BELLING BL7432SM

BL7432SM Low voltage Intelligent 2K bits
EEPROM
Description
BL7432SM is an IC for Chip Card made by
0.35um CMOS EERPOM process. It has 256
bytes EEPROM with write protect function .It
can be operated at low voltage. With its contact
configuration in accordance to ISO standard
7816.BL7432SM can be widely used in different
types of IC memory cards.
Figure 1
Features
•
•
•
•
•
•
•
•
•
•
•
256 x 8 bit EEPROM organization
Byte-wise addressing
Irreversible byte-wise write protection of lowest 32 addresses (Byte 0 ……31)
32 x1 bit organization of protection memory
Two-wire link protocol
End of processing indicated at data output
Answer-to-Reset according to ISO standard 7816-3
Programming time 2.5 ms per byte for both erasing and writing
Minimum of 100,000 write/erase cycles
Data retention time :>10 years
Contacts configuration and serial interface according to ISO 7816 standard (synchronous
transmission)
Pin Description
Pin No.
1
2
3
4
5
6
7
8
Parameter
C1
C2
C3
C4
C5
C6
C7
C8
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Symbol
Vdd
RST
CLK
N.C.
GND
NC
I/O
NC
-1Total 8 Pages
Function Description
Supply Voltage
Reset signal
Clock input
Not connected
Ground
Not connected
Bidirectional data line (open drain)
Not connected
5/18/2010
Wrote by ICCD
BL7432SM Low voltage Intelligent 2K bits
EEPROM
Function Description
Block Diagram
M a in
m e m o ry
P ro te c tio n
m e m o ry
255
31
EEPROM
256X8
32
31
Area for
perma nent
da ta stora ge
0
0
D a ta
A d d res s
D a ta
A d d ress
8
5
M e m o ry
M ain /P rotection
S ecu rity
H V G e n e ra to r
D e co d e r
C u rre n t
C olu m n
S a m p lin g
G e n e ra to r
R eset
B lock Logi c
A d d . D a ta
R e g is te r , C o m p a ra to r
S e q ue nc e r
A nd
S e c urity
P ro g ra m
C o n tro l
In terfac e
L o g ic
VCC
I/O R S T C L K
GND
Figure 2
The BL7432SM consists of 256 x 8 bit EEPROM main memory (figure 2) and a 32-bit
protection-memory with PROM functionality .The main memory is erased and written byte by
byte. When erased, all 8 bits of a data byte are set to logical one. When written, the information in
the individual EEPROM cells is to the input data, altered bit by bit to logical zeros (logical AND
between the old and the new data in the EEPROM).
Normally a data change consists of an erase and write procedure. It depends on the
contents of the data byte in the main memory and the new data byte whether the EEPROM is
really erased and/or written. If none of the 8 bits in the addressed byte requires a zero-to-one
transition the erase access will be suppressed. Vice versa the write access will be suppressed if
no one-to-zero transition is necessary. The write and the erase operation takes at least 2.5 ms
each. The first 32 bytes can be irreversibly protected against data change by writing the
corresponding bit in the protection memory. Each data byte in this address range is assigned to
one bit of the protection memory and has the same address as the data byte in the main memory
which it is assigned to. Once written the protection bit cannot be erased.
Transmission Protocol
The transmission protocol is a two wire link protocol between the interface device IFD and
the integrated circuit IC. It is identical to the protocol type “S=10”. All data changes on I/O are
initiated by the falling edge on CLK.
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Wrote by ICCD
BL7432SM Low voltage Intelligent 2K bits
EEPROM
The transmission protocol consists of the 4 modes:
1) Reset and Answer-to-Reset
2) Command Mode
3) Outgoing Data Mode
4) Processing Mode
(1) Reset and Answer-to-Reset
Answer-to-Reset takes place according to ISO standard 7816-3. The reset can be given at
any time during operation. In the beginning, the address counter id set to zero together with a
clock pulse and the first data bit (LSB) is output to I/O when RST is set from state H to state L.
Under a continuous input of additional 31 clock pulses the contents of the first 4 EEPROM
rd
addresses can be read out. The 33 clock pulse switches I/O to state H (figure 3). During
Answer-to-Reset any start and stop condition is ignored.
VCC
RST
1
2
3
4
1
2
3
...
31
32
30
31
CLK
...
32
I/O
RST
td4
tH
td4
tL
CLK
td2
td5
I/O
Figure 3 Reset and Answer-to-Reset
(2) Command Mode
After the Answer-to-Reset the chip waits for a command. Every command begins with a start condition,
includes a 3 bytes long command entry followed by an additional clock pulse and ends with a stop condition
(figure 4).
