AP2342GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Lower Gate Charge
S
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
SOT-223
BVDSS
60V
RDS(ON)
2Ω
ID
590mA
G
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, ultra low
on-resistance and cost-effectiveness.
G
S
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Continuous Drain Current, V GS @ 10V
3
Continuous Drain Current, V GS @ 10V
3
1
Rating
Units
60
V
+20
V
590
mA
470
mA
1.6
A
1.38
W
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
90
℃/W
1
201111251
AP2342GK-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
2
Min.
Typ.
60
-
-
V
VGS=10V, ID=500mA
-
-
2
Ω
VGS=4.5V, ID=200mA
-
-
3
Ω
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=500mA
-
0.6
-
S
VGS=0V, ID=250uA
2
Max. Units
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=500mA
-
1
1.6
nC
Qgs
Gate-Source Charge
VDS=30V
-
0.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.3
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
11
-
ns
tr
Rise Time
ID=500mA
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
55
-
ns
tf
Fall Time
VGS=10V
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
33
53
pF
Coss
Output Capacitance
VDS=25V
-
8
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
Test Conditions
IS=0.5A, VGS=0V
Max. Units
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board ; 180 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2342GK-HF
1.2
1.6
o
1.2
10V
7.0V
6 0V
5.0 V
V G = 4 .0V
T A =150 o C
10V
7.0V
6 .0V
5.0 V
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 C
V G = 4 .0V
0.8
0.8
0.4
0.4
0
0
0
2
4
6
8
10
0
V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
2
I D = 200m A
I D = 500m A
V G =10V
T A =25 o C
1.9
Normalized RDS(ON)
2
RDS(ON) (Ω)
1.8
1.7
1.6
1.2
1.6
20
0.8
1.5
0.4
1.4
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0.5
1.6
I D =250uA
Normalized VGS(th) (V)
IS (A)
0.4
0.3
T j =150 o C
0.2
T j =25 o C
1.2
0.8
0.4
0.1
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2342GK-HF
f=1.0MHz
50
I D =0.5A
V DS =30V
V DS =48V
8
40
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
30
4
20
2
10
C oss
C rss
0
0
0
0.4
0.8
1.2
1.6
2
1
2.4
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
ID (A)
Operation in this area
limited by RDS(ON)
Normalized Thermal Response (Rthja)
1
100us
1ms
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 180℃/W
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
0.8
0.8
ID , Drain Current (A)
ID , Drain Current (A)
V DS =5V
0.6
0.4
0.2
0.6
0.4
0.2
T j =150 o C
o
T j =25 C
o
T j =-40 C
0
0
1
2
3
0
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4