AP5322GM-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Fast Switching Characteristic G2 BVDSS 100V RDS(ON) 250mΩ ID 1.9A S2 ▼ Halogen Free & RoHS Compliant SO-8 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 100 V +20 V 3 1.9 A 3 1.5 A Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current 8 A PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 ℃/W 1 201201101 AP5322GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=1.9A - 190 250 mΩ VGS=4.5V, ID=1A - 300 500 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.6 3 V gfs Forward Transconductance VDS=10V, ID=1.9A - 2.4 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=1.9A - 3.1 5 nC Qgs Gate-Source Charge VDS=50V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 1.8 - nC td(on) Turn-on Delay Time VDS=50V - 5 - ns tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=3.3Ω - 12 - ns tf Fall Time VGS=10V - 3 - ns Ciss Input Capacitance VGS=0V - 200 320 pF Coss Output Capacitance VDS=15V - 32 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 25 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.5A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=1.9A, VGS=0V - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 40 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP5322GM-HF 10 6 o 5.0V 6 10V 7.0V 6.0V 5.0V 5 ID , Drain Current (A) 8 ID , Drain Current (A) T A = 150 o C 10V 7.0V 6.0V T A = 25 C 4 V G = 4.0V 4 3 V G = 4.0V 2 2 1 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 420 2.4 I D = 1.9 A V G =10V ID=1A T A =25 ℃ 380 Normalized RDS(ON) RDS(ON) (mΩ) 2.0 340 300 1.6 1.2 260 0.8 220 180 0.4 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 2 I D =250uA 1.6 Normalized VGS(th) (V) IS(A) 1.6 1.2 T j =150 o C 0.8 T j =25 o C 0.4 1.2 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP5322GM-HF 10 f=1.0MHz 400 VGS , Gate to Source Voltage (V) I D = 1.9 A V DS =50V 8 C (pF) 300 6 C iss 200 4 100 2 C oss C rss 0 0 0 1 2 3 4 1 5 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthja) Duty factor=0.5 10 ID (A) Operation in this area limited by RDS(ON) 100us 1 1ms 10ms 0.1 100ms 1s T A =25 o C Single Pulse 0.01 0.01 0.1 1 10 100 DC 0.2 0.1 PDM 0.1 t 0.05 T Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.02 Rthja = 135℃/W 0.01 Single Pulse 0.01 1000 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 2 VG 1.6 ID , Drain Current (A) QG 4.5V 1.2 QGS QGD 0.8 0.4 Charge Q 0 25 50 75 100 o 125 T A , Ambient Temperature ( C ) 150 Fig 11. Maximum Continuous Drain Current v.s. Ambient Temperature Fig 12. Gate Charge Waveform 4