BCDSEMI AT2041K6

Data Sheet
Higher Surge ITVS, 4 I/Os, CI/O-VSS<1.5pF, with VCC
General Description
Features
BCD ITVS (Integrated Transient Voltage Suppression)
devices are designed and built using a BCD
proprietary process based on BCD standard
technology. These devices integrate the various diodes,
transistors and resistors required to build these ITVS
products. These diodes and transistors feature low
parasitic resistance and the diodes also exhibit low
capacitance. Using these devices, BCD is able to
design voltage clamping products where low
capacitance associated with low dynamic resistance is
required.
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The BCD AT2041 is a general purpose, high
performance and low cost device exhibiting higher
surge capability, suitable for protecting high speed
data interfaces. The AT2041 is a unique design
integrating low capacitance steering diodes, a blocking
diode and a clamping cell, specially created to protect
sensitive components connected to data and
transmission lines.
AT2041
Low Clamping Voltage:
Typical 8V at 10A 100ns, TLP, VCC to VSS
Typical 9V at 10A 100ns, TLP, I/O to VSS
11.2V at 12A 8μs/20μs, VCC to VSS
11V at 10A 8μs/20μs, I/O to VSS
IEC 61000-4-2: ±30kV (VCC to VSS, Air)
±30kV (VCC to VSS, Contact)
IEC 61000-4-2: ±30kV (I/O to VSS, Air)
±30kV (I/O to VSS, Contact)
IEC 61000-4-5: ±12A (VCC to VSS)
IEC 61000-4-5: ±10A (I/O to VSS)
Input Capacitance from I/O to VSS: 1.0pF
TLP Dynamic Resistance, I/O to VSS: 0.25Ω
Monolithic Silicon Technology
Application
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The AT2041 is available in SOT-23-6 package. This
package allows simple and optimal placement in
existing high-speed PCB layout.
VGA
USB 2.0 Power/Data Lines Protection
IEEE 1394
Laptop and Personal Computers
Flat Panel Displays
Video Graphics Cards
SIM Ports
SOT-23-6
Figure 1. Package Type of AT2041
Aug. 2012
Rev. 1.1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
Higher Surge ITVS, 4 I/Os, CI/O-VSS<1.5pF, with VCC
AT2041
Pin Configuration
K6 Package
(SOT-23-6)
Pin 1 Mark
1
6
2
5
3
4
Figure 2. Pin Configuration of AT2041 (Top View)
Circuit Diagram
D1
D1
I/ O 1
D1
I/ O 2
D3
D1
I/ O 3
I/ O 4
VCC
D2
D2
D2
D2
D4
VSS
Figure 3. Circuit Diagram of AT2041
Aug. 2012
Rev. 1.1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
Higher Surge ITVS, 4 I/Os, CI/O-VSS<1.5pF, with VCC
AT2041
Ordering Information
AT2041
-
Circuit Type
G1: Green
Package
K6: SOT-23-6
TR: Tape & Reel
5.0: Fixed Output 5.0V
Package
Temperature
Range
SOT-23-6
-55 to 85°C
Part Number
AT2041K6-5.0TRG1
Marking ID
GJP
Packing Type
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Peak Pulse Current (tp 8μs/20μs), VCC to VSS
IPP(VCC-VSS)
±12
A
Peak Pulse Current (tp 8μs/20μs) , I/O to VSS
IPP(I/O-VSS)
±10
A
5.5
±30
V
Operating Voltage (DC)
IEC61000-4-2 ESD (Air)
IEC61000-4-2 ESD (Contact)
VCC to VSS
I/O to VSS, VCC
Floating
VCC to VSS
I/O to VSS, VCC
Floating
±30
kV
±30
±30
VCC to VSS
IEC61000-4-5 (Lightning)
I/O to VSS
Lead Temperature (Soldering, 10sec)
TLEAD
kV
12
A
132
W
10
A
120
W
260
ºC
Operating Temperature
-55 to 85
ºC
Storage Temperature
-55 to 150
ºC
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Aug. 2012
Rev. 1.1
BCD Semiconductor Manufacturing Limited
3
Data Sheet
Higher Surge ITVS, 4 I/Os, CI/O-VSS<1.5pF, with VCC
AT2041
Electrical Characteristics
TA=25ºC, unless otherwise specified.
