BAIDUMICRO B5819W

BAIDU MICRO ELECTRONS CO., LTD.
SOD-123 Plastic-Encapsulate Diodes
SOD-123
B5817W-5819W
SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
MARKING: B5817W: SJ
B5818W:SK
B5819W: SL
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Symbol
B5817W
B5818W
B5819W
Unit
Non-Repetitive Peak Reverse Voltage
VRM
20
30
40
V
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
V
VR(RMS)
14
21
28
V
Parameter
RMS Reverse Voltage
Average Rectified Output Current
1
IO
A
Peak Forward Surge Current @t=8.3ms
IFSM
9
A
Repetitive Peak Forward Current
IFRM
1.5
A
Power Dissipation
Pd
500
mW
RθJA
250
℃/W
TJ
125
℃
TSTG
-55~+150
℃
Thermal Resistance Junction to
Ambient
Junction temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
IR= 1mA
Reverse breakdown voltage
Reverse voltage leakage current
IR
VR=20V
VR=30V
VR=40V
B5817W
Forward voltage
VF
B5818W
B5819W
Diode capacitance
B5817W
B5818W
B5819W
B5817W
B5818W
B5819W
V(BR)
CD
Min
Max
20
30
40
V
mA
1
IF=1A
0.45
IF=3A
0.75
IF=1A
0.55
IF=3A
0.875
IF=1A
0.6
IF=3A
0.9
VR=4V, f=1MHz
Unit
V
V
V
pF
120
1
BAIDU MICRO ELECTRONS CO., LTD.
SOD-123 Plastic-Encapsulate Diodes
B5817W-5819W
Forward
Characteristics
0.1
0.0
a
a
T
=2
5℃
T
REVERSE CURRENT IR
=1
00
℃
(A)
IF
FORWARD CURRENT
1
Reverse
10
(mA)
10
Characteristics
T a=100℃
1
0.1
Ta=25℃
0.01
1E-3
0.4
0.8
1.2
FORWARD VOLTAGE
1.6
VF
2.0
01
10
(V)
20
REVERSE VOLTAGE
30
VR
40
(V)
Power Derating Curve
Capacitance Characteristics
600
1000
PD
(mW)
f=1MHz
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Ta=25℃
100
10
0.1
500
400
300
200
100
0
1
REVERSE VOLTAGE
10
VR
(V)
20
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃)
2