AP9972AGP
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Single Drive Requirement
▼ Fast Switching Performance
BVDSS
60V
RDS(ON)
16mΩ
ID
G
60A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-220 package is widely preferred for commercial-industrial
applications and suited for low voltage applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+25
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
60
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
38
A
1
IDM
Pulsed Drain Current
240
A
PD@TC=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.7
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
200906195
AP9972AGP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.06
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=30A
-
-
16
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
44
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+100
nA
ID=40A
-
49
80
nC
VGS=0V, ID=250uA
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
13
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
20
-
nC
VDS=30V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=40A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
27
-
ns
tf
Fall Time
RD=0.75Ω
-
57
-
ns
Ciss
Input Capacitance
VGS=0V
-
2410 3860
pF
Coss
Output Capacitance
VDS=25V
-
290
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
240
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
48
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
75
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9972AGP
200
100
10V
9.0V
80
8.0V
150
10V
9.0V
8.0V
7.0V
o
T C =150 C
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
7.0V
100
V G =6.0V
V G =6.0V
60
40
50
20
0
0
0
2
4
6
8
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
2.0
I D =30A
V G =10V
I D = 30 A
o
T C =25 C
Normalized RDS(ON)
RDS(ON) (mΩ)
18
16
14
1.6
1.2
0.8
12
0.4
10
5
6
7
8
9
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.5
Normalized VGS(th) (V)
1.3
30
IS(A)
T j =150 o C
T j =25 o C
20
1.1
0.9
10
0.7
0.5
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9972AGP
f=1.0MHz
14
10000
V DS = 32 V
V DS = 40 V
V DS = 48 V
10
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
I D = 40 A
12
6
1000
4
C oss
C rss
2
100
0
0
20
40
1
60
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
ID (A)
100
100us
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
1
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
ID , Drain Current (A)
V DS =5V
o
VG
o
T j =25 C
T j =150 C
QG
60
10V
QGS
40
QGD
20
Charge
Q
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4