AP6901GSM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
S1/D2
S1/D2
S1/D2
G1
▼ Simple Drive Requirement
▼ DC-DC Converter Suitable
CH-1
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
S2/A
G2
D1
D1
SO-8
CH-2
Description
BVDSS
30V
RDS(ON)
16.5mΩ
ID
BVDSS
RDS(ON)
ID
7.1A
30V
16mΩ
9.2A
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
D1
G1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
N-Channel 1
MOSFET
S1/D2
Schottky Diode
G2
N-Channel 2
MOSFET
Absolute Maximum Ratings
Symbol
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Parameter
VDS
S2/A
Units
Channel-1
Channel-2
30
30
V
+20
+20
V
Continuous Drain Current
3
7.1
9.2
A
Continuous Drain Current
3
5.7
7.4
A
30
30
A
1.4
2.2
W
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a (CH-1)
Rthj-a (CH-2)
Parameter
Units
Value
Typ.
Max.
Thermal Resistance Junction-ambient
3
70
90
℃/W
Thermal Resistance Junction-ambient
3
42
55
℃/W
Data and specifications subject to change without notice
1
200911131
AP6901GSM-HF
o
CH-1 Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=7A
-
-
16.5
mΩ
VGS=4.5V, ID=5A
-
-
24
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=5A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=5A
-
3.7
6
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
5.5
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
14.5
-
ns
tf
Fall Time
RD=15Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
375
600
pF
Coss
Output Capacitance
VDS=25V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.5
5.3
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
2
AP6901GSM-HF
CH-2 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=7A
-
-
16
mΩ
VGS=4.5V, ID=5A
-
-
24
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=5A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=7A
-
3.7
6
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
5.5
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
14.5
-
ns
tf
Fall Time
RD=15Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
375
600
pF
Coss
Output Capacitance
VDS=25V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.5
5.3
Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
2
Min.
Typ.
IS=1.8A, VGS=0V
Test Conditions
-
-
Max. Units
1.2
V
trr
Reverse Recovery Time
Is=7A, VGS=0V,
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP6901GSM-HF
o
Schottky Specifications@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VF
Forward Voltage Drop
IF=1.0A
-
0.47
0.5
V
Irm
Maximum Reverse Leakage Current
Vr=24V
-
0.004
0.2
mA
Maximum Reverse Leakage Current
Vr=24V,Tj=75℃
-
0.5
1
mA
4
AP6901GSM-HF
Channel-1
40
40
30
ID , Drain Current (A)
ID , Drain Current (A)
o
TA=150 C
10V
7.0V
6.0V
5.0V
T A = 25 o C
V G = 4.0 V
20
10
30
20
10
0
0
0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
24
2.0
ID=5A
ID=7A
V G =10V
T A =25 o C
Normalized RDS(ON)
20
RDS(ON) (mΩ)
1 0V
7.0V
6.0V
5.0V
V G = 4.0V
16
1.6
1.2
0.8
12
0.4
8
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
Normalized VGS(th) (V)
8
IS(A)
6
T j =150 o C
4
T j =25 o C
2
1.3
1.0
0.7
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
5
AP6901GSM-HF
Channel-1
f=1.0MHz
600
500
8
ID=5A
V DS =15V
V DS =18V
V DS =24V
6
400
C (pF)
VGS , Gate to Source Voltage (V)
10
C iss
300
4
200
C oss
2
100
C rss
0
0
0
2
4
6
1
8
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
ID (A)
10
100us
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
Single Pulse
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
6
AP6901GSM-HF
Channel-2
40
40
o
10V
7.0V
6.0V
5.0V
V G =4.0V
30
20
30
20
10
10
0
0
0
1
2
0
3
V DS , Drain-to-Source Voltage (V)
1
2
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
24
2.0
ID=7A
ID=9A
V G =10V
Normalized RDS(ON)
T A =25 o C
20
RDS(ON) (mΩ)
10V
7.0V
6.0V
5.0V
V G = 4.0V
o
T A =150 C
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 C
16
12
1.6
1.2
0.8
0.4
8
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
8
1.2
Normalized Vth (V)
IS (A)
6
4
T j =150 o C
T j =25 o C
1.0
0.8
2
0.6
0
0.4
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
7
AP6901GSM-HF
Channel-2
f=1.0MHz
600
500
8
ID=7A
V DS =15V
V DS =18V
V DS =24V
6
400
C (pF)
VGS , Gate to Source Voltage (V)
10
C iss
300
4
200
C oss
2
100
C rss
0
0
0
2
4
6
1
8
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by RDS(ON)
ID (A)
10
Normalized Thermal Response (Rthja)
Duty factore=0.5
100us
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135℃/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
8
AP6901GSM-HF
Schottky
10
10
IF , Forward Current (A)
IR , Reverse Current (mA)
1
30V
0.1
24V
0.01
o
o
T j =150 C
T j =25 C
0.001
0.0001
1
0
25
50
75
100
125
T j , Junction Temperature ( o C)
Fig 1. Reverse Current vs Junction Temperature
0
0.3
0.6
0.9
1.2
1.5
V F , Forward Voltage Drop (V)
Fig 2. Typical Forward Characteristics
9