01 0.1 1 10 100 1000 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG ID , Drain Current (A) V DS =5V o T j =25 C QG T j =150 o C 20 4.5V QGS QGD 10 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4