SM4001PL THRU SM4007PL SUR FACE MOUNT GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts FEATURES SOD-123FL Glass passivated device Ideal for surface mouted applications Low reverse leakage Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension 1.8± 0.1 １．０±0.2 Cathode Band Top View 0.10-0.30 2.8±0.1 1.3± 0.15 Forward Current - 1.0 Ampere 0.6±0.25 MECHANICAL DATA Case: JEDEC SOD-123FL molded plastic body over passivated chip Terminals: Solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0007 ounce, 0.02 grams 3.7±0.2 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS MDD Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TA=65 C (NOTE 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) TL=25 C Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range VRRM VRMS VDC 4001 4002 4003 4004 4005 4006 4007 A1 A2 A3 A4 A5 A6 A7 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS VOLTS VOLTS VOLTS I(AV) 1.0 Amp IFSM 25.0 Amps VF 1.1 Volts IR 10.0 50.0 µA CJ RθJA TJ,TSTG 4 180 -55 to +150 pF K/W C Note: 1.Averaged over any 20ms period. 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted MDD ELECTRONIC RATINGS AND CHARACTERISTIC CURVES SM4001PL THRU SM4007PL FIG.2 -- TYPICAL JUNCTION CAPACITANCE 10 TJ = 150°C TJ = 25°C m AMPERES 9 CAPACITANCE, pF 1000 TJ = 100°C 8 7 6 5 4 3 2 1 100 600 700 800 900 1000 0 1100 0 INSTANTANEOUS FORWARD VOLTAGE,mV TJ = 150°C 10 TJ = 125°C TJ = 100°C 1 TJ = 75°C TJ = 50°C 0.1 TJ = 25°C 0.01 0 100 200 300 400 500 600 700 800 900 10 15 20 25 30 35 40 FIG.4 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT, AMPERES 100 5 REVERSE VOLTAGE,VOLTS FIG.3 -- TYPICAL INSTANTANEOUS REVERSE CHARACTERISTICS µ AMPERES INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT FIG.1 --TYPICAL FORWARD CHARACTERISTIC 1.2 Resistive or Inductive Load 1.0 0.8 0.6 0.4 0.2 3.0 x 3.0mm 40 µm Thick Copper Pad Areas 0 0 INSTANTANEOUS REVERSE VOLTAGE,V MDD ELECTRONIC 20 40 60 80 100 120 140 AMBIENT TEMPERATURE, 160