AP6902AGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1 (TAB1)
▼ Simple Drive Requirement
D2 (TAB2)
▼ Fast Switching Performance
▼ Halogen Free & RoHS Compliant
30V
RDS(ON)
9.2mΩ
ID
▼ Two Independent Device
S1
BVDSS
52A
G1
S2
G2
SDPAKTM
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost-effectiveness.
D2
D1
SDPAKTM used APEC innovated package and provides two
independent device that is suitable and optimum for DC/DC
power application.
G2
G1
S2
S1
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current
ID@TA=25℃
ID@TA=70℃
52
A
3
13.8
A
3
11
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
50
A
PD@TA=25℃
Total Power Dissipation
3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
3
℃/W
42
℃/W
1
201303041
AP6902AGH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=12A
-
-
9.2
mΩ
VGS=4.5V, ID=8A
-
-
13.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=12A
-
26
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=12A
-
15
24
nC
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
9
-
ns
tr
Rise Time
ID=12A
-
41
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
24
-
ns
tf
Fall Time
VGS=10V
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
800
1280
pF
Coss
Output Capacitance
VDS=25V
-
210
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
150
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.4
4.8
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=2.5A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
Is=10A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Rthja is determined with the device, mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6902AGH-HF
50
50
T A = 25 C
ID , Drain Current (A)
40
30
20
40
10
30
20
10
0
0
0
1
2
3
0
4
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
12
I D = 12 A
V G =10V
ID=8A
o
T A =25 C
Normalized RDS(ON)
11
RDS(ON) (mΩ)
10V
7.0V
6.0V
5.0V
V GS =4.0V
T A = 150 o C
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
V GS =4.0V
o
10
9
1.6
1.2
0.8
8
7
0.4
2
4
6
8
-50
10
V GS ,Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10
I D =250uA
1.6
Normalized VGS(th)
IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.2
0.8
0.4
2
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6902AGH-HF
10
f=1.0MHz
1600
I D = 12 A
V DS =24V
1200
C (pF)
VGS , Gate to Source Voltage (V)
8
6
800
C iss
4
400
2
C oss
C rss
0
0
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
10
ID (A)
100us
1ms
10ms
100ms
1
1s
0.1
DC
o
T A =25 C
Single Pulse
0.01
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja=75 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
16
60
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
50
40
30
T j =150 o C
20
T j =25 o C
12
8
4
10
T j = -40 o C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4