AP4438CGM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
D
▼ Simple Drive Requirement
D
D
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
SO-8
S
S
BVDSS
30V
RDS(ON)
11.5mΩ
ID
11.8A
S
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
+20
V
3
11.8
A
3
9.4
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
40
A
PD@TA=25℃
Total Power Dissipation
2.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
201104121
AP4438CGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=11A
-
9
11.5
mΩ
VGS=4.5V, ID=7A
-
13.3
18
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.35
3
V
gfs
Forward Transconductance
VDS=10V, ID=11A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=11A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=15V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
9
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
21
-
ns
tf
Fall Time
VGS=10V
-
4.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
1100 1760
pF
Coss
Output Capacitance
VDS=15V
-
140
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2.6
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=2.1A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=11A, VGS=0V,
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4438CGM-HF
60
60
10 V
7.0 V
6.0 V
5.0 V
V G =4.0V
ID , Drain Current (A)
50
40
o
T A = 150 C
10 V
7.0 V
6.0 V
5.0 V
V G =4.0V
50
ID , Drain Current (A)
o
T A = 25 C
30
20
40
30
20
10
10
0
0
0
1
2
3
4
5
0
6
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
1.9
ID=7A
T A =25 ℃
I D = 11 A
V G =10V
Normalized RDS(ON)
RDS(ON) (mΩ)
14
12
1.4
0.9
10
0.4
8
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
12
I D =250uA
T j =150 o C
T j =25 o C
10
Normalized VGS(th) (V)
1.6
IS(A)
8
6
4
1.2
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4438CGM-HF
10
f=1.0MHz
1600
8
1200
C (pF)
VGS , Gate to Source Voltage (V)
I D = 11A
V DS =15V
6
C iss
800
4
400
2
0
C oss
C rss
0
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
ID (A)
10
100us
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=125 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V DS =5V
VG
ID , Drain Current (A)
40
QG
4.5V
30
QGS
QGD
20
10
T j =150 o C
T j =25 o C
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4