AP4407M
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Low On-resistance
D
D
▼ Fast Switching
G
S
SO-8
BVDSS
-30V
RDS(ON)
14mΩ
ID
-10.7A
S
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-30
V
± 25
V
3
-10.7
A
3
-8.6
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-50
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
50
℃/W
200728031
AP4407M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
RDS(ON)
-30
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.015
-
V/℃
Static Drain-Source On-Resistance2
VGS=-10V, ID=-10A
-
-
14
mΩ
VGS=-4.5V, ID=-5A
-
-
25
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=-10V, ID=-10A
-
13
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 25V
-
-
±100
nA
ID=-10A
-
28
45
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
Min. Typ. Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
5.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
19.8
-
nC
VDS=-15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=6.8Ω,VGS=-10V
-
97
-
ns
tf
Fall Time
RD=15Ω
-
72
-
ns
Ciss
Input Capacitance
VGS=0V
-
1960 3200
pF
Coss
Output Capacitance
VDS=-25V
-
590
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
465
-
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Min. Typ. Max. Units
VSD
Forward On Voltage
IS=-2.0A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
36
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
34
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on min. copper pad.
AP4407M
40
T A =25 o C
-10V
-5.0V
-4.5V
-4.0V
-ID , Drain Current (A)
36
T A =150 o C
36
30
24
18
V G =-3.0V
12
6
28
24
20
16
12
V G =-3.0V
8
4
0
0
0
1
2
0
3
1
1
2
2
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.80
25
I D =-10A
I D =-10A
V GS = -10V
1.60
Normalized RDS(ON)
T A =25 o C
20
RDS(ON) (mΩ )
-10V
-5.0V
-4.5V
-4.0V
32
-ID , Drain Current (A)
42
15
1.40
1.20
1.00
0.80
0.60
10
3
5
7
9
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
100.00
10.00
2
T j =25 o C
-VGS(th) (V)
-IS(A)
T j =150 o C
1.00
1
0.10
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
T j , Junction Temperature (
150
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP4407M
f=1.0MH
14
10000
I D = -10A
V DS = -24V
10
Ciss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
1000
Coss
Crss
4
2
100
0
0
2
4
6
8
10
12
14
16
1
18
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100us
10
1ms
10ms
-ID (A)
1
100ms
0.1
1s
10s
DC
T A =25 o C
Single Pulse
0.01
Normalized Thermal Response (Rthja)
100
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 125℃
℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q