--Start condition: Falling edge on I/O during CLK in state H
--Stop condition: Rising edge on I/O during CLK in state H
IFD sets I/O to State L
Command
1
2
3
4
23
24
CLK
I/O
START
From IFD
tL
tF
CLK
td7
STOP
From IFD
tR
td5
td1
td8
td3
tBUF
I/O
Figure 4 Command Mode
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Wrote by ICCD
BL7432SM Low voltage Intelligent 2K bits
EEPROM
After the reception of a command there are two possible modes:
--Outgoing data mode for reading
--Processing mode for writing and erasing
(3) Outgoing Data Mode
In this mode the IC sends data to the IFD. Figure 5 shows the timing diagram. The first bit becomes
valid on I/O after the first falling edge on CLK. After the last data bit an additional clock pulse is necessary in
order to set I/O to state H and to prepare the IC for a new command entry. During this mode any start and
stop condition is discarded.
IC sets I/O to State H
Command
CLK
1
2
3
1
I/O
4
2
n-1
3
n
n-1
n
Start of Outgoing Data
Figure 5 Outgoing Data Mode
(4) Processing Mode
In this mode the IC processes internally. Figure 6 shows the timing diagram. The IC has to be clocked
continuously until I/O which was switched to state L after the first falling edge of CLK is set to state H. Any
start and stop condition id discarded during this mode.
CLK
1
2
3
n-1
n
I/O
Start of
Processing
td2
td2
End of
Processing
Figure 6 Processing Mode
Commands
(1) Command Format
Each command consists of three byte:
MSB Control
LSB
B7 B6 B5 B4 B3 B2 B1 B0
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MSB Address
LSB
A7 A6 A5 A4 A3 A2 A1 A0
-4Total 8 Pages
MSB Data
LSB
D7 D6 D5 D4 D3 D2 D1 D0
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Wrote by ICCD
BL7432SM Low voltage Intelligent 2K bits
EEPROM
Beginning with the control byte LSB is transmitted first.
B7 B6 B5 B4 B3 B2 B1 B0
Byte 2
Address
A7~A0
Byte 3
Data
D7~D0
0
0
1
1
0
0
0
0
Address
No effect
0
0
1
1
1
0
0
0
Address
Input data
0
0
1
1
0
1
0
0
No effect
No effect
0
0
1
1
1
1
0
0
Address
Input data
Byte 1 Control
Operation
Read Main
Memory
Update
Main Memory
Read Protection
Memory
Write Procection
Memory
Mode
Outgoing data
Processing
Outgoing Data
Processing
(2) Description of Command
Read Main Memory
The command reads out the contents of the main memory(with LSB first)starting at the given byte
address(N) UP TO THE END MEMORY. After the command entry the IFD has to supply sufficient
clock pulses. The number of clocks is m=(256-N)*8+1.The read access to the main memory is
always possible.
Read Protection Memory
The command transfers the protection bits under a continuous input of 32 clock pulses to the
output. I/O is switched to state H by an additional pulse. The protection memory can always be
read.
Update Main Memory
The command programs the address EEPROM byte with the data byte transmitted. Depending
on the old and new data, one of the following sequences will take place during the processing
mode:
-- erase and write
(5.0ms) corresponding to m = 255 clock pulses
-- write without erase
(2.5ms) corresponding to m = 124 clock pulses
-- erase without write
(2.5ms) corresponding to m = 124 clock pulses
(all values at 50 kHZ clock rate)
Command Entry
CLK
I/O
1
2
3
1
2
Processing
1
24
2
3
m-2 m-1
m
24
RST
Figure 7 Update Main Memory
Write Protection Memory
The execution of this command contains a comparison of the entered data byte with the assigned
byte in the EEPROM .In case of identity the protection bit is written thus making the data
information unchangeable. If the data comparison results in data differences writing of the
protection bit will be suppressed. Execution times and required clock pulses see Update Main
Memory.
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BL7432SM Low voltage Intelligent 2K bits
EEPROM
Reset Modes
(1) Power-on-Reset
After connecting the operating voltage to VCC ,I/O is state H. By all means, a read access to an
address or an Answer-to-Reset must be carried out before data can be altered.
(2) Break
If RST is set to high during CLK in state L any operation is aborted and I/O is switched to state H.
Minimum duration of Tres=5us is necessary to trigger a defined valid reset(figure 9).After Break
the chip is ready for further operations.
RST
tRCS
td9
CLK
I/O
Figure 9 Break
Failures
Behavior in case of failures:
In case of one of the following failures, the chip sets the I/O to state H after 8 clock pulses at the
latest.