Parameter
Symbol
Working Voltage, VCC to VSS
Channel Leakage Current
Min
Typ
Max
Unit
5.0
1
V
μA
2
μA
-0.7
IR-CH
Reverse Leakage Current
VCC=5V, VSS=0V
VCC=5V,
Pin 5 to Pin 2
IBV=1mA
IR
Reverse Breakdown Voltage, VCC to VSS
Holding Voltage
Clamping Voltage (Lightning) VCC to VSS
(IEC61000-4-5)
I/O to VSS
VCC to VSS
Trigger Voltage
I/O to VSS
VCC to VSS
ESD Clamping Voltage
I/O to VSS
Differential
Clamping VCC to VSS
Resistance
I/O to VSS
Channel Input Capacitance
Conditions
VBR
VH
5.5
5.5
At 12A
At 10A
11.2
11
9
9
8
9
0.15
VTRIG
At 10A, TLP, 100ns
RDIFF-F
I/O to VSS
V
V
V
V
V
V
V
V
9.5
9.5
Ω
Ω
0.25
VI/O=2.5V, VCC=5V,
VSS=0V, f=1MHz
CI/O
1
1.5
pF
Typical Performance Characteristics
10.0
10
9.5
9
Current from VCC to VSS (A)
Current from I/O to VSS (A)
BV, Trigger Voltage, Holding Voltage (V)
TA=25°C, unless otherwise specified.
9.0
BV
VTRIG
VH
8.5
8.0
7.5
7.0
6.5
8
6
5
4
3
6.0
2
5.5
1
5.0
-60
0
-40
-20
0
20
40
60
80
100
120
0
140
1
2
3
4
5
6
7
8
9
10
Voltage from VCC to VSS (V)
Voltage from I/O to VSS (V)
o
Temperature ( C)
Figure 4. BV, Trigger Voltage, Holding Voltage
vs. Temperature
Aug. 2012
VCC to VSS
I/O to VSS
7
Figure 5. Current vs. Voltage
Rev. 1.1
BCD Semiconductor Manufacturing Limited
4
Data Sheet
Higher Surge ITVS, 4 I/Os, CI/O-VSS<1.5pF, with VCC
AT2041
Typical Performance Characteristics (Continued)
TA=25°C, unless otherwise specified.
2.0
12
1.8
Input Capacitance (pF)
Clamping Voltage (V)
11
IEC 61000-4-5 (Lightning)
10
9
8
o
f=1MHz, TA=25 C
VCC=4.8V, VSS=0V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
7
0.2
0.0
0.0
6
1
2
3
4
5
6
7
8
9
10
11
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
4.8
Input Voltage (V)
Current from I/O to VSS (A)
Figure 6. Clamping Voltage
vs. Current from I/O to VSS (8μs/20μs)
Figure 7. Input Capacitance vs. Input Voltage
VCLAMPING=11.2V
2V/div
Current
Waveform,
(Surge, 8x20 μs,
IPP=10.2A)
2A/div
Time
10μs/div
Figure 8. Waveform of I/O to VSS (Positive)
Aug. 2012
Rev. 1.1
BCD Semiconductor Manufacturing Limited
5
Data Sheet
Higher Surge ITVS, 4 I/Os, CI/O-VSS<1.5pF, with VCC
AT2041
Mechanical Dimensions
SOT-23-6
Unit:
0°
2.820(0.111)
8°
3.020(0.119)
0.200(0.008)
0.300(0.012)
0.400(0.016)
6
mm(inch) M I N
mm(inch) MAX
5
4
2
3
0.300(0.012)
0.600(0.024)
Pin 1 Mark
1
0.700(0.028)REF
0.950(0.037)TYP
0.000(0.000)
0.150(0.006)
1.800(0.071)
2.000(0.079)
0.100(0.004)
0.200(0.008)
0.900(0.035) 1.450(0.057)
MAX
1.300(0.051)
Aug. 2012
Rev. 1.1
BCD Semiconductor Manufacturing Limited
6
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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