AP85T10AGI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
100V
RDS(ON)
8mΩ
ID
G
50A
S
Description
Advanced
Power
MOSFETs
fromfrom
APEC
provide
the the
The Advanced
Power
MOSFETs
APEC
provide
designer
designer with
with the
the best
best combination
combination of
of fast
fast switching,
switching,
ruggedized
ruggedized device
device design,
design, low
low on-resistance
on-resistance and
and cost-effectiveness.
cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@Tc=25℃
Continuous Drain Current, V GS @ 10V
50
A
ID@Tc=100℃
Continuous Drain Current, V GS @ 10V
31.5
A
200
A
1
IDM
Pulsed Drain Current
PD@Tc=25℃
Total Power Dissipation
42
W
PD@TA=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201105181
AP85T10AGI-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=30A
-
-
8
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
75
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
138
220
nC
Qgs
Gate-Source Charge
VDS=80V
-
28
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
65
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
28
-
ns
tr
Rise Time
ID=30A
-
88
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
65
-
ns
tf
Fall Time
VGS=10V
-
74
-
ns
Ciss
Input Capacitance
VGS=0V
-
6900 11040
pF
Coss
Output Capacitance
VDS=25V
-
650
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
380
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
3.6
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
75
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
250
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP85T10AGI-HF
300
160
ID , Drain Current (A)
250
ID , Drain Current (A)
T C =150 o C
10V
9.0V
8.0V
7.0V
o
T C =25 C
200
V G = 6.0V
150
100
10V
9.0V
8.0V
7.0V
V G =6.0V
120
80
40
50
0
0
0
4
8
12
16
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
1.2
I D =30A
V G =10V
I D =1mA
Normalized RDS(ON)
Normalized BVDSS (V)
2.0
1.1
1
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
2.0
40
I D =250uA
1.6
IS(A)
o
T j =150 C
Normalized VGS(th) (V)
30
T j =25 o C
20
1.2
0.8
10
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP85T10AGI-HF
f=1.0MHz
12
10000
I D =30A
V DS =80V
10
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
8000
6
6000
4000
4
2000
2
C oss
C rss
0
0
0
40
80
120
1
160
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
Operation in this area
limited by RDS(ON)
ID (A)
100us
1ms
10
10ms
100ms
1s
DC
1
T C =25 o C
Single Pulse
0
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4