Possible failures:
--Comparison unsuccessful
--Wrong command
--Wrong number of command clock pulses
--Write/erase access to already protected bytes
--Rewriting and erasing of a bit in the protection memory
Coding of the Chip
Due to security purposes every chip is irreversibly coded by a scheme. By this way fraud and
misuse is excluded. As an example, figures 10 and 11 show ATR and Directory Data of structure
1.When delivered, ATR header, ICM and ICT are programmed. Depending on the agreement
between the customer and Shanghai Belling CO. LTD. ICCF, the chip type and other content can
be also programmed before delivery.
ATR data
ATR header
H1
H2
H3
H4
TM
LM
ICM
ICT
DIR data
ICCF
ICCSN
TT
LT
TA
LA
Application
AID
TD
LD
FILE
AP
LD
LA
LM
LT
AID:Application identifier
ICCF:IC card fabricator identifier
LM:Length of manufacturer data
AP:Application personalizer identifier
ICCSN:IC card serial number
LT:Length of application template
ATR:Answer-to-Reset
ICM:IC manufacturer identifier
TA:Tag of AID
DIR:Directory
H1,H2:ATR protocol bytes
ICT:IC type
LA:Length of AID
TD:Tag of discretionary data
TM:Tag of manufacturer data
H3,H4:ATR historical bttes
LD:Length of application template
TT:Tag of application data
Figure 10 Synchronous Transmission ATR and Directory Data of Structure1
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-6Total 8 Pages
5/18/2010
Wrote by ICCD
BL7432SM Low voltage Intelligent 2K bits
EEPROM
Protocol bytes according to ISO 7816-3
Protocol type H1
Protocol parameter H2
Historical bytes acoording to ISO 7816-4
Category indicator H3
DIR data reference H4
b8 b7 b6 b5 b4 b3 b2 b1 b8 b7 b6 b5 b4 b3 b2 b1 b8 b7 b6 b5 b4 b3 b2 b1 b8 b7 b6 b5 b4 b3 b2 b1
1 0 1 0 0 0 1 0 0 0 0 1 0 0 1 1 0 0 0 1 0 0 0 0 1 0 0 1 0 0 0 1
Protocol type RFU
Structure
indentifier
Number Length of
of data data units x
units
in bits (2 x )
Category
indicator
according to ISO
7816-4
00= defined by ISO
10=structure 1
01=structure 2
11=structure 3
not defined
by ISO
b7-b1= reference of
DIR data
b8=0
b7-b1= Outside the scope
RFU
0-7 =defined by ISO
8-E = notdel. by ISO
8= serial data access
protocol
9=3 wire bus protocol
A=2 wire bus protocol
F=RFU
b8=1
of 7816-4
000= no indication
001=128
010=256
011=512
100=1024
101=2048
110=4096
111=RFU
0:
Read to end
1:
1:
Read with defined length
0:
DIR data reference
specified
DIR data reference
not specified
Figure 11 Answer-to-Reset for Synchronous Transmission Coding of Structure
Chip and Package
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BL7432SM Low voltage Intelligent 2K bits
EEPROM
Electrical Parameter
•
Absolute Maximum Ratings
Parameter
Symbol
Supply voltage
Input voltage (any pin)
Storage temperature
Power comsumption
Operation temperature
•
VCC
VI
TS
PT
Unit
Max
6.0
6.0
125
70
70
Test Condition
V
V
℃
mw
℃
DC Characteristics
min.
3.0
Limit Values
typ.
5.0
3
Max
5.5
10
VIH
VCC -1
-
VCC +0.3
V
VIL
VGND-0.2
-
VGND
+0.8
V
IH
-
-
50
µA
IOL
1
-
-
mA
VOL =0.4V,open
drain
IOH
-
-
50
A
VOH = VCC,open
drain
CI
-
-
10
pF
Parameter
Symbol
Supply voltage
Supply current
High-level input voltage
(I/O,CLK,RST)
Low-level input voltage
(I/O,CLK,RST)
High-level input current
(I/O,CLK,RST)
Low-level output current
(I/O)
High-level
leakage
current
(I/O)
Input capacitance
VCC
ICC
•
Limit Values
typ.
min.
-0.3
-0.3
-40
-35
Unit
Test Condition
V
mA
AC Characteristics
Parameter
Clock frequency
Clock high period
Clock low period
Rise time
Fall time
Hold time start condition
Delay time
Setup time for stop condition
Setup time
Hold time data
Answer to reset
Setup time data
Setup time for start condition
Reset
Delay time
Eraser time
Write time
Time before new start condition
Symbol
CLK
tH
tL
tR
tF
td1
td2
td3
td4
td5
td6
td7
td78
tRES
tdg
TER
tWR
TBUF
min.
7
9
9
Limit Values
typ.
Max
50
1
1
4
2.5
4
4
1
20
1
4
5
2.5
2.5*
2.5*
10
Unit
Test Condition

µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
ms
ms
µs
*f =50 kHz
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