AP9960GD
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D2
▼ Low On-Resistance
D2
D1
▼ Fast Switching Speed
D1
▼ PDIP-8 Package
BVDSS
40V
RDS(ON)
25mΩ
ID
7A
G2
S2
PDIP-8
G1
S1
Description
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
40
V
± 20
V
Continuous Drain Current
3
7
A
Continuous Drain Current
3
5.6
A
20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200528031
AP9960GD
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.032
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=7A
-
-
25
mΩ
VGS=4.5V, ID=5A
-
-
40
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=10V, ID=7A
-
25
-
S
o
VDS=40V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=32V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=7A
-
14.7
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
7.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6.8
-
nC
VDS=20V
-
11.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6.3
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
28.2
-
ns
tf
Fall Time
RD=20Ω
-
12.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1725
-
pF
Coss
Output Capacitance
VDS=25V
-
235
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Min.
Typ.
VD=VG=0V , VS=1.3V
-
-
1.54
A
IS=2.3A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
Forward On Voltage
2
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.
Max. Units
AP9960GD
36
32
T A =150 o C
10V
6.0V
5.0V
4.5V
24
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
12
V GS =4.0V
10V
6.0V
5.0V
4.5V
24
V GS =4.0V
16
8
0
0
0
1
2
3
0
4
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
80
I D =7.0A
T A =25 ℃
I D =7.0A
V GS =10V
Normalized RDS(ON)
RDS(ON) (mΩ )
60
40
1.4
0.8
20
0
0.2
2
4
6
8
10
12
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
3.5
3
1
o
VGS(th) (V)
IS(A)
2.5
o
Tj=150 C
Tj=25 C
2
1.5
0.1
1
0.5
0.01
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature (
150
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP9960GD
f=1.0MHz
10000
12
V DS =12V
V DS =16V
V DS =20V
9
Ciss
1000
C (pF)
VGS , Gate to Source Voltage (V)
I D =7.0A
6
Coss
Crss
100
3
10
0
0
5
10
15
20
1
25
7
13
19
25
31
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.0
PDM
t
Single Pulse
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90℃
℃ /W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q