AP9974AGP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V ▼ Single Drive Requirement RDS(ON) 12mΩ ▼ Fast Switching Characteristic ID ▼ Low Gate Charge D 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220(P) S The TO-220 package is widely preferred for commercial-industrial applications and suited for low voltage applications. Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 68 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 43 A 1 IDM Pulsed Drain Current 272 A PD@TC=25℃ Total Power Dissipation 104 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 1 200906193 AP9974AGP Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 60 - - V VGS=10V, ID=45A - - 12 mΩ VGS=4.5V, ID=30A - - 15 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=30A - 55 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V - - 250 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=30A - 28 45 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 19 - nC VDS=30V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=30A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 42 - ns tf Fall Time RD=1Ω - 20 - ns Ciss Input Capacitance VGS=0V - 2055 3300 pF Coss Output Capacitance VDS=25V - 260 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 200 - pF Min. Typ. IS=45A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 35 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 43 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9974AGP 200 100 10V 7.0V T C =25 o C o 160 80 ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T C = 150 C 5.0V 120 4.5V 80 40 60 40 V G =3.0V 20 V G =3.0V 0 0 0 2 4 6 8 10 12 0 1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3 4 5 6 Fig 2. Typical Output Characteristics 16 2.0 I D = 30 A I D =45A V G =10V T C =25 o C 1.6 Normalized RDS(ON) 14 RDS(ON) (mΩ) 2 V DS , Drain-to-Source Voltage (V) 12 10 8 1.2 0.8 0.4 2 4 6 8 10 -50 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 40 1.2 IS(A) T j =150 o C Normalized VGS(th) (V) 30 T j =25 o C 20 1.0 0.8 10 0.6 0.4 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9974AGP f=1.0MHz 12 10000 V DS = 30 V V DS = 36 V V DS = 48 V 8 C iss C (pF) VGS , Gate to Source Voltage (V) I D = 30 A 10 6 1000 4 C oss C rss 2 100 0 0 10 20 30 40 50 1 60 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (R thjc) 1 ID (A) 100 100us 1ms 10 10ms 100ms DC o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 o V DS =5V T j =25 C VG o T j =150 C ID , Drain Current (A) 80 QG 4.5V 60 QGS QGD 40 20 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4