AP75N07GW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 75V RDS(ON) 11mΩ ID G 90A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-3P package is widely preferred for commercial-industrial surface mount applications and suited for higher voltage applications such as SMPS. D TO-3P S Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage 4 Rating Units 75 V +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 90 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 70 A IDM Pulsed Drain Current1 360 A PD@TC=25℃ Total Power Dissipation 250 W 2 W/℃ 450 mJ Linear Derating Factor 3 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ℃/W Data & specifications subject to change without notice 1 200902232 AP75N07GW o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA 2 Min. Typ. Max. Units 75 - - V - 0.08 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=40A - - 11 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=15V, ID=40A - 120 - S IDSS Drain-Source Leakage Current VDS=75V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125 C) VDS=60V, VGS=0V - - 250 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA o IGSS 2 Qg Total Gate Charge ID=40A - 83 130 nC Qgs Gate-Source Charge VDS=60V - 10 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 51 - nC 2 td(on) Turn-on Delay Time VDD=40V - 15 - ns tr Rise Time ID=30A - 73 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 340 - ns tf Fall Time RD=1.33Ω - 200 - ns Ciss Input Capacitance VGS=0V - 4270 6830 pF Coss Output Capacitance VDS=25V - 690 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 320 - pF Rg Gate Resistance f=1.0MHz - 1.8 2.7 Ω Min. Typ. Max. Units Source-Drain Diode Symbol Parameter 2 Test Conditions VSD Forward On Voltage Tj=25℃, IS=40A, VGS=0V - - 1.5 V trr Reverse Recovery Time IS=40A, VGS=0V - 90 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 235 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A. 4.Package limitation current is 90A . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP75N07GW 240 280 o 10V 7.0 V 5.0V 4.5V ID , Drain Current (A) 240 10V 7.0 V 5.0V 4.5V o T C = 150 C 200 ID , Drain Current (A) T C = 25 C 200 160 120 160 120 V G =3.0V 80 V G =3.0V 80 40 40 0 0 0 3 6 9 0 12 Fig 1. Typical Output Characteristics 6 9 12 Fig 2. Typical Output Characteristics 2.0 20 I D =20A I D =40A V G =10V Normalized RDS(ON) T C =25 o C RDS(ON) (mΩ) 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 16 1.6 1.2 12 0.8 0.4 8 2 4 6 8 -50 10 V GS Gate-to-Source Voltage (V) 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 13 15 12 RDS(ON) (mΩ) 20 IS(A) 50 o Fig 3. On-Resistance v.s. Gate Voltage T j =150 o C 0 T j , Junction Temperature ( C) T j =25 o C 10 5 V GS =4.5V 11 V GS =10V 10 0 9 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 0 20 40 60 80 I D , Drain Current (A) Fig 6. On-Resistance vs. Drain Current 3 AP75N07GW f=1.0MHz 14 10000 ID=40A C iss 10 V DS = 4 0 V V DS = 48 V V DS = 60 V 8 C (pF) VGS , Gate to Source Voltage (V) 12 1000 6 C oss 4 C rss 2 100 0 0 40 80 120 160 1 200 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (Rthjc) 1 100us ID (A) 100 1ms 10ms 10 100ms DC o T C =25 C Single Pulse DUTY=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C SINGLE PULSE 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 160 ID , Drain Current (A) V DS =5V o T j =150 o C T j =25 C VG 120 QG 4.5V QGS 80 QGD 40 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4